Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films
View Patent ↗A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.
1. A stabilized cyclosiloxane material for use as a dielectric precursor, the stabilized cyclosiloxane material comprising a cyclosiloxane reagent, an end-capping reagent, and a free radical inhibitor, wherein the end-capping reagent is selected from the group consisting of compounds of the formula
R 1 R 2 R 3 SiX
wherein:
each of R 1 , R 2 and R 3 is independently selected from among H, C 1 -C 8 alkyl and C 5 -C 12 aryl; and
X is selected from among OH 1 and nitrogen-containing silyl, and when any of R 1 , R 2 or R 3 is C 5 -C 12 aryl, then X can also be silyloxy.
2. The stabilized siloxane dielectric precursor according to claim 1 , wherein said cyclosiloxane reagent is of the formula:
[RR′Si—O] n
wherein each of R and R′ is same or different and independently selected from the group consisting of hydrogen, C 1 -C 8 alkyl, C 1 -C 8 alkoxy, C 1 -C 8 alkene, C 1 -C 8 alkyne, and C 1 -C 8 carboxyl; and n is from 2 to 8.
3. The stabilized siloxane dielectric precursor according to claim 1 , wherein said cyclosiloxane reagent is selected from the group consisting of: polyhedral oligomeric silsesquioxanes (POSS), octamethylcyclotetrasiloxane (OMCTS), hexamethylcyclotetra-siloxane (HMCTS), tetramethylcyclotetrasiloxane (TMCTS), and mixtures thereof.
4. A stabilized cyclosiloxane material for use as a dielectric precursor, the stabilized cyclosiloxane material comprising a cyclosiloxane reagent and an end-capping reagent wherein said cyclosiloxane reagent is 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS).
5. The stabilized siloxane dielectric precursor according to claim 1 , wherein said end-capping reagent and said free radical inhibitor together form a stabilizing agent which is present in a concentration range from about 0.0 1% to 10.0% by weight based on a total weight of said material, and said end-capping reagent is selected from the group consisting of bis(trimethylsiloxy)methylsilane, silyl-N-methylacetamides, trifluoropropyldimethylsilyl-N-methylacetamide and hexamethyldisilanzane.
6. The stabilized siloxane dielectric precursor according to claim 1 , wherein said stabilizing agent is present in a concentration range from 1.00 to 10.00% by weight.
7. The stabilized siloxane dielectric precursor according to claim 5 , wherein said stabilizing agent comprises butylated hydroxyl toluene.
8. The stabilized siloxane dielectric precursor according to claim 1 , wherein said end-capping agent reacts with hydroxyl or radical groups resulting from cleavage of a [Si—O] bond of the siloxane dielectric precursor.
9. The stabilized siloxane dielectric precursor according to claim 1 , wherein X is nitrogen-containing silyl.
10. The stabilized siloxane dielectric precursor according to claim 1 , wherein said end-capping reagent is selected from the group consisting of: napthylphenylmethylsilanol (NPMS), silyl-N-methylacetamides, trifluoropropyldimethylsilyl-N-methylacetamide (TFSA).
11. The stabilized siloxane dielectric precursor according to claim 5 , wherein said stabilizing agent comprises a phenol.
12. The stabilized siloxane dielectric precursor according to claim 5 , wherein said stabilizing agent comprises a hindered phenol.
13. The stabilized siloxane dielectric precursor according to claim 5 , wherein said free radical inhibitor is selected from the group consisting of butylated hydroxy toluene (BHT), hydroquinone, butylated hydro anisole (BHA) and diphenylamine.
14. A process for stabilizing a cyclosiloxane dielectric precursor, including dosing a cyclosiloxane reagent with a stabilizing agent comprising an end-capping regent and a free radical inhibitor, to yield a stabilized cyclosiloxane material comprising the cyclosiloxane reagent, the end-capping reagent, and the free radical inhibitor, wherein the end-capping reagent is selected from the group consisting of compounds of the formula
R 1 R 2 R 3 SiX
wherein:
each of R 1 , R 2 and R 3 is independently selected from among H, C 1 -C 8 alkyl and C 5 -C 12 aryl; and
X is selected from among OH, and nitrogen-containing silyl, and when any of R 1 , R 2 or R 3 is C 5 -C 12 aryl, the nX can also be silyoxy.
15. The process according to claim 14 , wherein said stabilizing agent is present in a concentration range from about 0.01% to 10.0% by weight.
16. The process according to claim 14 , wherein said stabilizing agent is present in a concentration range from about 0.05 to 1.00% by weight.
