Circuit device manufacturing method
View Patent ↗A circuit device manufacturing method is provided, wherein the adhesion of an overcoat resin, formed on a conductive wiring layer, to a sealing resin layer is improved by irradiating plasma onto the overcoat resin. A first conductive film 23 A and a second conductive film 23 B, which are laminated with an interlayer insulating layer 22 interposed in between, are formed. By selectively removing the first conductive film, a first conductive wiring layer 12 A is formed and the first conductive wiring layer is covered with an overcoat resin 18 . Overcoat resin 18 is irradiated with plasma to roughen its top surface. A sealing resin layer 17 is formed so as to cover the top surface of the roughened overcoat resin 18 and circuit elements 13.
1. A circuit device manufacturing method comprising:
forming conductive films that are laminated in multiple layers with interlayer insulating layers interposed in between;
forming a first conductive wiring layer by selective removal of the conductive film at a top surface;
forming through holes in the interlayer insulating layers and forming connection means in the through holes to electrically connect the first conductive wiring layer with the conductive film at a rear surface;
affixing a circuit element to the first conductive wiring layer and electrically connecting the circuit element to the first conductive wiring layer via conductive wires;
irradiating plasma onto the first conductive wiring layer, the circuit element and the conductive wires; and
forming a resin layer so as to cover the circuit element; and
forming a second conductive wiring layer by selective removal of the conductive film at the rear surface after the irradiation.
2. The method of claim 1 , wherein the conductive wiring layer is covered with resin while exposing locations that are to become pads.
3. The method of claim 2 , wherein in the step of irradiating plasma, the plasma is irradiated onto a top surface of the resin as well to roughen the top surface of the resin while a voltage, which is charged up in the resin, is released from the conductive wiring layer and via the conductive films.
4. The method of claim 1 , wherein connection means, comprising a plating film, are formed in the through holes to electrically connect the conductive wiring layer and the conductive film.
5. The method of claim 1 , wherein the plasma irradiation is carried out using oxygen gas or ozone.
6. The method of claim 1 , wherein the plasma irradiation is carried out using an inert gas, such as argon, neon, or helium.
7. The method of claim 6 , wherein in the process of irradiating the plasma using argon, ion energy of argon is in a range of 40 eV to 100 eV.
8. The method of claim 1 , wherein the plasma irradiation includes using an oxygen gas and wherein, after performing the plasma irradiation using oxygen gas, plasma irradiation using an inert gas, such as argon, neon, or helium, is carried out.
9. The method of claim 1 , wherein the conductive film is formed of a metal having copper as a principal material.
10. The method of claim 1 , wherein the circuit element is semiconductor element that is electrically connected via metal wires to the conductive wiring layer.
11. The method of claim 1 , wherein the circuit element is semiconductor element that is mounted in a face-down manner.
12. The method of claim 11 , wherein the circuit element is electrically connected to the conductive wiring layer via soft solder or other solder material.
13. The method of claim 1 wherein the first conductive wiring layer is covered by overcoat resin.