Memory bit line segment isolation
View Patent ↗A single memory array ( 10 ) has an isolation circuit for isolating segments of a same bit line (Seg 1 BL 0 , Seg 2 BL 0 ) from each other. The isolation circuit ( 16 ) permits memory cells located in one segment ( 12 ) of an array to be read while memory cells of another segment ( 14 ) of the array are being erased. In one example, the isolation circuit ( 16 ) electrically couples the segments during a read or program of memory cells located on the second segment (Seg 2 BL 0 ). Program information stored in the single memory array may always be accessed while a portion of the same array is erased. Dynamic variation of the size of the isolated bit line segment occurs when multiple isolation circuits are used to create more than two array segments.
1. A memory comprising:
a bit line including a first segment and a second segment;
a first memory cell located on the first segment;
a second memory cell located on the second segment; and
an isolation circuit, the first segment selectively coupled to the second segment via the isolation circuit, the isolation circuit decoupling the first segment and the second segment when the second memory cell is being erased and the first memory cell is being read, and coupling the first segment and the second segment when the second memory cell is being read.
2. The memory of claim 1 further comprising:
a shared sense amplifier for use by both the first segment and the second segment, wherein the first memory cell is read by the sense amplifier and the second memory cell is read by the sense amplifier.
3. The memory of claim 2 wherein the second memory cell is read by the sense amplifier via the first segment and the isolation circuit.
4. The memory of claim 1 wherein the isolation circuit comprises a switch having a first circuit terminal coupled to the first segment and a second circuit terminal coupled to the second segment.
5. The memory of claim 4 wherein the switch comprises a CMOS transfer gate.
6. The memory of claim 1 wherein the first memory cell and the second memory cell are characterized as non volatile memory cells.
7. The memory of claim 1 wherein the first memory cell and the second memory cell comprise flash memory cells.
8. The memory of claim 1 wherein the first segment is electrically coupled to the second segment via the isolation circuit when the second memory cell is being programmed.
9. The memory of claim 1 further comprising:
a first plurality of memory cells located on the first segment, each of the first plurality of memory cells is located on a separate word line; and
a second plurality of memory cells located on the second segment, each of the second plurality of memory cells is located on a separate word line.
10. The memory of claim 1 wherein the bit line includes a third segment, the memory further comprising:
a third memory cell located on the third segment; and
a second isolation circuit, the third segment is selectively coupled to the second segment via the second isolation circuit.
11. The memory of claim 10 wherein the second segment is electrically coupled to the third segment via the second isolation circuit when the third memory cell is being read.
12. The memory of claim 10 wherein the second isolation circuit isolates the third segment from the second segment when one of the second memory cell or the first memory cell is being read and the third memory cell is being erased.
13. A method of operating a memory, the memory including a bit line, the bit line including a first segment and a second segment, the memory including a first memory cell located on the first segment and a second memory cell located on the second segment, the method comprising:
electrically isolating the first segment from the second segment;
erasing the second memory cell with the first segment being isolated from the second segment;
reading the first memory cell during the erasing; and
electrically coupling the first segment to the second segment for reading the second memory cell.
14. The method of claim 13 wherein the first memory cell and the second memory cell comprise non volatile memory cells.
15. The method of claim 14 wherein the first memory cell and the second memory cell comprise flash memory cells.
16. The method of claim 13 further comprising:
transitioning a switch between conductive and non-conductive states to isolate the first segment from the second segment depending upon a mode of operation of the memory, wherein the switch comprises a first circuit terminal coupled to the first segment and a second circuit terminal coupled to the second segment.
17. The method of claim 16 wherein the switch comprises a CMOS transfer gate.
18. The method of claim 16 further comprising:
programming the second memory cell during a time when the first segment is electrically coupled to the second segment.
19. The method of claim 16 further comprising:
reading the first memory cell during a time when the first segment is electrically coupled to the second segment.
20. The method of claim 16 further comprising:
biasing the second segment to a D.C. voltage when the second segment is electrically isolated from the first segment.
21. A memory comprising:
a bit line comprising a first segment and a second segment;
a first plurality of memory cells located on the first segment;
a second plurality of memory cells located on the second segment; and
means for isolating the first segment from the second segment when any memory cell of the second plurality of memory cells is being erased and a memory cell of the first plurality of memory cells is being read, and for electrically coupling the first segment to the second segment when any memory cell of the second plurality of memory cells is being read.
22. The memory of claim 21 wherein the first plurality of memory cells and the second plurality of memory cells comprise non volatile memory cells.
23. The memory of claim 21 wherein the first plurality of memory cells and the second plurality of memory cells comprise flash memory cells.
24. A memory comprising:
a bit line comprising a first segment and a second segment;
a first plurality of memory cells located on the first segment;
a second plurality of memory cells located on the second segment;
a sense amplifier coupled to the bit line, the sense amplifier functioning for both the first segment and the second segment of the bit line; and
an isolation circuit, the first segment being selectively coupled to the second segment via the isolation circuit, wherein the isolation circuit isolates the first segment from the second segment when any memory cell of the second plurality is being erased and a memory cell of the first plurality is being read, wherein the first segment is electrically coupled to the second segment via the isolation circuit when any memory cell of the second plurality is being read.