Amorphous carbon metal-to-metal antifuse with adhesion promoting layers

1. A metal-to-metal antifuse comprising:

a lower metal electrode;

a lower adhesion promoting layer disposed over said lower metal electrode, said lower adhesion promoting layer being without substantial affect on electrical characteristics of the antifuse;

an amorphous carbon antifuse material layer disposed over said lower adhesion promoting layer;

an upper adhesion promoting layer disposed over said antifuse material layer, said upper adhesion promoting layer being without substantial affect on electrical characteristics of the antifuse; and

an upper metal electrode disposed over said upper adhesion promoting layer,

wherein said lower adhesion promoting layer and said upper adhesion promoting layer are selected from a group of materials comprising Si x C y , having a ratio of x to y of about 1+/−0.4, and Si x N y .

2. The metal-to-metal antifuse in claim 1 , wherein said lower adhesion promoting layer is about 2 angstroms to about 20 angstroms in thickness and said upper adhesion promoting is about 2 angstroms to about 20 angstroms in thickness.

3. The metal-to-metal antifuse in claim 1 , wherein said Si x C y has a dielectric constant of about 4 to about 6.

4. The metal-to-metal antifuse in claim 1 , wherein a ratio of x to y in said Si x N y is about 0.75+/−0.225.

5. The metal-to-metal antifuse in claim 1 , wherein said Si x N y has a dielectric constant of about 6 to about 8.

6. The metal-to-metal antifuse in claim 2 , wherein said Si x C y has a dielectric constant of about 4 to about 6.

7. The metal-to-metal antifuse in claim 2 , wherein a ratio of x to y in said Si x N y is about 0.75+/−0.225.

8. The metal-to-metal antifuse in claim 2 , wherein said Si x N y has a dielectric constant of about 6 to about 8.

9. The metal-to-metal antifuse in claim 1 , wherein said amorphous carbon antifuse material layer is about 50 angstroms to about 500 angstroms in thickness.

10. The metal-to-metal antifuse in claim 1 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

11. The metal-to-metal antifuse in claim 1 , wherein said amorphous carbon antifuse material layer is doped with hydrogen in a concentration range of about 1 atomic percent to about 40 atomic percent.

12. The metal-to-metal antifuse in claim 11 , wherein said amorphous carbon antifuse material layer is about 50 angstroms to about 500 angstroms in thickness.

13. The metal-to-metal antifuse in claim 11 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

14. The metal-to-metal antifuse in claim 1 , wherein said amorphous carbon antifuse material layer is about 50 angstroms to about 500 angstroms in thickness, and said lower adhesion promoting layer and said upper adhesion promoting layer are about 2 angstroms to about 20 angstroms in thickness.

15. The metal-to-metal antifuse in claim 14 , wherein said Si x C y has a dielectric constant of about 4 to about 6.

16. The metal-to-metal antifuse in claim 14 , wherein a ratio of x to y in said Si x N y is about 0.75+/−0.225.

17. The metal-to-metal antifuse in claim 14 , wherein said Si x N y has a dielectric constant of about 6 to about 8.

18. The metal-to-metal antifuse in claim 14 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

19. The metal-to-metal antifuse in claim 14 , wherein said amorphous carbon antifuse material layer is doped with hydrogen from about 1 atomic percent to about 40 atomic percent.

20. The metal-to-metal antifuse in claim 19 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

21. The metal-to-metal antifuse in claim 1 , wherein a layer comprising said lower adhesion promoting layer, said amorphous carbon antifuse material layer, and said upper adhesion promoting layer have a dielectric constant of about 4 to about 5.5.

22. A metal-to-metal antifuse comprising:

a lower metal electrode;

a lower adhesion promoting layer disposed over said lower metal electrode, said lower adhesion promoting layer having a thickness of about 2 angstroms to 20 angstroms;

an amorphous carbon antifuse material layer disposed over said lower adhesion promoting layer;

an upper adhesion promoting layer disposed over said antifuse material layer, said upper adhesion promoting layer having a thickness of about 2 angstroms to 20 angstroms; and

an upper metal electrode disposed over said upper adhesion promoting layer,

wherein said lower adhesion promoting layer and said upper adhesion promoting layer are selected from a group of materials comprising Si x C y , having a ratio of x to y of about 1+/−0.4, and Si x N y .

23. The metal-to-metal antifuse in claim 22 , wherein said Si x C y has a dielectric constant of about 4 to about 6.

24. The metal-to-metal antifuse in claim 22 , wherein a ratio of x to y in said Si x N y is about 0.75+/−0.225.

25. The metal-to-metal antifuse in claim 22 , wherein said Si x N y has a dielectric constant of about 6 to about 8.

26. The metal-to-metal antifuse in claim 22 , wherein said amorphous carbon antifuse material layer is about 50 angstroms to about 500 angstroms in thickness.

27. The metal-to-metal antifuse in claim 22 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

28. The metal-to-metal antifuse in claim 22 , wherein said amorphous carbon antifuse material layer is doped with hydrogen in a concentration range of about 1 atomic percent to about 40 atomic percent.

29. The metal-to-metal antifuse in claim 28 , wherein said amorphous carbon antifuse material layer is about 50 angstroms to about 500 angstroms in thickness.

30. The metal-to-metal antifuse in claim 28 , wherein said amorphous carbon antifuse material layer has a dielectric constant of about 2.5 to about 4.

31. The metal-to-metal antifuse in claim 22 , wherein said lower adhesion promoting layer, said amorphous carbon antifuse material layer, and said upper adhesion promoting layer have a dielectric constant of about 4 to about 5.5.

32. The metal-to-metal antifuse in claim 1 , wherein said lower adhesion promoting layer and said upper adhesion promoting layer are selected from a group of materials comprising Si x C y , Si x N y , Si x C y N z , Si x O y C z , and Si x O y N z .

33. A metal-to-metal antifuse comprising:

a lower metal electrode;

a lower Si x C y layer disposed over said lower metal electrode, said lower Si x C y layer being without substantial affect on electrical characteristics of the antifuse;

an amorphous carbon antifuse material layer disposed over said lower Si x C y layer;

an upper Si x C y layer disposed over said antifuse material layer, said upper Si x C y layer being without substantial affect on electrical characteristics of the antifuse; and

an upper metal electrode disposed over said upper Si x C y layer, wherein said lower Si x C y layer and said upper Si x C y layer have a ratio of x to y of about 1+/−0.4.

34. A metal-to-metal antifuse comprising:

a lower metal electrode;

a lower Si x N y layer disposed over said lower metal electrode, said lower Si x N y layer being without substantial affect on electrical characteristics of the antifuse;

an amorphous carbon antifuse material layer disposed over said lower Si x N y layer;

an upper Si x N y layer disposed over said antifuse material layer, said upper Si x N y layer being without substantial affect on electrical characteristics of the antifuse; and

an upper metal electrode disposed over said upper Si x N y layer,

wherein said lower Si x N y layer and said upper Si x N y layer have a ratio of x to y of about 0.75+/−0.225.