Method for fabricating semiconductor device
View Patent ↗The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.
1. A method for fabricating a semiconductor device, comprising:
forming an inter metal dielectric on a semiconductor substrate having wirings; and
planarizing the inter metal dielectric through a chemical mechanical polishing,
wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.
2. The method of claim 1 , wherein the polycrystalline silicon is deposited at a thickness in the range of 100˜1000Å through PECVD process.
3. The method of claim 2 , wherein the polycrystalline silicon is formed at a temperature in the range of 350˜450° C. under pressure below 5 mtorr.
4. The method of claim 1 , wherein the polycrystalline silicon is formed using SiCl 2 or SiCl 2 H 2 gas as source gas.
5. The method of claim 1 , wherein the plasma-processing is carried out using one of He, Ar and He as plasma gas.
6. The method of claim 1 , wherein the inter metal dielectric is formed 1.5˜2.5 times thicker than the wirings.
7. The method of claim 1 , wherein the plasma processing removes hydrogen and carbon in the polycrystalline silicon.