IP Library Granted Patent US 7,456,488
Granted Patent B2
US 7,456,488 · App. 10/301,109 · Granted Nov 25, 2008

Porogen material

Assignee: Advanced Technology Materials, Inc.
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Quick Facts
Patent No.
US 7,456,488
App. No.
10/301,109
Granted
Nov 25, 2008
Kind
B2
Abstract

A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film as well as semiconductor devices employing circuit features isolated by the porous film are also present.

Claims (22)

1. A porogen material comprising:

a silicon containing porogen and

a silicon based dielectric precursor,

wherein said silicon containing porogen and said silicon based dielectric precursor are chemically bonded to one another.

2. The porogen material of claim 1 wherein the silicon containing porogen is a carboxylate including a side chain selected from a group consisting of an alkyl, a fluoroalkyl, a perfluoroalkyl, a cycloalkyl, an aryl, a fluoroaryl, a vinyl, and an allyl.

3. The porogen material of claim 1 wherein the silicon based dielectric precursor is a cyclic siloxane selected from the group consisting of tetramethylcyclotetrasiloxane, hexamethyl cyclotetrasiloxane, and octamethylcyclotetrasiloxane.

4. The porogen material of claim 1 wherein the silicon containing porogen includes a thermally cleavable organic group.

5. The porogen material of claim 4 wherein the thermally cleavable organic group is one of a tertiary butyl group and tertiary amyl group and the porogen material has been transformed into a porous film by thermal cleavage and removal of the thermally cleavable organic group therefrom.

6. The porogen material of claim 1 wherein the silicon based dielectric precursor is a cyclic siloxane.

7. The porogen material of claim 1 which has been formed by chemical vapor deposition of the porogen and the dielectric precursor.

8. A porogen material comprising:

a silicon containing porogen and

a cyclic siloxane precursor.

9. The porogen material of claim 8 wherein the silicon containing porogen is a carboxylate including a side chain selected from a group consisting of an alkyl, a fluoroalkyl, a perfluoroalkyl, a cycloalkyl, an aryl, a fluoroaryl, a vinyl, and an allyl.

10. The porogen material of claim 8 wherein the cyclic siloxane is selected from the group consisting of tetramethylcyclotetrasiloxane, hexamethyl cyclotetrasiloxane, and octamethylcyclotetrasiloxane.

11. A porogen material comprising:

(a) a cyclic siloxane selected from the group consisting of tetramethylcyclotetrasiloxane, hexamethyl cyclotetrasiloxane, and octamethylcyclotetrasiloxane; and

(b) a silicon containing porogen chemically bonded to the cyclic siloxane,

wherein said silicon containing porogen includes a thermally cleavable organic group adapted to form a pore in the material when thermally cleaved, and

wherein said silicon containing porogen is selected from among:

(i) silicon carboxylate compounds comprising a side chain selected from among alkyl, fluoroalkyl, perifluoroalkyl, cycloalkyl, aryl, fluoroaryl, vinyl, and allyl; and

(ii) silicon compounds including a tertiary alkyl side chain selected from among t-butyl and amyl.

Assignments (9)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Recorded Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →
SECURITY INTEREST Recorded Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0032 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0151 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2015
From: ADVANCED TECHNOLOGY MATERIALS, INC.
To: ENTEGRIS, INC.
Reel/Frame 034894/0025 →
SECURITY INTEREST Recorded May 2, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032812/0192 →
SECURITY INTEREST Recorded May 1, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032815/0852 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2003
From: XU, CHONGYING; BOROVIK, ALEXANDER S.; BAUM, THOMAS H.
To: ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 013667/0478 →
Continuity (1)
Related Publication 20040102006A1 · May 27, 2004