Method and system for detection of solid materials in a plasma using an electromagnetic circuit
View Patent ↗A method for solid material detection in a medium includes receiving an exhaust gas downstream with respect to a workpiece from which a photoresist material is removed. An electromagnetic circuit is configured to include the exhaust gas, the exhaust gas is excited with electromagnetic energy and an impedance value of the electromagnetic circuit is determined, wherein the impedance value corresponds to an amount of solid material within the exhaust gas.
1. A material detection system, comprising:
a plasma processing chamber configured to uniformly convey plasma onto a surface of a work-piece contained therein;
a flow path in fluid communication with and downstream from the processing chamber, the flow path configured to contain a medium of interest transported to and from the plasma processing chamber, wherein the medium of interest contains a solid material, and/or a gaseous byproduct, or combinations thereof removed from the work-piece;
a volatilizing electromagnetic energy source downstream from the plasma processing chamber coupled to the flow path for exciting said medium of interest so as to volatize the solid material downstream from the process chamber within the flow path when present; and
an impedance measuring device for measuring an impedance value of an electromagnetic circuit, said electromagnetic circuit including said flow path therein, wherein said impedance value corresponds to an amount of solid material within said medium of interest.
2. The material detection system of claim 1 , wherein said electro-magnetic circuit further comprises at least one of a microwave circuit and a radio frequency (RF) circuit.
3. The material detection system of claim 1 , wherein said impedance measuring device is configured to determine an impedance magnitude value and an impedance phase value.
4. The material detection system of claim 3 , further comprising a mechanism for determining variations of said impedance magnitude and phase values over time.
5. The material detection system of claim 1 , wherein the electromagnetic energy source is configured to provide a high power and a low power duty cycle, wherein the high power duty cycle is effective to volatize the solid material, and wherein the impedance measuring device is configured to be operative during the low power duty cycle.
6. A plasma based semiconductor material removal system, comprising:
a plasma processing chamber configured to uniformly convey plasma onto a surface of a work-piece contained therein;
a volatilizing electromagnetic energy source coupled to an effluent carrying conduit downstream from a plasma processing chamber, wherein the volatilizing electromagnetic energy source is configured to cause excitation of a gas having reactive species therein, wherein the excited gas may include a solid material a gaseous byproduct, and combinations thereof removed from a semiconductor work-piece, and wherein the excitation is effective to volatize the solid material downstream from the process chamber within the effluent carrying conduit when present;
a mechanism for uniformly conveying the excited gas; and
an impedance measuring device for measuring an impedance value of an electromagnetic circuit, said electromagnetic circuit including said excited gas therein, wherein said impedance value corresponds to an amount of the solid material within said gas.
7. The system of claim 6 , wherein said electromagnetic circuit further comprises at least one of a microwave circuit and a radio frequency (RF) circuit.
8. The system of 6 , wherein said downstream electromagnetic energy source is configured to excite said medium of interest into a microwave plasma.
9. The system of claim 6 , wherein said impedance measuring device is configured to determine an impedance magnitude value and an impedance phase value.
10. The system of claim 9 , further comprising a mechanism for determining variations of said impedance magnitude and phase values over time.
11. The system of claim 9 , wherein said downstream electromagnetic energy source is configured to apply power at a power level of about 200 watts (W) to about 400 W.
12. The system of claim 9 , wherein said downstream electromagnetic energy source is configured to apply power at a power level of about 300 watts (W).
13. The system of claim 6 , wherein said impedance measuring device is configured for facilitating endpoint detection of removal of a photoresist material.
14. The plasma based semiconductor material removal system of claim 6 , wherein the electromagnetic energy source is configured to provide a high power and a low power duty cycle, wherein the high power duty cycle is effective to volatize the solid material, and wherein the impedance measuring device is configured to be operative during the low power duty cycle.