CMOS image sensor and manufacturing method thereof
View Patent ↗A CMOS image sensor according to the present invention includes a substrate having a light receiving region, an interlayer insulating film formed on the substrate, a plurality of metal wirings formed on the interlayer insulating film so as to expose the light receiving region, a protection layer coated on the metal wirings and the interlayer insulating film, and a plurality of color filters formed on the protection layer, wherein at least one of the color filters is provided with an isolation layer formed on an upper surface thereof.
1. A method for manufacturing a CMOS image sensor comprising:
forming an interlayer insulating film on a substrate having a light receiving region;
forming a plurality of metal wirings so as to expose the light receiving region on the interlayer insulating film between the metal wirings;
forming a protection layer on the metal wirings and the interlayer insulating film;
forming a first color filter on the protection layer;
forming a first isolation layer on the first color filter and the protection layer; and
forming a second color filter on the first isolation layer;
forming a second isolation layer on the second color filter and the first isolation layer;
forming a third color filter on the second isolation layer; and
forming a third isolation layer on the third color filter.
2. The method of claim 1 , further comprising exposing a pad part of the metal wirings after forming the third isolation layer.
3. The method of claim 1 , wherein forming the first to third isolation layers comprises a chemical vapor deposition technique or spin coating technique.
4. The method of claim 3 , wherein forming a first one of the first to third color filters comprises a blue color filter, a second one of the first to third color filters comprises a red color filter, and a third one of the first to third color filters comprises a green color filter.
5. The method of claim 4 , wherein the first color filter comprises a blue color filter, the second color filter comprises a red color filter, and the third color filter comprises a green color filter.
6. The method of claim 1 , further comprising forming a field oxide layer and a transistor gate electrode on the substrate.
7. The method of claim 6 , wherein the substrate comprises a semiconductor substrate.
8. The method of claim 1 , wherein each of the first to third isolation layers independently comprises a thermal oxide layer, a silicon nitride layer, a TEOS layer, a silicon oxide layer, or a silicon oxide nitride layer.
9. The method of claim 1 , wherein each or the first to third isolation layers independently has a thickness in a range of 50˜3000 Å.
10. The method of claim 1 , wherein the first isolation layer is formed such that it is between the first color filter and the second color filter.
11. A method for manufacturing a CMOS image sensor comprising:
forming an interlayer dielectric layer on a substrate having a light receiving region;
forming a plurality of metal wirings so as to expose the light receiving region on the interlayer dielectric layer between the metal wirings;
forming a protection layer on the metal wirings and the interlayer dielectric layer;
forming a first color filter an the protection layer;
forming a first isolation layer on the first color filter and the protection layer;
forming a second color filter on the first isolation layer;
forming a third color filter on the first isolation layer; and
forming a second isolation layer on the second color filter, the third color filter, and the first isolation layer.
12. The method of claim 11 , further comprising exposing a pad part of the metal wirings after forming the second isolation layer.
13. The method of claim 11 , wherein forming each of the first and second isolation layers comprises a chemical vapor deposition technique or spin coating technique.
14. The method of claim 11 , wherein forming a first one of the first to third color filters comprises a blue color filter, a second one of the first to third color filters comprises a red color filter, and a third one of the first to third color filters comprises a green color filter.
15. The method of claim 14 , wherein the first color filter comprises a blue color filter, the second color filter layer comprises a red color filter, and the third color filter comprises a green color filter.
16. The method of claim 11 , further comprising forming a field oxide layer and a transistor gate electrode on the substrate.
17. The method of claim 16 , wherein the substrate comprises a semiconductor substrate.
18. The method of claim 11 , wherein each of the first and second isolation layers independently comprises a thermal oxide layer, a silicon nitride layer, a TEOS layer, a silicon oxide layer, or a silicon oxide nitride layer.
19. The method of claim 11 , wherein each of the first and second isolation layers independently has a thickness in a range of 50˜3000 Å.
20. The method of claim 11 , wherein the first isolation layer is formed such that it is between the first color filter and each of the second and third color filters.