Composition and method for low temperature deposition of silicon-containing films
View Patent ↗This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.
1. A silicon compound comprising a disilane derivative that is fully substituted with alkylamino and/or dialkylamino functional groups, with the proviso that the disilane substituents are not all simultaneously dimethylamino or diethylamino and with the proviso that all disilane substituents are not simultaneously monoalkylamino.
2. The silicon compound of claim 1 , characterized by two or more alkylamino and/or dialkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
3. The silicon compound of claim 1 , characterized by two or more alkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
4. The silicon compound of claim 1 , characterized by two or more dialkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
5. The silicon compound of claim 1 , characterized by a melting temperature of less than 100° C.
6. The silicon compound of claim 1 , characterized by a vaporization temperature of less than 300° C.
7. A silicon compound having the formula:
wherein:
R 1 -R 12 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, and C 3 -C 6 cycloalkyl, with the proviso that R 1 -R 12 are not all simultaneously methyl or ethyl and with the proviso that the substituents on each silane are not all simultaneously monoalkylamino or monocycloalkylamino.
8. The silicon compound of claim 7 , characterized by two or more alkylamino and/or dialkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
9. The silicon compound of claim 7 , characterized by two or more alkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
10. The silicon compound of claim 7 , characterized by two or more dialkylamino functional groups symmetrically distributed in relation to the Si—Si bond.
11. The silicon compound of claim 7 , characterized by a melting temperature of less than 100° C.
12. The silicon compound of claim 7 , characterized by a vaporization temperature of less than 300° C.
13. A silicon compound selected from the group consisting of (NEt 2 ) 2 (HNMe)Si—Si(HNMe)(NEt 2 ) 2 and (HNBu t ) 2 (NH 2 )Si—Si(NH 2 )(HNBu t ) 2 .
14. A method for forming a silicon compound as in claim 13 , comprising one of the following reactions:
(1) (NEt 2 ) 2 (Cl)Si—Si(Cl)(NEt 2 ) 2 +excess H 2 NMe→(NEt 2 ) 2 (HNMe)Si—Si(HNMe)(NEt 2 ) 2 +2H 2 NMe·HCl;
(2) (HNBu t ) 2 (Cl)Si—Si(Cl)(HNBu t ) 2 +2LiNH 2 →(HNBu t ) 2 (NH 2 Si(NH 2 )(HNBu t ) 2 +2LiCl.
15. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions with a vapor of a silicon compound as in claim 1 .
16. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions with a vapor of a silicon compound as in claim 7 .
17. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions with a vapor of a silicon compound as in claim 13 .
18. A composition for chemical vapor deposition of a silicon-containing film on a substrate, said composition comprising (i) one ore more disilane derivatives that are fully substituted with alkylamino and/or dialkylamino functional groups, with the proviso that the disilane substituents are not all simultaneously dimethylamino or diethylamino and with the proviso that all disilane substituents are not simultaneously monoalkylamino, and (ii) one or more hydrocarbon solvents.
19. The composition of claim 18 , wherein said hydrocarbon solvents comprise HN i Pr 2 .
20. The composition of claim 18 , comprising at least two disilane derivatives.
21. A composition for chemical vapor deposition of a silicon-containing film on a substrate, said composition comprising:
(a) one or more silicon compounds having the formula:
wherein:
R 1 -R 12 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, and C 3 -C 6 cycloalkyl, with the proviso that R 1 -R 12 are not all simultaneously methyl or ethyl and with the proviso that the substituents on each silane are not all simultaneously monoalkylamino or monocycloalkylamino; and
(b) one or more hydrocarbon solvents.
22. The composition of claim 21 , wherein said hydrocarbon solvents comprise HN i Pr 2 .
23. The composition of claim 21 , comprising at least two disilane derivatives.
24. A method of forming a silicon-containing film on a substrate, comprising the steps of:
(a) providing a composition as in claim 18 ;
(b) vaporizing said composition to form a precursor vapor; and
(c) contacting the substrate under chemical vapor deposition conditions with said precursor vapor to form said silicon-containing film.
25. The method of claim 24 , wherein said composition is vaporized at a temperature that is not higher than 300° C.
26. The method of claim 24 , wherein said composition is vaporized at a temperature that is not higher than 150° C.
27. The method of claim 24 , wherein said silicon-containing film comprises silicon nitride.
28. A method of forming a silicon-containing film on a substrate, comprising the steps of:
(a) providing a composition as in claim 21 ;
(b) vaporizing said composition to form a precursor vapor; and
(c) contacting the substrate under chemical vapor deposition conditions with said precursor vapor to form said silicon-containing film.
29. The method of claim 28 , wherein said composition is vaporized at a temperature that is not higher than 300° C.
30. The method of claim 28 , wherein said composition is vaporized at a temperature that is not higher than 150° C.
31. The method of claim 28 , wherein said silicon-containing film comprises silicon nitride.