IP Library Granted Patent US 6,949,470
Granted Patent B2
US 6,949,470 · App. 10/664,333 · Granted Sep 27, 2005

Method for manufacturing circuit devices

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Quick Facts
Patent No.
US 6,949,470
App. No.
10/664,333
Granted
Sep 27, 2005
Kind
B2
Abstract

Priorly, semiconductor devices wherein a flexible sheet with a conductive pattern was employed as a supporting substrate, a semiconductor element was mounted thereon, and the ensemble was molded have been developed. In this case, problems occur that a multilayer wiring structure cannot be formed and warping of the insulating resin sheet in the manufacturing process is prominent. In order to solve these problems, a laminated plate 10 formed by laminating a first conductive film 11 and a second conductive film 12 is covered with a photoresist layer PR having opening portions 13 with inclined surfaces 13 S, a conductive wiring layer 14 is formed in the opening portions by electrolytic plating to form inverted inclined surfaces 14 R, and then, when covering the same with the sealing resin layer 21 , an anchoring effect is produced by making the sealing resin layer 21 bite into the inverted inclined surfaces 14 R so as to strengthen bonding of the sealing resin layer 21 with the conductive wiring layer 14.

Claims (16)

1. A method of manufacturing circuit devices, comprising:

preparing a substrate by laminating a first conductive film and a second conductive film to cover a principle surface of the first conductive film;

covering said second conductive film with a photoresist layer in a desirable pattern and having an inclined surface at opening portions;

selectively forming a conductive wiring layer at the opening portions of said photoresist layer and providing an inverted inclined surface around said conductive wiring layer;

removing said second conductive film by use of said conductive wiring layer as a mask;

fixedly fitting semiconductor elements on said first conductive film and electrically connecting electrodes of said semiconductor elements with predetermined parts of said conductive wiring layer;

covering said semiconductor elements with a sealing resin layer and making said sealing resin layer produce an anchoring effect at said inverted inclined surface of said conductive wiring layer; and

removing said first conductive film to expose said second conductive film positioned on the rear surface of said sealing resin layer and said conductive wiring layer.

2. The method of claim 1 , wherein said second conductive film is formed by silver electroplating.

3. The method of claim 1 , wherein said photoresist layer is heat-treated after development so as to form an inclined surface at said opening portions.

4. The method of claim 1 , wherein as said photoresist layer, a positive photoresist layer is used, and an inclined surface is formed by use of inferior resolution during development.

5. The method of claim 1 , wherein said conductive wiring layer is formed at said opening portion by copper electroplating while using said first conductive film as an electrode.

6. The method of claim 1 , wherein an etching solution for said second conductive film is an iodine-based solution.

7. The method of claim 1 , wherein said second conductive film and said sealing resin layer remaining when said first conductive film is etched are used as an etching stopper.

8. The method of claim 6 , wherein a solution containing ferric chloride or cupric chloride is used as a solution to perform said etching.

9. The method of claim 1 , wherein external electrodes are formed by adhering a brazing filler material to the remaining second conductive film.

Assignments (6)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2014
From: KANTO SANYO SEMICONDUCTOR CO., LTD.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033713/0296 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 4, 2014
From: SANYO ELECTRIC CO., LTD
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033670/0750 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2003
From: IGARASHI, YUSUKE; MIZUHARA, HIDEKI; SAKAMOTO, NORIAKI
To: SANYO ELECTRIC CO., LTD.; KANTO SANYO SEMICONDUCTORS CO., LTD.
Reel/Frame 014835/0811 →