Lateral doped channel
View Patent ↗A lateral doped channel. A first doping material is implanted substantially vertically into a region adjacent to a gate structure. A diffusion process diffuses the first doping material into a channel region beneath the gate structure. A second doping material is implanted substantially vertically into the region adjacent to a gate structure. The second implantation forms source/drain regions and may terminate the channel region. The channel region thus comprises a laterally non-uniform doping profile which beneficially mitigates the short channel effect and is highly advantageous as compensation for manufacturing process variations in channel length.
1. A method of manufacturing a lateral doped channel comprising:
implanting a first doping material substantially vertically into a first region adjacent to a gate structure and into a second region adjacent to said gate structure, wherein said first doping material is a P-type doping material;
constructing spacers adjacent to said gate structure; and
implanting a second doping material substantially vertically into said first region adjacent to said gate structure and into said second region adjacent to said gate structure to form a source region and a drain region respectively, wherein said spacers substantially prevent implantation of said second doping material into regions substantially beneath said spacers, wherein said second doping material is an N-type doping material, and wherein said regions beneath said spacers maintain said first doping material as a dominant dopant, wherein said lateral doped channel is part of a memory semiconductor cell.
2. The method as described in claim 1 wherein said memory semiconductor cell is non-volatile.
3. The method as described in claim 2 wherein said memory semiconductor cell comprises a nitride layer as a storage element.
4. The method as described in claim 2 wherein said memory semiconductor cell comprises a floating gate as a storage element.
5. The method of manufacturing a lateral doped channel as described in claim 1 wherein said second doping material substantially dominates the charge carrier characteristics of a region implanted by said second doping material.