Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
View Patent ↗Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.
1. A silicon compound of the formula
wherein R 1 , R 2 and R 3 may be the same as or different from the other and each is independently selected from the group consisting of H, C 1 -C 5 alkyl, C 3 -C 6 cycloalkyl, aryl and arylalkyl; and
X 1 , X 2 , Y 1 , and Y 2 may be the same as or different from the other and each is independently selected from the group consisting of H, alkyl, alkylamino, dialkylamino and alkylhydrazido; with the proviso that when each of R 3 is H, and each of R 1 , X 1 , X 2 , Y 1 , and Y 2 is methyl, then both R 2 are not H or methyl.
2. The silicon compound of claim 1 of the formula (Me 2 NNMe)Me 2 Si—SiMe 2 (MeNNMe 2 ).