Method and system for defining a redundancy window around a particular column in a memory array
View Patent ↗A method for a memory redundancy, including a memory array typically having a plurality of columns (e.g., bit lines) of memory cells, and identifying a particular (e.g., defective) column of the memory array and further defining a redundancy window by selecting a group of adjacent columns including the defective column. The number of columns in the group of selected columns may be equal to the number of columns in a redundancy array that is coupled to the memory array. The redundancy array is used for storing information that would have been otherwise stored in the memory cells in the redundancy window. The selected group includes at least one column on one side of the defective column and another column on the other side of the defective column. Typically, there will be multiple columns on each side of the defective column.
1. A method of memory redundancy in a memory array, said method comprising:
identifying a particular column of a memory array, wherein said memory array comprises a plurality of columns of memory cells organized into separate input/output (I/O) groups, wherein columns within an I/O group are coupled to a respective I/O pad;
defining a redundancy window by selecting a group of adjacent columns including said particular column, wherein said redundancy window comprises columns from two adjacent I/O groups, wherein the number of columns in said group is determined according to the number of columns in a redundancy array that is coupled to said memory array, said redundancy array a replacement for said redundancy window, wherein said group comprises at least a first column on one side of said particular column and a second column on the other side of said particular column; and
programming memory cells in said first column and memory cells in said second column.
2. The method of claim 1 wherein said memory array utilizes a mirror bit architecture wherein two bits of data are stored in a memory cell.
3. The method of claim 1 wherein said programming comprises:
programming functional memory cells in said redundancy window.
4. The method of claim 1 wherein said particular column is approximately in the middle of said group of adjacent columns.
5. The method of claim 1 wherein said first column is located at one boundary of said redundancy window and said second column is located at the other boundary of said redundancy window.
6. The method of claim 1 wherein said redundancy window is defined by specifying an address corresponding to a boundary of said redundancy window.
7. A method of memory redundancy in a memory array, said method comprising:
selecting a particular column of said memory array, wherein said memory array comprises a plurality of columns of memory cells, said plurality of columns organized as separate input/output (I/O) groups wherein columns in an I/O group are coupled to a respective I/O node; and
establishing a redundancy window by selecting a group of adjacent columns including said particular column, wherein the number of columns in said group of adjacent columns is determined according to the number of columns in a redundancy array that is coupled to said memory array, said redundancy array a replacement for said redundancy window, wherein said group of adjacent columns comprises at least a first column on one side of said particular column and a second column on the other side of said particular column and wherein said group of adjacent columns comprises columns from two adjacent I/O groups.
8. The method of claim 7 further comprising:
programming memory cells in said first column and memory cells in said second column.
9. The method of claim 8 wherein said programming comprises:
programming functional memory cells in said group of adjacent columns.
10. The method of claim 7 wherein said memory array utilizes a mirror bit architecture wherein two bits of data are stored in a memory cell.
11. The method of claim 7 wherein said memory array is a virtual ground architecture memory array.
12. The method of claim 7 wherein said particular column is approximately in the middle of said group of adjacent columns.
13. The method of claim 7 wherein said first column is located at one boundary of said redundancy window in a first I/O group and wherein said second is located at the other boundary of said redundancy window in a second I/O group.
14. The method of claim 7 wherein said redundancy window is established using an address that identifies a boundary of said redundancy window.
15. A method of memory redundancy comprising:
receiving an address for a memory location in a memory array, wherein said memory array comprises a plurality of columns of memory cells, said plurality of columns organized as separate input/output (I/O) groups wherein columns in an I/O group are coupled to a respective I/O node;
determining an actual memory location corresponding to said address, wherein said actual memory location is either in said memory array or in a redundancy array coupled to said memory array, wherein said redundancy array is a replacement for a redundancy window defined for said memory array, said redundancy window comprising a group of adjacent columns including a particular column of said memory array, wherein said group of adjacent columns comprises at least a first column on one side of said particular column and a second column on the other side of said particular column and wherein said group of adjacent columns comprises columns from two adjacent I/O groups.
16. The method of claim 15 wherein said determining comprises:
comparing said address to an address that defines a boundary of said redundancy window.
17. The method of claim 15 wherein said memory array utilizes a mirror bit architecture wherein two bits of data are stored in a memory cell.
18. The method of claim 15 wherein said particular column is approximately in the middle of said group of adjacent columns.
19. The method of claim 15 wherein said first column is located at one boundary of said redundancy window in a first I/O group and wherein said second is located at the other boundary of said redundancy window in a second I/O group.
20. The method of claim 15 further comprising:
reading information in said redundancy array;
reading information in said memory array at said memory location corresponding to said address; and
selecting between said information read from said redundancy array and said information read from said memory array according to said actual memory location.
21. A method of memory redundancy comprising:
reading information stored in a redundancy array coupled to a memory array, wherein said memory array comprises a plurality of columns of memory cells, said plurality of columns organized as separate input/output (I/O) groups wherein columns in an I/O group are coupled to a respective I/O node, wherein said redundancy array is associated with a redundancy window defined for said memory array, said redundancy window comprising a group of adjacent columns including a particular column of said memory array, wherein said group of adjacent columns comprises at least a first column on one side of said particular column and a second column on the other side of said particular column and wherein said group of adjacent columns comprises columns from two adjacent I/O groups, wherein said redundancy array stores information from said two I/O groups; and
determining which of said I/O groups said information is associated with.
22. The method of claim 21 wherein said determining comprises:
comparing an address associated with said information to addresses that define boundaries of said I/O groups.
23. The method of claim 21 wherein said memory array utilizes a mirror bit architecture wherein two bits of data are stored in a memory cell.