IP Library Granted Patent US 7,510,692
Granted Patent B2
US 7,510,692 · App. 10/565,353 · Granted Mar 31, 2009

Hydride gas purification for the semiconductor industry

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Quick Facts
Patent No.
US 7,510,692
App. No.
10/565,353
Granted
Mar 31, 2009
Kind
B2
Abstract

A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.

Claims (24)

1. A method for removal of contaminants from a stream of hydride gas, comprising contacting the hydride gas stream with a material comprising: a) 3-20% by weight of at least one metal oxide from the lanthanide series and b) at least one transition metal, or oxide thereof, to reduce the level of contaminants of the gas stream to not more than about 100 parts per billion (ppb), the material being substantially unaffected by the gas, wherein the transition metal is selected from the group consisting of molybdenum (Mo), manganese (Mn), chromium (Cr), rhenium (Re), platinum (Pt), rhodium (Rh), ruthenium (Ru), vanadium (V), titanium (Ti), and cobalt (Co).

2. The method of claim 1 , wherein the metal oxide from the lanthanide series is an oxide of a metal selected from the group consisting of lanthanide (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm) and ytterbium (Yb).

3. The method of claim 1 , wherein the metal oxide from the lanthanide series is an oxide of a metal selected from the group consisting of La, Ce and Sm.

4. The method of claim 1 , wherein the material further comprises a highly electropositive metal or highly electropositive metal oxide.

5. The method of claim 1 , wherein the material further comprises a rare earth metal selected from the group consisting of scandium (Sc), yttrium (Y) and lutetium (Lu), a lanthanide metal or oxide thereof, or a combination thereof.

6. The method of claim 1 , wherein the transition metal is selected from the group consisting of manganese, chromium, molybdenum, vanadium, and titanium.

7. The method of claim 1 , wherein the material is supported on a support substrate.

8. The method of claim 1 , wherein the material has a surface area of less than about 100 m 2 /g.

9. The method of claim 1 , wherein the material has a surface area of less than about 75 m 2 /g.

10. The method of claim 1 , wherein the material has a surface area of less than about 50 m 2 /g.

11. The method of claim 1 , wherein the material has a surface area of less than about 20 m 2 /g.

12. The method of claim 1 , wherein the material has a capacity for oxygen that is at least about 4 liters of oxygen per liter of material at 25° C. and 15 psig.

13. The method of claim 12 , wherein the material further has a capacity for water vapor that is at least about 4 liters of water vapor per liter of material at 25° C. and 15 psig.

14. The method of claim 1 , wherein the hydride gas is selected from the group consisting of ammonia, arsine, phosphine, diborane, disilane, germane, silane and hydrogen.

15. The method of claim 1 , wherein one or more of the contaminants are selected from the group consisting of water, carbon dioxide, oxygen, non-methane hydrocarbons, hydride gas oxidation products, secondary hydride gas contaminants, SO x and NO x , wherein x is 1-3.

16. The method of claim 15 , wherein one or more of the contaminants are selected from the group consisting of water, oxygen and a combination thereof.

17. The method of claim 1 , wherein one or more of the contaminants are volatile metal compounds.

18. The method of claim 1 , wherein one or more of the contaminants are metal-containing compounds.

19. The method of claim 1 , wherein the metal of the lanthanide series is lanthanum oxide or cerium oxide.

20. The method of claim 1 , wherein the transition metal oxide is manganese oxide.

21. A composition for the purification of hydride gases, comprising: a) 3-20% by weight of at least one metal oxide from the lanthanide series; and b) at least one transition metal, or oxide thereof, wherein the composition is essentially free of at least one of copper, iron and nickel; and the transition metal is selected from the group consisting of molybdenum (Mo), manganese (Mn), chromium (Cr), rhenium (Re), platinum (Pt), rhodium (Rh), ruthenium (Ru), vanadium (V), titanium (Ti), and cobalt (Co).

22. The composition of claim 21 , wherein the transition metal or oxide thereof is manganese oxide.

23. A method of removal of one or more contaminants from a stream of hydride gas, comprising contacting the hydride gas stream with a material comprising: a) 3-20% by weight of at least one metal oxide from the lanthanide series selected from the group consisting of praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm) and ytterbium (Yb); and b) zirconium (Zr), or oxide thereof, to reduce the level of contaminants of the gas stream to not more than about 100 parts per billion (ppb), the material being substantially unaffected by the gas.

24. A method of removal of one or more contaminants from a stream of hydride gas, comprising contacting the hydride gas stream with a material comprising: a) lanthanum oxide or cerium oxide; and b) zirconium (Zr), or oxide thereof, to reduce the level of contaminants of the gas stream to not more than about 100 parts per billion (ppb), the material being substantially unaffected by the gas, wherein the hydride gas is selected from the group consisting of ammonia, arsine, phosphine, diborane, disilane, germane and hydrogen.

Assignments (11)
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
ASSIGNMENT OF PATENT SECURITY INTEREST RECORDED AT REEL/FRAME 048811/0679 Recorded Nov 5, 2019
From: GOLDMAN SACHS BANK USA
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 050965/0035 →
SECURITY INTEREST Recorded Nov 13, 2018
From: ENTEGRIS, INC.; SAES PURE GAS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 048811/0679 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0151 →
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
To: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ATMI PACKAGING, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.
Reel/Frame 047477/0032 →
SECURITY INTEREST Recorded May 2, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032812/0192 →
SECURITY INTEREST Recorded May 1, 2014
From: ENTEGRIS, INC.; POCO GRAPHITE, INC.; ATMI, INC.; ADVANCED TECHNOLOGY MATERIALS, INC.; ATMI PACKAGING, INC.
To: GOLDMAN SACHS BANK USA, AS COLLATERAL AGENT
Reel/Frame 032815/0852 →
RELEASE OF SECURITY INTEREST Recorded Aug 17, 2011
From: WELLS FARGO BANK NATIONAL ASSOCIATION
To: ENTEGRIS, INC.
Reel/Frame 026764/0880 →
SECURITY AGREEMENT Recorded Mar 9, 2009
From: ENTEGRIS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS AGENT
Reel/Frame 022354/0784 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2006
From: SPIEGELMAN, JEFFREY J.
To: ENTEGRIS, INC.
Reel/Frame 017372/0143 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2006
From: ALVAREZ JR., DANIEL; COOK, JOSHUA T.; NGUYEN, TRAM DOAN; LEV, DANIEL A.; SCOGGINS, TROY B.
To: ENTEGRIS, INC.
Reel/Frame 017484/0544 →