IP Library Granted Patent US 7,176,733
Granted Patent B2
US 7,176,733 · App. 11/009,534 · Granted Feb 13, 2007

High output impedance charge pump for PLL/DLL

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Quick Facts
Patent No.
US 7,176,733
App. No.
11/009,534
Granted
Feb 13, 2007
Kind
B2
Abstract

A charge pump for use in a Phase Locked Loop/Delay Locked Loop minimizes static phase error through the use of an operational amplifier. The operational amplifier also mitigates the effects of low power supply voltage.

Claims (27)

1. A charge pump comprising:

a pull-up circuit which supplies a pull-up current to increase voltage at a charge pump output;

a pull-down circuit which supplies a pull-down current to decrease voltage at the charge pump output;

an operational amplifier having a first input and a second input, the first input coupled to the charge pump output and the second input coupled to a drain of a transistor that supplies current to the pull-down circuit, the operational amplifier output coupled to the pull-down circuit and the gate of the transistor, the operational amplifier adjusting a voltage level at the operational amplifier output dependent on a voltage difference between the inputs to minimize the voltage difference between the inputs and decrease the difference between the pull-down current and the pull-up current; and

a startup circuit coupled to the first input which sets the voltage at the first input to a voltage level below a power supply voltage during power-up of the charge pump.

2. The charge pump of claim 1 wherein the power supply voltage supplied to the charge pump is about one volt.

3. The charge pump of claim 1 wherein the pull-up circuit includes a first PMOS device and a second PMOS device, the drain of the first PMOS device coupled to the source of the second PMOS device, the source of the first PMOS device coupled to the power supply voltage node and the drain of the second PMOS device coupled to the charge pump output, the pull-up circuit supplying pull-up current while the first PMOS device is on.

4. The charge pump of claim 1 wherein the pull-down circuit includes a first NMOS device and a second NMOS device, the drain of the first NMOS device coupled to the source of the second NMOS device, the source of the first NMOS device coupled to ground and the drain of the second NMOS device coupled to the charge pump output, the pull-down circuit supplying pull-down current while the first NMOS device is on.

5. The charge pump of claim 1 further comprising:

a reference current source which supplies current to the pull-down circuit and the pull-up circuit.

6. A charge pump comprising:

a pull-up circuit which supplies a pull-up current to increase voltage at a charge pump output;

a pull-down circuit which supplies a pull-down current to decrease voltage at the charge pump output;

an operational amplifier having a first input and a second input, the first input coupled to the charge pump output and the second input coupled to a drain of a transistor that supplies current to the pull-down circuit, the operational amplifier output coupled to the pull-down circuit and the gate of the transistor, the operational amplifier adjusting a voltage level at the operational amplifier output dependent on a voltage difference between the inputs to minimize the voltage difference between the inputs and decrease the difference between the pull-down current and the pull-up current; and

a reference current source which supplies current to the pull-down circuit and the pull-up circuit wherein the reference current source includes a programmable array of transistors.

7. The charge pump of claim 1 wherein the operational amplifier has an input range from rail to rail and an output range from rail to rail.

8. A method for minimizing offset current in a charge pump comprising:

supplying a pull-down current and a pull-up current to modify a voltage at a charge pump output;

coupling a first input of an operational amplifier to the charge pump output;

coupling a second input of the operational amplifier to a drain of a transistor that supplies current to a pull-down circuit,

coupling the operational amplifier output to the pull-down circuit and the gate of the transistor;

setting the voltage at the first input to a voltage level below a power supply voltage during power-up of the charge pump; and

adjusting the voltage level at the operational amplifier output dependent on the voltage difference between the second input and the first input to minimize the voltage difference between the inputs and decrease the difference between the pull-up current and the pull-down current.

9. The method of claim 8 wherein the power supply voltage is about one volt.

10. The charge pump of claim 6 wherein the pull-up circuit includes a first PMOS device and a second PMOS device, the drain of the first PMOS device coupled to the source of the second PMOS device, the source of the first PMOS device coupled to a power supply voltage node and the drain of the second PMOS device coupled to the charge pump output, the pull-up circuit supplying pull-up current while the first PMOS device is on.

11. The charge pump of claim 6 wherein the pull-down circuit includes a first NMOS device and a second NMOS device, the drain of the first NMOS device coupled to the source of the second NMOS device, the source of the first NMOS device coupled to ground and the drain of the second NMOS device coupled to the charge pump output, the pull-down circuit supplying pull-down current while the first NMOS device is on.

12. The charge pump of claim 6 wherein the operational amplifier has an input range from rail to rail and an output range from rail to rail.

Assignments (12)
CORRECTIVE ASSIGNMENT TO CORRECT THE CONVEYING PARTY'S NAME PREVIOUSLY RECORDED AT REEL: 057449 FRAME: 0393. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded Aug 30, 2023
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 064761/0404 →
CHANGE OF NAME Recorded Sep 9, 2021
From: CONVERSANT INTELLECTUAL PROPERTY INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 057449/0393 →
RELEASE OF SECURITY INTEREST Recorded Nov 2, 2020
From: CPPIB CREDIT INVESTMENTS INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 054279/0198 →
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
CHANGE OF ADDRESS Recorded Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
RELEASE OF SECURITY INTEREST Recorded Aug 7, 2014
From: ROYAL BANK OF CANADA
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.; CONVERSANT IP N.B. 868 INC.; CONVERSANT IP N.B. 276 INC.
Reel/Frame 033484/0344 →
CHANGE OF NAME Recorded Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →
U.S. INTELLECTUAL PROPERTY SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) - SHORT FORM Recorded Jan 10, 2012
From: 658276 N.B. LTD.; 658868 N.B. INC.; MOSAID TECHNOLOGIES INCORPORATED
To: ROYAL BANK OF CANADA
Reel/Frame 027512/0196 →
CHANGE OF ADDRESS OF ASSIGNEE Recorded Apr 15, 2009
From: MOSAID TECHNOLOGIES INCORPORATED
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 022542/0876 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 5, 2005
From: HAERLE, DIETER
To: MOSAID TECHNOLOGIES, INC.
Reel/Frame 016014/0453 →