Temperature compensated on-chip bias circuit for linear RF HBT power amplifiers
View Patent ↗An RF amplifier is disclosed having a first and second current mirror module. The first and second current mirror modules each provide current to affect the quiescent bias current of the RF amplifier.
1. A device comprising:
a radio frequency amplifier comprising a RF input, a bias node, and a RF output;
a first current mirror module comprising a first bias node coupled to the bias node;
a second current mirror module comprising a first bias node coupled to the first bias node of the first current mirror module; and
a mode control module comprising a first bias node coupled to a second bias node of the first current mirror module, and a second bias node coupled to a second bias node of the second current mirror module, and an input to receive a signal indicating one of a high power state and a low-power state.
2. The device of claim 1 , wherein the second current mirror module further comprises a single p-n junction current mirror.
3. The device of claim 2 , wherein the single p-n junction current mirror further comprises a transistor having a first current node, a second current node, and a control node coupled to the first current node.
4. The device of claim 3 , wherein the first current mirror comprises
a first transistor comprising a first current electrode, a second current electrode coupled to the first bias node of the first current mirror, and a control node;
a second transistor comprising a first current electrode coupled to the control node of the first transistor, a second current electrode, and a control electrode coupled to the second current electrode of the first transistor.
5. The device of claim 4 , wherein the second current electrode of the first transistor is connected to the first bias node.
6. The device of claim 5 wherein the second bias node of the of the first current module is coupled to the first current node of the second transistor.
7. The device of claim 5 wherein the second bias node of the of the second current module is coupled to the first current node of the transistor of the single rectifier.
8. The device of claim 7 wherein the mode control module further comprises a first transistor comprising a first current electrode coupled to the first bias node of the mode control module, a second current electrode, and a control node.
9. The device of claim 8 wherein the mode control module further comprises a second transistor comprising a first current electrode coupled to the second bias node of the mode control module, a second current electrode, and a control node coupled to the control node of the first transistor of the mode control module.
10. A method comprising the steps of:
facilitating generation of a first portion of a control node bias current at a first current source, where a slope of a quiescent current versus temperature attributed to the first portion of the control node bias current has a first polarity; and
facilitating generation a second portion of the control node bias current at a second current source, where a slope of a quiescent current versus temperature attributed to the second portion of the control node bias current has a second polarity opposite the first polarity.
11. The method of claim 10 further comprising:
selecting a mode of operation, wherein a magnitude of the node bias current is based upon the mode of operation.
12. A method comprising the steps of:
providing to a base of an RF amplifier, a first bias current to generate a collector current at the RF amplifier that varies by less than a first rate with respect to temperature when operating within a first temperature range; and
providing to the base of the RF amplifier, a second bias current to generate a collector current at the RF amplifier that varies by greater than a second rate with respect to temperature when operating within a second temperature range, a minimum value of the second rate with respect to the second temperature range being larger than a maximum value of the first temperature range.
13. The method of claim 12 , wherein a maximum temperature of the first 30 degree temperature range is less than 20 degrees Celsius.
14. The method of claim 13 , wherein a minimum temperature of the second 30 degree temperature range is greater than 20 degrees Celsius.
15. The method of claim 14 , wherein the first rate with respect to temperature is 1 milliamp per 7 degrees Celsius.
16. The method of claim 12 , wherein the first rate with respect to temperature is 1 milliamp per 7 degrees Celsius.
17. The method of claim 12 , wherein a minimum temperature of the second 30 degree temperature range is greater than 20 degrees Celsius.
18. The method of claim 12 further comprising:
providing a mode indicator, wherein a magnitude of the first bias current and a magnitude of the second bias current are based on the mode indicator.
19. A device comprising:
an input matching module comprising a first input node to receive an RF signal, and an output;
a first stage power amplifier comprising:
a radio frequency amplifier comprising a RF input, a bias node coupled to the output of the input matching module, and a RF output;
a first current mirror module comprising a first bias node coupled to the bias node; and
a second current mirror module comprising a first bias node coupled to the first bias node of the first current mirror module;
an interstage matching module comprising an input coupled to the RF output of the first stage amplifier, and an output; and
a second stage power amplifier comprising:
a radio frequency amplifier comprising a RF input, a bias node coupled to the output of the interstage matching module, and a RF output;
a first current mirror module comprising a first bias node coupled to the bias node; and
a second current mirror module comprising a fast bias node coupled to the first bias node of the first current mirror module.
20. The device of claim 19 , wherein the device is an RF base station transceiver further comprising a system control module coupled to the first and second stage power amplifiers.
21. The device of claim 19 , wherein the device is an RF mobile transceiver further comprising a system control module coupled to the fast and second stage power amplifiers.