IP Library Granted Patent US 6,838,899
Granted Patent B2
US 6,838,899 · App. 10/335,234 · Granted Jan 4, 2005

Apparatus and method of error detection and correction in a radiation-hardened static random access memory field-programmable gate array

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Quick Facts
Patent No.
US 6,838,899
App. No.
10/335,234
Granted
Jan 4, 2005
Kind
B2
Abstract

The present system comprises a radiation tolerant programmable logic device having logic modules and routing resources coupling together the logic modules. Configuration data lines providing configuration data control the programming of the logic modules and the routing resources. Error correction circuitry coupled to the configuration data lines analyzes and corrects any errors in the configuration data that may occur due to a single event upset (SEU). The present system also comprises a method for correcting errors in a programmable logic device having configuration data to program the programmable logic device. The method comprises a background reading of the configuration data. Next, the configuration data is analyzed for errors. Finally, the configuration data is then corrected and the configuration data is rewritten if errors are located.

Claims (38)

1. A radiation tolerant programmable logic device comprising:

logic modules;

routing resources coupling said logic modules;

configuration data lines having configuration data controlling said logic modules and said routing resources; and

error correction circuitry coupled to said configuration data lines, wherein said error correction circuitry analyzes and corrects errors in said configuration data.

2. A radiation tolerant programmable logic device according to claim 1 wherein said error correction circuitry further comprises:

a radiation tolerant read/write amplifier; and

a radiation tolerant shift register coupled to said radiation tolerant read/write amplifier.

3. A radiation tolerant programmable logic device according to claim 2 wherein said wherein said error correction circuitry further comprises:

a voting block coupled between said radiation tolerant read/write amplifier and said configuration data line.

4. A radiation tolerant programmable logic device according to claim 3 wherein said wherein said error correction circuitry further comprises a plurality of latches having at least one transistor large enough to withstand a Qcnt or larger particle strike, said latches coupled to said voting block.

5. A radiation tolerant programmable logic device according to claim 1 wherein said wherein said error correction circuitry further comprises:

a plurality of electronic code correction (ECC) latches each having a plurality of inputs and an output;

a first multiplexer having an input and a plurality of outputs;

a voting logic circuit having inputs coupled to at least one output of said plurality of ECC latches and coupled to at least one of said outputs of said multiplexer and said voting logic circuit having an output coupled to first input of a two-input multiplexer;

a radiation tolerant shift register coupled to one of said plurality of outputs of said first multiplexer and an output coupled to a second input of said two-input multiplexer;

a write latch having an input coupled to an output of said two-input multiplexer; and

a read and write amplifier having an input coupled to an output of said write latch and at lease one of said plurality of outputs of said first multiplexer.

6. A radiation tolerant programmable logic device according to claim 5 , wherein said voting logic circuit further comprises:

three two-input AND gates; and

a three-input AND gate having inputs coupled to an output of each of said three two-input AND gates.

7. A radiation tolerant programmable logic device according to claim 5 , wherein said read and write amplifier further comprises:

a write amplifier circuit having a plurality of inputs and a plurality of outputs;

a precharge circuit coupled to said input of said write amplifier circuit and having a plurality of outputs; and

a sense circuit having inputs coupled to said outputs of said write amplifier circuit and said outputs of said precharge circuit and having an output.

8. A radiation tolerant programmable logic device according to claim 5 , wherein said ECC latches further comprise:

a first transistor of a first nominal size having an source coupled to a first node forming an input to said ECC latch, a drain coupled to a second node and a gate coupled to a logic module signal line;

a second transistor of a nominal size having an source coupled to said first node, a drain coupled to said second node and a gate coupled to an inverted logic module signal line;

a first two-input NAND gate having a first input coupled to said second node and a second input coupled to a reset signal line;

a second two-input NAND gate having a first input coupled to an output of first two-input NAND gate and a second input coupled to a set signal line and having an output to said output of said ECC latch;

a third transistor of second larger size having a source coupled to a third node, a drain coupled to a fourth node and a gate coupled to a second logic module signal line; and

a fourth transistor of second larger size having a source coupled to said third node, said third coupled to said output of said second two-input NAND gate, a drain coupled to said forth node, said fourth node coupled to said first input of said first two-input NAND gate, and a gate coupled to a second inverted logic module signal line.

9. A method for correcting errors in a programmable logic device having configuration data to program the programmable logic device, said method comprising:

background reading of the configuration data;

analyzing said configuration data for errors;

correcting said configuration data if errors are located; and

re-writing said configuration data if errors are located.

10. The method of claim 9 where said analyzing of said configuration data for errors is accomplished with voting logic.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded May 29, 2018
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.), INC.; MICROSEMI FREQUENCY AND TIME CORPORATION; MICROSEMI COMMUNICATIONS, INC.; MICROSEMI SOC CORP.; MICROSEMI CORP. - POWER PRODUCTS GROUP; MICROSEMI CORP. - RF INTEGRATED SOLUTIONS
Reel/Frame 046251/0391 →
PATENT SECURITY AGREEMENT Recorded Feb 3, 2016
From: MICROSEMI CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC. (F/K/A LEGERITY, INC., ZARLINK SEMICONDUCTOR (V.N.) INC., CENTELLAX, INC., AND ZARLINK SEMICONDUCTOR (U.S.) INC.); MICROSEMI FREQUENCY AND TIME CORPORATION (F/K/A SYMMETRICON, INC.); MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION); MICROSEMI SOC CORP. (F/K/A ACTEL CORPORATION); MICROSEMI CORP. - POWER PRODUCTS GROUP (F/K/A ADVANCED POWER TECHNOLOGY INC.); MICROSEMI CORP. - RF INTEGRATED SOLUTIONS (F/K/A AML COMMUNICATIONS, INC.)
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037691/0697 →
RELEASE OF SECURITY INTEREST Recorded Jan 19, 2016
From: BANK OF AMERICA, N.A.
To: MICROSEMI CORPORATION; MICROSEMI CORP.-ANALOG MIXED SIGNAL GROUP, A DELAWARE CORPORATION; MICROSEMI SOC CORP., A CALIFORNIA CORPORATION; MICROSEMI SEMICONDUCTOR (U.S.) INC., A DELAWARE CORPORATION; MICROSEMI FREQUENCY AND TIME CORPORATION, A DELAWARE CORPORATION; MICROSEMI COMMUNICATIONS, INC. (F/K/A VITESSE SEMICONDUCTOR CORPORATION), A DELAWARE CORPORATION; MICROSEMI CORP.-MEMORY AND STORAGE SOLUTIONS (F/K/A WHITE ELECTRONIC DESIGNS CORPORATION), AN INDIANA CORPORATION
Reel/Frame 037558/0711 →
CHANGE OF NAME Recorded Dec 28, 2015
From: ACTEL CORPORATION
To: MICROSEMI SOC CORP.
Reel/Frame 037393/0562 →
NOTICE OF SUCCESSION OF AGENCY Recorded Apr 9, 2015
From: ROYAL BANK OF CANADA (AS SUCCESSOR TO MORGAN STANLEY & CO. LLC)
To: BANK OF AMERICA, N.A., AS SUCCESSOR AGENT
Reel/Frame 035657/0223 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2011
From: WHITE ELECTRONIC DESIGNS CORP.; ACTEL CORPORATION; MICROSEMI CORPORATION
To: MORGAN STANLEY & CO. INCORPORATED
Reel/Frame 025783/0613 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 6, 2003
From: PLANTS, WILLIAM C.
To: ACTEL CORPORATION
Reel/Frame 013829/0834 →