IP Library Granted Patent US 7,012,484
Granted Patent B2
US 7,012,484 · App. 10/831,318 · Granted Mar 14, 2006

Filter using multilayer ceramic technology and structure thereof

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Quick Facts
Patent No.
US 7,012,484
App. No.
10/831,318
Granted
Mar 14, 2006
Kind
B2
Abstract

The present invention discloses a filter using multilayer ceramic technology. The filter comprises an input port, an output port, a first lumped resonator and a first step-impedance resonator connected to the input port, a second lumped resonator and a second step-impedance resonator connected to the output port, a coupling capacitor used for the coupling of the first lumped resonator and the first step-impedance resonator to the second lumped resonator and the second step-impedance resonator. The filter according to the present invention can provide the multi-transmission zeros in the stopband to isolate the adjacent channel and suppress the harmonics, and provide the transmission poles in the passband to have lower insertion loss. In addition, a manufacturing method for the filter using multilayer ceramic technology is also disclosed.

Claims (38)

1. A filter circuit comprising:

an input port;

an output port;

a first lumped resonator, electrically connected to the input port;

a second lumped resonator, electrically connected to the output port;

a first step-impedance resonator, electrically connected to the input port;

a second step-impedance resonator, electrically connected to the output port; and

a coupling capacitor, used for the coupling of the first lumped resonator and the first step-impedance resonator to the second lumped resonator and the second step-impedance resonator;

wherein the first lumped resonator comprises a first capacitor and a first inductor, and the second lumped resonator comprises a second capacitor and a second inductor.

2. A filter circuit as claimed in claim 1 , wherein a first transmission zero is generated when the first lumped resonator resonates at its self-resonant frequency and a second transmission zero is generated when the second lumped resonator resonates at its self-resonant frequency.

3. A filter circuit as claimed in claim 1 , wherein a third transmission zero is generated when the first step-impedance resonator resonates at its self-resonant frequency and a fourth transmission zero is generated when the second step-impedance resonator resonates at its self-resonant frequency.

4. A filter circuit as claimed in claim 1 , wherein the self-resonant frequency of the first lumped resonator is higher than the self-resonant frequency of the first step-impedance resonator.

5. A filter circuit as claimed in claim 1 , wherein the self-resonant frequency of the first lumped resonator is lower than the self-resonant frequency of the first step-impedance resonator.

6. A filter circuit as claimed in claim 1 , wherein the self-resonant frequency of the second lumped resonator is higher than the self-resonant frequency of the second step-impedance resonator.

7. A filter circuit as claimed in claim 1 , wherein the self-resonant frequency of the second lumped resonator is lower than the self-resonant frequency of the second step-impedance resonator.

8. A filter circuit as claimed in claim 1 , wherein the first lumped resonator and the first step-impedance resonator can form a first parallel circuit to provide a first transmission pole.

9. A filter circuit as claimed in claim 1 , wherein the second lumped resonator and the second step-impedance resonator can form a second parallel resonant tank to provide a second transmission pole.

10. A filter circuit as claimed in claim 8 , wherein the first parallel circuit and the coupling capacitor can provide a third transmission pole to reduce the insertion loss.

11. A filter circuit as claimed in claim 9 , wherein the second parallel circuit and the coupling capacitor can provide a fourth transmission pole to reduce the insertion loss.

12. A filter circuit as claimed in claim 1 , wherein the characteristic impendence ratios of the first step-impedance resonator and the second step-impedance resonator vary smoothly.

13. A filter circuit as claimed in claim 1 , wherein the parasitic ground capacitance of the coupling capacitor can be absorbed by the first step-impedance resonator and the second step-impedance resonator, and therefore the practical length of the first step-impedance resonator and the second step-impedance resonator are shorter than one quarter wavelength of the operating frequency.

14. A filter structure, comprising:

a top ground plane;

an input electrode;

an output electrode;

a first coupling capacitive layer, positioned below the top ground plane, having a first metal piece, one side of the first metal piece connected to the input electrode;

a second coupling capacitance layer, positioned below the first coupling capacitive layer, having a second metal piece, one side of the second metal piece connected to the output electrode;

an inductance layer, having a third metal piece and a fourth metal piece, one side of the third metal piece connected to the input electrode to form the lumped inductor and one side of the fourth metal piece connected to the output electrode to form the lumped inductor;

a capacitance layer, having a fifth metal piece and a sixth metal piece, one side of the fifth metal piece connected to the third metal piece and formed as the lumped capacitor, and one side of the sixth metal piece connected to the fourth metal piece and formed as the lumped capacitor;

a middle ground plane, positioned below the capacitance layer;

a step-impedance layer, positioned below the middle layer, having a seventh metal piece and an eighth metal piece, one side of the seventh metal piece connected to the input electrode and one side of the eighth metal piece connected to the output electrode; and

a bottom ground plane, positioned below the step-impedance layer.

15. A filter structure as claimed in claim 14 , wherein the filter structure is fabricated by the thick film technology.

16. A filter structure as claimed in claim 14 , wherein the third metal piece and the fourth metal piece on the inductance layer can be three-dimensional to form the lumped inductor.

17. A filter structure as claimed in claim 14 , wherein the fifth metal piece and the sixth metal piece on the capacitance layer can be inter-digital or three-dimensional of metal-insulator-metal to form the capacitor.

18. A filter structure as claimed in claim 14 , wherein the third metal piece on the inductance layer and the fifth metal piece on the capacitance layer are in self series-resonance to provide a first transmission zero and the fourth metal piece on the inductance layer and the sixth metal piece on the capacitance layer are in self series-resonance to provide a second transmission zero.

19. A filter structure as claimed in claim 14 , wherein the seventh metal piece and the eighth metal piece on the step impedance layer are formed by the transmission line of high impedance and low impedance.

20. A filter structure as claimed in claim 14 , wherein the parasitic ground capacitance of the first coupling capacitance layer and the second coupling capacitance layer can be absorbed by the seventh metal piece and the eighth metal piece on the step-impedance layer, and therefore the practical length of the seventh metal piece and the eighth metal piece are shorter than one quarter wavelength of the operating frequency.

Assignments (19)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 059666/0545 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: MICROCHIP TECHNOLOGY INCORPORATED
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0617 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2015
From: MICROCHIP TECHNOLOGY (BARBADOS) II INCORPORATED
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 036631/0442 →
MERGER Recorded Sep 6, 2015
From: ISSC TECHNOLOGIES CORP.
To: MICROCHIP TECHNOLOGY (BARBADOS) II INCORPORATED
Reel/Frame 036561/0892 →
CHANGE OF NAME Recorded Jul 13, 2010
From: INTEGRATED SYSTEM SOLUTION CORP.
To: ISSC TECHNOLOGIES CORP.
Reel/Frame 024675/0495 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2005
From: CHANG, SHENG-FUH
To: INTEGRATED SYSTEM SOLUTION CORP.; CHANG, SHENG-FUH
Reel/Frame 016585/0196 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2004
From: JENG, YNG-HUEY
To: CHANG, SHENG-FU
Reel/Frame 015264/0747 →