Barrier-metal-free copper damascene technology using atomic hydrogen enhanced reflow
View Patent ↗A method for forming conductive contacts and interconnects in a semiconductor structure, and the resulting conductive components are provided. In particular, the method is used to fabricate single or dual damascene copper contacts and interconnects in integrated circuits such as memory devices and microprocessor.
1. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to transform a thickness of the insulating layer to a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
2. A method of forming an interconnect, comprising the steps of:
exposing a surface of an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending from the surface into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
3. A method of forming an interconnect, comprising the steps of:
converting a portion of an insulating layer to a non-metal diffusion barrier layer by exposing a surface of the insulating layer to a nitrogen-containing plasma, the barrier layer extending from the surface into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
4. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
5. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer to a depth of about 5–10 nm;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
6. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to dope nitrogen into the insulating layer to form a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
7. A method of forming an interconnect, comprising the steps of:
doping nitrogen into the insulating layer to form a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
8. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal nitride diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
9. A method of forming an interconnect, comprising the steps of:
nitriding a surface of an insulating layer to a depth effective to form a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
10. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
directionally depositing a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
11. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
sputtering a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
12. A method of forming an interconnect, comprising the steps of;
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
depositing a layer of conductive material over the diffusion barrier layer by ionized magnetron sputtering; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
13. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
depositing a layer of conductive material over the diffusion barrier layer by evaporation; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
14. A method of forming an interconnect, comprising the steps of:
nitriding a surface of an insulating layer to a depth effective to form a non-metal diffusion barrier layer;
forming a layer of copper-comprising material over the diffusion barrier layer; and
reflowing the copper-comprising material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
15. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of copper-comprising material over the diffusion barrier layer; and
reflowing the copper-comprising material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen.
16. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
17. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer;
exposing the conductive material layer to a high density krypton/hydrogen plasma at a temperature of less than about 400° C. to reflow the conductive material layer.
18. A method of forming an interconnect, comprising the steps of:
exposing an insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer;
generating atomic hydrogen by microwave excitation of Kr/H 2 ; and
exposing the conductive material layer to the atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
19. A method of forming an interconnect, comprising the steps of:
exposing an silicon oxyfluoride layer to a nitrogen-containing plasma to form a silicon oxynitride diffusion barrier layer extending into the silicon oxyfluoride layer;
forming a layer of conductive material over the silicon oxynitride diffusion barrier layer; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
20. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
forming a layer of conductive material over the diffusion barrier layer within the opening; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
21. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating material layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
forming a layer of conductive material over the diffusion barrier layer within the opening; and
reflowing the conductive material layer in atomic hydrogen at a temperature of less than about 400° C.
22. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating material layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
directionally depositing a conductive material over the diffusion barrier layer within the opening; and
reflowing the conductive material layer in atomic hydrogen at a temperature of less than about 400° C.
23. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating material layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
sputter depositing a conductive material over the diffusion barrier layer within the opening; and
reflowing the conductive material layer in atomic hydrogen at a temperature of less than about 400° C.
24. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating material layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
depositing a conductive material over the barrier layer by ionized magnetron sputtering; and
reflowing the conductive material layer in atomic hydrogen at a temperature of less than about 400° C.
25. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
exposing the insulating material layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
depositing a layer of conductive material over the diffusion barrier layer by evaporation; and
reflowing the conductive material layer in atomic hydrogen at a temperature of less than about 400° C.
26. A method of forming a conductive contact in an opening in an insulating material layer, the opening having an aspect ratio of about 3:1 or greater, the method comprising the steps of:
exposing the insulating layer to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the opening;
forming a layer of conductive material over the diffusion barrier layer within the opening; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
27. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
transforming a thickness of the insulating layer within the opening to a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer within the opening; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
28. A method of forming a conductive contact in an opening in an insulating material layer, comprising the steps of:
transforming a thickness of the insulating layer within the opening to a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer within the opening; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer to form a substantially voidless contact within the opening.
29. A method of forming an interconnect structure, comprising the steps of:
exposing an insulating layer comprising a trench and a contact via extending from the trench, to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the trench and the contact via;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer.
30. The method of claim 29 , wherein the contact via extends to a conductive element.
31. A method of forming an interconnect structure, comprising the steps of:
exposing an insulating layer comprising a trench and a contact via extending from the trench, to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer within the trench and the contact via;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer to form a substantially voidless fill within the trench and the contact via.
32. A method of forming an interconnect structure, comprising the steps of:
nitriding a surface of an insulating layer comprising a trench and a contact via extending from the trench, to form a non-metal diffusion barrier layer extending into the insulating layer within the trench and the contact via;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer and form a substantially voidless fill within the trench and the contact via.
33. A method of forming an interconnect structure, comprising the steps of:
etching a dual damascene trench and contact via in an insulating material layer;
nitriding a surface of the insulating material layer within the trench and contact via to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer and form a substantially voidless fill within the trench and the contact via.
34. A method of forming an interconnect structure, comprising the steps of:
etching a dual damascene trench and contact via in an insulating material layer;
nitriding a surface of the insulating material layer within the trench and contact via to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer and form a substantially voidless fill within the trench and the contact via.
35. A method of forming an interconnect structure, comprising the steps of:
etching a dual damascene trench and contact via in an insulating material layer;
exposing the insulating layer within the trench and contact via to a nitrogen-containing plasma to form a non-metal diffusion barrier layer extending into the insulating layer;
forming a layer of conductive material over the diffusion barrier layer within the trench and the contact via; and
exposing the conductive material layer to atomic hydrogen at a temperature of less than about 400° C. to reflow the conductive material layer and form a substantially voidless fill within the trench and the contact via.
36. A method of forming an interlayer interconnect, comprising the steps of:
exposing an interlayer dielectric layer comprising a contact via extending to a conductive component to a nitrogen-containing plasma to transform a thickness of the insulating layer within the contact via to a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen to form a substantially voidless fill in the contact via.
37. A method of forming an interlayer interconnect, comprising the steps of:
exposing an interlayer dielectric layer comprising a trench and contact via extending from the trench to a nitrogen-containing plasma to transform a thickness of the insulating layer within the trench and the contact via to a non-metal diffusion barrier layer;
forming a layer of conductive material over the diffusion barrier layer; and
reflowing the conductive material layer at a temperature of less than about 400° C. in the presence of atomic hydrogen to form a substantially voidless fill in the trench and the contact via.
38. The method of claim 37 , wherein the contact via extends to a conductive component.