Multiple operating voltage vertical replacement-gate (VRG) transistor
An architecture for creating multiple operating voltage MOSFETs. Generally, an integrated circuit structure includes a semiconductor area with a major surface formed along a plane and first and second spaced-apart doped regions formed in the surface. A third doped region forming a channel of different conductivity type than the first region is positioned over the first region. A fourth doped region of a different conductivity and forming a channel is positioned over the second region. The process of creating the gate structure for each of the two transistors allows for the formation of oxide layers of different thickness between the two transistors. The transistors are therefore capable of operating at different operating voltages (including different threshold voltages). Each transistor further includes fifth and sixth layers positioned respectively over the third and fourth regions and having an opposite conductivity type with respect to the third and fourth regions. In an associated method of manufacturing the semiconductor device, a first and second source/drain regions are formed in a semiconductor layer. A first field-effect transistor gate region, including a channel and a gate electrode is formed over the first source drain region and a second field-effect transistor gate region is formed over the second source/drain region. Fifth and sixth source/drain regions are then formed for each of the first and second field-effect transistors and further having the appropriate conductivity type. Variable thickness gate oxides are created by appropriately masking, etching, and regrowing gate oxides. As a result, the formed transistors operate at different operating voltages. Thus a plurality of such transistors operating at different operating voltage (as a function of the gate oxide thickness) can be formed in an integrated circuit.
1. A method for fabricating a semiconductor device with a plurality of field-effect transistors comprising:
forming a first device region, selected from the group consisting of a source region and a drain region, of a first field-effect transistor on a semiconductor layer;
forming a second device region, selected from the group consisting of a source region and a drain region, of a second field-effect transistor on said semiconductor layer;
forming a first channel region over and in contact with said first device region, wherein said first channel region has an opposite conductivity type than the first device region;
forming a second channel region over and in contact with said second device region, wherein said second channel region has an opposite conductivity type than the second device region;
forming a gate adjacent said first channel region for said first field-effect transistor, wherein said gate has a first predetermined gate oxide thickness; and
forming a gate adjacent said second channel region for said second field-effect transistor, wherein said gate has a second predetermined gate oxide thickness, and wherein said first predetermined thickness is different than the second predetermined thickness.
2. The method of claim 1 including the additional step of configuring the first and the second device regions, and the first and the second gate regions into a circuit comprising two MOSFETs.
3. The method of claim 1 wherein the step of forming the gate having the first predetermined gate oxide thickness and the step of forming the gate having the second predetermined gate oxide thickness, comprises:
forming a gate for the first field-effect transistor, wherein said gate has a first predetermined gate oxide thickness;
forming a gate for the second field-effect transistor, wherein said gate has a first predetermined gate oxide thickness;
removing the oxide from said gate of the first field-effect transistor;
forming gate oxide material on said gate for said first field-effect transistor;
forming gate oxide material on said gate for said second field-effect transistor; and
such that the gate oxide of the first field-effect transistor has a thickness less than the thickness of the gate oxide for the second field-effect transistor.
4. The method of claim 1 wherein the first and the second field-effects transistors can withstand different gate input voltages as a consequence of the differing predetermined gate oxide thickness.
5. A method for fabricating a semiconductor device with a plurality of transistors comprising:
forming first and second spaced-apart diffusion regions on a semiconductor layer;
forming a first channel region over and in contact with said first diffusion region, wherein said first channel region has an opposite conductivity type than said first diffusion region;
forming a second channel region over and in contact with said second diffusion region wherein said second channel region has an opposite conductivity type than said second diffusion region;
forming a first gate oxide of a first predetermined thickness adjacent said first channel region;
forming a second gate oxide of a second predetermined thickness adjacent said second channel region, wherein the first predetermined thickness is different from the second predetermined thickness;
forming fifth and sixth semiconductor regions, each positioned over one of said first and said second channel regions, such that said first channel region and said fifth region are vertically aligned with one of said first and said second regions, and such that said second channel region and said sixth region are vertically aligned with the other of said first and second regions, the resulting structure providing two transistors with a substantially vertical current flow through the first and the second channel regions.
6. The method of claim 5 wherein the step of forming the first gate oxide of a first predetermined thickness adjacent the first channel region and the step of forming the second gate oxide of the second predetermined thickness adjacent the second channel region comprises:
forming a first gate oxide of a first predetermined thickness adjacent said first channel region;
forming a second gate oxide of said first predetermined thickness adjacent said second channel region;
removing said first gate oxide;
forming a third gate oxide of a second predetermined thickness adjacent said first channel region;
forming said third gate oxide of said third predetermined thickness adjacent said second channel region; and
wherein the gate oxide thickness adjacent said second channel region is the sum of said first predetermined thickness plus said second predetermined thickness.
7. The method of claim 5 wherein the first and the second gate oxides are associated with a first and a second MOSFET, and wherein said first and said second MOSFETs form a complementary MOSFET device, and wherein the gate terminals of said first MOSFET has a first breakdown voltage related to the first predetermined thickness, and wherein the gate terminals of said second MOSFET has a second breakdown voltage related to the second predetermined thickness.