17. The process according to claim 14 , further comprising a purification step.
18. The process according to claim 17 , wherein said dosing occurs before, after or during said purification step.
19. The process according to claim 17 , wherein said purification step is selected from the group consisting of
(1) contacting the cyclosiloxane dielectric precursor with an adsorbent bed material, so as to remove therefrom at least a portion of the water, and optionally at least one other impurity, to produce a cyclosiloxane precursor having a reduced level of water and optionally at least one other impurity; and removing the purified cyclosiloxane precursor from the adsorbent bed material; and
(2) distilling a starting mixture comprising at least water and at least one cyclosiloxane dielectric precursor, in the presence of an azeotropic component, so as to form an azeotropic mixture with the water contained in said starting mixture; in order to produce (A) a distillate fraction comprising water and the azeotropic component and (B) a balance fraction comprising cyclosiloxane, whereby said balance fraction (B) is substantially reduced in water relative to said starting mixture; and
(3) a combination of 1 and 2.
20. The process according to claim 17 , wherein said purification step reduces concentrations of water and trace acids in cyclosiloxanes to levels in a range of from about 1 to 20 ppm and from about 0.001 to 0.00001 wt %, respectively.
21. A stabilized cyclosiloxane material for use as a dielectric precursor, the stabilized cyclosiloxane material comprising a cyclosiloxane reagent, and an end-capping reagent, wherein said cyclosiloxane reagent is selected from the group consisting of polyhedral oligomeric silsesquioxanes (POSS), hexamethylcyclotetra-siloxane (HMCTS), tetramethylcyclotetrasiloxane (TMCTS), and mixtures thereof, wherein the end-capping reagent is selected from the group consisting of compounds of the formula
R 1 R 2 R 3 SiX
wherein:
each of R 1 , R 2 and R 3 is independently selected from among H, C 1 -C 8 alkyl and C 5 -C 12 aryl; and
X is selected from among OH, and nitrogen-containing silyl, and when any of R 1 , R 2 or R 3 is C 5 -C 12 aryl, then X can also be silyoxy.
22. The stabilized cyclosiloxane material of claim 21 , dosed with a stabilizing agent comprising an end-capping reagent and optionally a free radical inhibitor.
23. The stabilized cyclosiloxane material of claim 22 , wherein said stabilizing agent is present in a concentration from about 0.01% to about 10.0% by weight based on a total weight of said material.
24. The stabilized cyclosiloxane material of claim 23 , where said end-capping reagent is selected from the group consisting of bis(trimethylsiloxy)methylsilane, silyl-N-methylacetamides, and trifluoropropyldimethylsilyl-N-methylacetamide.
25. The stabilized cyclosiloxane material of claim 24 comprising said free radical inhibitor, wherein said free radical inhibitor is selected from the group consisting of butylated hydroxy toluene (BHT), hydroquinone, butylated hydro anisole (BHA) and diphenylamine.
26. The stabilized cyclosiloxane material of claim 21 , wherein said cyclosiloxane reagent is POSS.
27. The stabilized cyclosiloxane material of claim 21 , wherein said cyclosiloxane reagent is HMCTS.
28. The stabilized cyclosiloxane material of claim 25 , wherein said stabilizing agent comprises a phenol.
29. The stabilized cyclosiloxane material of claim 28 , wherein said stabilizing agent comprises a hindered phenol.
30. The stabilized cyclosiloxane material of claim 24 , wherein said end capping reagent is selected from the group consisting of silyl-N-methylacetamides, and trifluoropropyldimethylsilyl-N-methylacetamide.
31. The stabilized cyclosiloxane material of claim 24 , wherein said end capping reagent is trifluoropropyldimethylsilyl-N-methylacetamide.
32. The stabilized cyclosiloxane material of claim 31 , wherein said end capping reagent is selected from the group consisting of silyl-N-methylacetamides.
33. The stabilized cyclosiloxane material of claim 25 comprising said free radical inhibitor, wherein said free radical inhibitor is selected from the group consisting of butylated hydroxy toluene (BHT), hydroquinone, and butylated hydro anisole (BHA).
34. The stabilized cyclosiloxane material of claim 33 comprising said free radical inhibitor, wherein said free radical inhibitor is selected from the group consisting of butylated hydroxy toluene (BHT), and hydroquinone.
35. The stabilized cyclosiloxane material of claim 34 comprising said free radical inhibitor, wherein said free radical inhibitor is butylated hydroxy toluene (BHT).
36. A cyclosiloxane composition, comprising:
(a) TMCTS;
(b) stabilizer comprising BHT and bis(trimethylsiloxy)methylsilane, wherein the stabilizer is present in the composition in an amount of from about 1% to 10% by weight, based on the weight of TMCTS, and wherein the cyclosiloxane composition contains less than 10 ppm water.