Semiconductor device having no cracks in one or more layers underlying a metal line layer and method of manufacturing the same
A semiconductor device and a method of manufacturing the same which yields high reliability and a high manufacturing yield. The semiconductor device includes a metal line layer having a plurality of metal line patterns spaced apart from each other, and at least one underlying layer under the metal line layer, wherein the space between two adjacent metal line patterns has a sufficient width to prevent a crack from occurring in one or more of the underlying layers. The cracking of an underlying layer may also be prevented by providing a slit in a direction parallel to the space between two adjacent metal line patterns at a sufficient distance from the space between the two adjacent metal line patterns.
1. A method of manufacturing a semiconductor device having a multi-layered structure, comprising:
forming at least one underlying layer on a substrate; and
forming a metal line layer on the underlying layer, the metal line layer having at least two adjacent metal line patterns having a space between them to be spaced apart from each other and having a predetermined width and length, each of the two adjacent metal line patterns having a slit having a width corresponding to the predetermined width and length of the two adjacent metal line patterns; and
forming each slit by patterning a portion of the metal line layer adjacent to the space between the at least two adjacent metal line patterns concurrently with patterning the metal line layer to prevent a crack from occurring in the underlying layer in the space.
2. The method as claimed in claim 1 , wherein each slit is formed in a direction parallel to the space.
3. The method as claimed in claim 1 , wherein the width of each slit is greater than 1.0 μm.
4. The method as claimed in claim 1 , wherein each slit is formed at a predetermined distance from an edge of the metal line pattern.
5. The method as claimed in claim 1 , wherein the adjacent metal line patterns are spaced more than 1.5 μm apart from each other.
6. The method as claimed in claim 1 , wherein a distance between each slit and the space corresponds to the predetermined width and length of the two adjacent metal line patterns.
7. The method as claimed in claim 3 , wherein the distance between each slit and the space is less than 4.0 μm.
8. The method as claimed in claim 1 , wherein the predetermined width and length of the two adjacent metal line patterns is greater than 30 μm.
9. A method of manufacturing a semiconductor device, comprising:
forming at least one underlying layer on a substrate; and
forming a metal line layer on the underlying layer, the metal line layer having a plurality of metal line patterns adjacent to each other, having a space between them to be spaced apart from each other and having a predetermined width and length, wherein each of the plurality of adjacent metal line patterns has a slit formed at a distance from the space and having a width corresponding to the predetermined width and length of the plurality of adjacent metal line patterns; and
forming each slit by patterning a portion of the metal line layer adjacent to the space between the plurality of metal line patterns adjacent to each other concurrently with patterning the metal line layer to prevent a crack from occurring in the underlying layer in the space.
10. The method as claimed in claim 9 , wherein each slit is formed in parallel to the space.
11. The method as claimed in claim 9 , wherein the width of each slit is greater than 1.0 μm.
12. The method as claimed in claim 9 , wherein each slit is formed at a predetermined distance from an edge of the metal line pattern.
13. The method as claimed in claim 9 , wherein the adjacent metal line patterns are spaced more than 1.5 μm apart from each other.
14. The method as claimed in claim 9 , wherein a distance between each slit and the space corresponds to the predetermined width and length of the adjacent metal line patterns.
15. The method as claimed in claim 14 , wherein the distance between each slit and the space is less than 4.0 μm.
16. The method as claimed in claim 9 , wherein the predetermined width and length of the adjacent metal line patterns is greater than 30 μm.