Semiconductor devices having a pocket line and methods of fabricating the same
View Patent ↗In one embodiment, a semiconductor device comprises an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface. A molding hole is placed in the semiconductor substrate on the active region. A pocket insulating layer pattern conformally covers the molding hole. A pocket line extends across the active region, filling the molding hole and protruding from the main surface of the semiconductor substrate. The pocket line includes a pocket conductive layer line, a lower metal layer line, and an upper metal layer line, which are sequentially stacked on the pocket insulating later pattern. The device further may further include a line capping layer pattern placed on the pocket line. The line capping layer pattern and the pocket conductive layer line may surround the lower and upper metal layer lines.
1. A semiconductor device comprising:
an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface;
a molding hole placed in the semiconductor substrate on the active region;
a pocket insulating layer pattern conformally covering the molding hole;
a pocket line extending across the active region, filling the molding hole and protruding from the main surface of the semiconductor substrate, the pocket line including a pocket conductive layer line, a lower metal layer line, and an upper metal layer line, which are sequentially stacked on the pocket insulating later pattern; and
a line capping layer pattern placed on the pocket line, wherein the line capping layer pattern and the pocket conductive layer line surround the lower and upper metal layer lines.
2. The semiconductor device according to claim 1 , wherein the molding hole comprises a trench hole.
3. The semiconductor device according to claim 1 , wherein the pocket insulating layer pattern comprises a silicon oxide (SiO 2 ) layer.
4. The semiconductor device according to claim 1 , wherein the pocket insulating layer pattern comprises a silicon nitride oxide (Si x N y O z ) layer.
5. The semiconductor device according to claim 1 , wherein the lower and upper metal layer lines each comprise a metal having a high melting point.
6. The semiconductor device according to claim 1 , wherein the lower and upper metal layer lines comprise a tungsten nitride (WN) layer and a tungsten (W) layer respectively.
7. The semiconductor device according to claim 1 , wherein a width of the pocket line protruding from the main surface of the semiconductor substrate is greater than a diameter of the molding hole.
8. The semiconductor device according to claim 1 , wherein a width of the pocket line protruding from the main surface of the semiconductor substrate is less than a diameter of the molding hole.
9. The semiconductor device according to claim 1 , wherein top surfaces of the lower and upper metal layer lines are placed higher than the main surface of the semiconductor substrate.
10. The semiconductor device according to claim 1 , wherein the lower and upper metal layer lines are placed in the molding hole on the active region.
11. A semiconductor device comprising:
an active region isolated by a device isolation layer placed in a semiconductor substrate having a main surface;
a molding hole placed in the semiconductor substrate on the active region;
a pocket insulating layer pattern conformally covering the molding hole; and
a pocket line extending across the active region, filling the molding hole and protruding from the main surface of the semiconductor substrate, the pocket line including a pocket conductive layer line, a lower metal layer line, and an upper metal layer line, which are sequentially stacked on the pocket insulating later pattern,
wherein the pocket conductive layer line approximately surrounds the lower and upper metal layer lines to prevent oxidation thereof.