Circuit device manufacturing method including mounting circuit elements on a conductive foil, forming separation grooves in the foil, and etching the rear of the foil
View Patent ↗A circuit device manufacturing method is provided, wherein contaminants attached to the top surfaces of conductive patterns 21 are removed using plasma to thereby improve the adhesion of conductive patterns 21 to a sealing resin 28 . By selective etching of a conductive foil 10 , separation grooves 11 are formed, thereby forming conductive patterns 21 . A semiconductor element 22 A and other circuit elements are mounted onto desired locations of conductive patterns 21 and electrically connected with conductive patterns 21 . By irradiating plasma onto conductive foil 10 from above, contaminants attached to the surfaces of separation grooves 11 are removed.
1. A circuit device manufacturing method comprising:
forming separation grooves in a conductive foil from a top surface to form conductive patterns that are integrally connected at the bottom portion of the conductive foil;
mounting a circuit element onto one or more of the conductive patterns;
sealing with a resin layer so as to cover the circuit element and fill the separation grooves; and
covering a portion of the resin layer, which is exposed from intervals separating the conductive patterns, with a resist,
wherein plasma is irradiated onto the top surface of the conductive foil, and
wherein a rear surface of the conductive foil is eliminated until the resin layer is exposed at the rear surface of the conductive foil to electrically separate the respective conductive patterns, and
wherein contaminants attached to side surfaces of the separation grooves are removed by ions reflected by the side surfaces.
2. A circuit device manufacturing method comprising:
forming separation grooves in a conductive foil from a top surface to form conductive patterns that are integrally connected at the bottom portion of the conductive foil;
mounting a circuit element onto one or more of the conductive patterns;
irradiating plasma onto the top surface of the conductive foil, including the circuit element;
sealing with a resin layer so as to cover the circuit element and fill the separation grooves; and
covering a portion of the resin layer, which is exposed from intervals separating the conductive patterns, with a resist,
wherein a rear surface of the conductive foil is eliminated until the resin layer is exposed at the rear surface of the conductive foil to electrically separate the respective conductive patterns, and
wherein contaminants attached to side surfaces of the separation grooves are removed by ions reflected by the side surfaces.
3. The method of claim 1 , wherein irradiation of the plasma is carried out prior to the step of mounting the circuit element.
4. The method of claim 1 , wherein irradiation of the plasma is carried out subsequent to the step of mounting the circuit element.
5. The method of claim 1 or 2 , wherein contaminants attached to the surfaces of the separation grooves are removed by the plasma.
6. The method of claim 5 , wherein the contaminants comprise organic or inorganic matter.
7. The method of claim 1 or 2 , wherein the surface of the separation grooves are roughened by the plasma irradiation.
8. The method of claim 1 or 2 , wherein the surface of the separation grooves are oxidized by the plasma irradiation.
9. The method of claim 1 or 2 , wherein the plasma irradiation is carried out using oxygen gas.
10. The method of claim 1 or 2 , wherein the plasma irradiation is carried out using an inert gas.
11. The method of claim 1 or 2 , wherein the conductive foil is formed of a metal having copper as the principal material.
12. The method of claim 1 or 2 , wherein the circuit element comprises a semiconductor element that is electrically connected to one or more of the conductive patterns via metal wires.
13. The method of claim 1 wherein the separation grooves extend only partially through the conductive foil.