Infrared thermopile detector system for semiconductor process monitoring and control
View Patent ↗A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.
1. A method of operating a semiconductor process including processing of or with a gas, said method comprising transmitting infrared radiation through the gas for infrared radiation absorbance by a desired component of said gas, detecting the infrared radiation transmitted through the gas with a thermopile detector, generating an output from said thermopile detector indicative of concentration of said selected component of said gas, and controlling one or more conditions in and/or affecting the semiconductor process, in response to said output.
2. The method of claim 1 , wherein the one or more conditions in and/or affecting the process include flow rate of a chemical reagent to a semiconductor process tool.
3. The method of claim 1 , wherein the one or more conditions in and/or affecting the process include flow rate of a gas stream discharged from or flowed to a process unit in the semiconductor process.
4. The method of claim 3 , wherein the gas stream to a semiconductor process tool is monitored.
5. The method of claim 3 , wherein the gas stream flowed to an abatement unit is monitored.
6. A method of operating a semiconductor process including processing of or with a gas, said method comprising sensing concentration of a desired component of said gas with a thermopile detector, generating an output from said thermopile detector indicative of concentration of said selected component of said gas, and controlling one or more conditions in and/or affecting the semiconductor process, in response to said output, wherein the one or more conditions in and/or affecting the process include flow rate of a gas stream discharged from or flowed to a process unit in the semiconductor process, and wherein the gas stream discharged by an abatement unit is monitored.
7. The method of claim 1 , wherein the thermopile sensor output is employed to modulate a valve.
8. The method of claim 1 , wherein the thermopile detector output is employed to modulate a set point of a mass flow controller.
9. A method of operating a semiconductor process including processing of or with a gas, said method comprising sensing concentration of a desired component of said gas with a thermopile detector, generating an output from said thermopile detector indicative of concentration of said selected component of said gas, and controlling one or more conditions in and/or affecting the semiconductor process, in response to said output, wherein the thermopile detector output is employed to modulate flow of a scrubbing medium in an abatement treatment step of the process.
10. The method of claim 1 , wherein the thermopile detector output is employed to terminate a first process step and initiate a second process step.
11. A method of operating a semiconductor process including processing of or with a gas, said method comprising sensing concentration of a desired component of said gas with a thermopile detector, generating an output from said thermopile detector indicative of concentration of said selected component of said gas, and controlling one or more conditions in and/or affecting the semiconductor process, in response to said output, wherein the thermopile detector output is employed to modulate recycle of a fluid stream in the process.
12. A method of operating a semiconductor process including processing of or with the material, said method comprising transmitting infrared radiation through the material for infrared radiation absorbance by a desired component of said material, detecting the infrared radiation transmitted through the material with a thermopile detector, generating an output from sent thermopile indicative of concentration of said selected component of said material, and controlling one or more conditions in and/or affecting the semiconductor process, in response to said output.
13. The method of claim 12 , wherein the material comprises a solid.
14. The method of claim 12 , wherein the material comprises a fluid.
15. The method of claim 12 , wherein the material comprises a liquid.
16. The method of claim 12 , wherein the material comprises a gas.