Method and apparatus utilizing monocrystalline insulator
View Patent ↗A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element and substantially lattice matched to the semiconductor material.
1. An integrated circuit having a voltage variable capacitor, the circuit including:
a first semiconductor layer;
a second semiconductor layer formed on the first semiconductor layer including a material having a higher resistivity than the first semiconductor layer;
a conductive electrode; and
an insulating layer formed between the second semiconductor layer and the electrode, the insulating layer including a substantially monocrystalline layer
wherein the monocrystalline layer is substantially lattice matched to at least one of the first semiconductor layer and the second semiconductor layer.
2. An integrated circuit according to claim 1 , wherein the monocrystalline layer includes at least one of a metal oxide, metal nitride, alkaline earth metal titanate, alkaline earth metal zirconate, alkaline earth metal hafnate, alkaline earth metal tantalate, alkaline earth metal niobate, alkaline earth metal vanadate, alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide, alkaline earth oxides, gallium nitride, aluminum nitride, boron nitride, strontium titanate, BaTiO 3 , LaAlO 3 , SrZrO 3 , BaZrO 3 , and MgO.
3. An integrated circuit according to claim 1 , wherein a structure of the monocrystalline layer is rotated approximately 45 degrees with respect to a structure of the at least one of the first semiconductor layer and the second semiconductor layer.
4. An integrated circuit according to claim 1 , wherein the insulating layer is formed epitaxially.
5. An integrated circuit according to claim 1 , further including an interface layer disposed between the insulating layer and the second semiconductor layer.
6. An integrated circuit according to claim 5 , wherein the interface layer includes at least one of a metal oxide, metal nitride, gallium nitride, aluminum nitride, boron nitride, strontium silicate, and strontium oxide.
7. A semiconductor device, including:
a semiconductor material;
a conductive element; and
a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element
wherein the insulator is substantially lattice matched to the semiconductor material, and wherein the semiconductor device includes a capacitor,
wherein said device further includes a high-resistivity layer disposed between the insulator and the semiconductor material.
8. A semiconductor device according to claim 7 , wherein the semiconductor material includes a silicon substrate.
9. A semiconductor device according to claim 7 , wherein the high-resistivity layer is an epitaxial layer.
10. A semiconductor device according to claim 7 , wherein the semiconductor device includes a capacitor.
11. A semiconductor device according to claim 7 , wherein the semiconductor device includes a voltage variable capacitor.
12. A semiconductor device according to claim 7 , wherein the insulator is formed epitaxially.
13. A semiconductor device, including:
a semiconductor material;
a conductive element; and
a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element
wherein the insulator is substantially lattice matched to the semiconductor material, and wherein the insulator includes at least one of a metal oxide, metal nitride, alkaline earth metal titanate, alkaline earth metal zirconate, alkaline earth metal hafnate, alkaline earth metal tantalate, alkaline earth metal niobate, alkaline earth metal vanadate, alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide, alkaline earth oxides, gallium nitride, aluminum nitride, boron nitride, strontium titanate, BaTiO 3 , LaAlO 3 , SrZrO 3 , BaZrO 3 , and MgO.
14. A semiconductor device according to claim 13 , wherein the insulator includes strontium titanate.
15. A semiconductor device according to claim 13 , wherein the structure of the insulator is rotated approximately 45 degrees with respect to the structure of the semiconductor material.
16. A semiconductor device, including:
a semiconductor material;
a conductive element; and
a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element
wherein the insulator is substantially lattice matched to the semiconductor material, the semiconductor device further including an interface layer disposed between the insulator and the semiconductor material,
wherein the interface layer includes at least one of a metal oxide, metal nitride, gallium nitride, aluminum nitride, boron nitride, strontium silicate, and strontium oxide.
17. A radio circuit having a frequency dependent circuit, the frequency dependent circuit including at least one voltage variable capacitor, and the voltage variable capacitor including:
a semiconductor substrate;
a high resistivity semiconductor layer on the semiconductor substrate;
a substantially monocrystalline dielectric layer formed on the high resistivity layer; and
an electrode formed on the dielectric layer
wherein the dielectric layer is substantially lattice matched to the high resistivity semiconductor layer.
18. A radio circuit according to claim 17 , wherein the dielectric layer includes at least one of a metal oxide, metal nitride, alkaline earth metal titanate, alkaline earth metal zirconate, alkaline earth metal hafnate, alkaline earth metal tantalate, alkaline earth metal niobate, alkaline earth metal vanadate, alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide, alkaline earth oxides, gallium nitride, aluminum nitride, boron nitride, strontium titanate, BaTiO 3 , LaAlO 3 , SrZrO 3 , BaZrO 3 , and MgO.
19. A radio circuit according to claim 17 , wherein the structure of the dielectric layer is rotated approximately 45 degrees with respect to the structure of the high resistivity semiconductor layer.
20. A radio circuit according to claim 17 , wherein the dielectric layer includes strontium titanate.
21. A radio circuit according to claim 17 , further including an interface layer disposed between the dielectric layer and the semiconductor substrate.
22. A radio circuit according to claim 21 , wherein the interface layer includes at least one of a metal oxide, metal nitride, gallium nitride, aluminum nitride, boron nitride, strontium silicate, and strontium oxide.
23. A voltage variable thin film capacitor, comprising;
a first semiconductor layer;
a second semiconductor layer of a higher resistivity semiconductive material formed on the first semiconductor layer;
an insulating layer formed on the second semiconductor layer comprising a thin film of substantially monocrystalline material; and
a conductive electrode formed on the insulating layer
wherein the structure of the monocrystalline material is substantially lattice matched to at least one of the first or second semiconductor layer.
24. A voltage variable thin film capacitor according to claim 23 , wherein the monocrystalline material comprises at least one of a metal oxide, metal nitride, alkaline earth metal titanate, alkaline earth metal zirconate, alkaline earth metal hafnate, alkaline earth metal tantalate, alkaline earth metal niobate, alkaline earth metal vanadate, alkaline earth metal tin-based perovskite, lanthanum aluminate, lanthanum scandium oxide, gadolinium oxide, alkaline earth oxides, gallium nitride, aluminum nitride, boron nitride, strontium titanate, BaTiO 3 , LaAlO 3 , SrZrO 3 , BaZrO 3 , and MgO.
25. A voltage variable thin film capacitor according to claim 23 , wherein the structure of the monocrystalline material is rotated approximately 45 degrees with respect to the structure of the at least one of the first or second semiconductor layer.
26. A voltage variable thin film capacitor according to claim 23 , wherein the insulating layer is formed epitaxially.
27. A voltage variable thin film capacitor according to claim 23 , further including an interface layer disposed between the insulating layer and the second semiconductor layer.
28. A voltage variable thin film capacitor according to claim 27 , wherein the interface layer is comprised of at least one of a metal oxide, metal nitride, gallium nitride, aluminum nitride, boron nitride, strontium silicate, and strontium oxide.