Method of manufacturing semiconductor devices
View Patent ↗A method of manufacturing a semiconductor device is disclosed. The method includes depositing an O 3 -TEOS oxide film having a good flow-like property under a high adhesive force in order to prevent degradation in the characteristic of the surface of a lower insulating film made of a PE-TEOS oxide film and generation of defect due to the topology difference. Therefore, the disclosed method can improve the electrical characteristic of a semiconductor device and the manufacturing yield.
1. A method of manufacturing a semiconductor device comprising:
forming a insulating film on a semiconductor substrate;
forming a conductive layer pattern on the insulating film leaving a portion of the insulating film exposed;
forming an O 3 -TEOS oxide film on the conductive layer pattern and the insulating film; and
wherein said O 3 -TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å and at a temperature ranging from abort 500 to 550° C.
2. The method as claimed in claim 1 , wherein said insulating film is a PE-TEOS oxide film.
3. The method as claimed in claim 1 , wherein a density of O 3 ranges from about 135 to about 180 g/m 3 during the deposition of said O 3 -TEOS oxide film.
4. The method as claimed in claim 1 , further comprising performing an annealing process after the step of forming said O 3 -TEOS oxide film.
5. The method as claimed in claim 4 , wherein said annealing process is performed at a temperature ranging from about 750 to about 1000° C.
6. A method of manufacturing a semiconductor device comprising:
forming a PE-TEOS oxide film on a semiconductor substrate in which transistors and bit lines are formed, the transistors being formed in a cell region and in a peripheral circuit region;
forming capacitors on the PE-TEOS oxide film of the cell region; and
forming an O 3 -TEOS oxide film on the entire structure including the capacitors and the PE-TEOS oxide film,
wherein said O 3 -TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å at a temperature ranging from abort 500 to 550° C.
7. The method as claimed in claim 6 , wherein the density of O 3 ranges from about 135 to about 180 g/m 3 during the deposition of said O 3 -TEOS oxide film.
8. The method as claimed in claim 6 , further comprising performing an annealing process after the step of forming said O 3 -TEOS oxide film.
9. The method as claimed in claim 8 , wherein said annealing process is performed at a temperature ranging from about 750 to about 1000° C.
10. A method of manufacturing a semiconductor device comprising:
forming a insulating film on a semiconductor substrate;
forming a conductive layer pattern on the insulating film leaving a portion of the insulating film exposed;
forming an O 3 -TEOS oxide film on the conductive layer pattern and the exposed portion of the insulating film; wherein said O 3 -TEOS oxide film is deposited in thickness ranging from about 2500 to about 5000 Å and at a temperature ranging from about 500 to about 550° C.; and
wherein a density of O 3 ranges from about 135 to about 180 g/m 3 during the deposition of said O 3 -TEOS oxide film.
11. The method as claimed in claim 10 , wherein said insulating film is a PE-TEOS oxide film.
12. The method as claimed in claim 10 , further comprising performing an annealing process after the step of forming said O 3 -TEOS oxide film.
13. The method as claimed in claim 12 , wherein said annealing process is performed at a temperature ranging from about 750 to about 1000° C.