IP Library Granted Patent US 7,218,167
Granted Patent B2
US 7,218,167 · App. 11/062,888 · Granted May 15, 2007

Electric reference voltage generating device of improved accuracy and corresponding electronic integrated circuit

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Quick Facts
Patent No.
US 7,218,167
App. No.
11/062,888
Granted
May 15, 2007
Kind
B2
Abstract

The present invention relates to a device for generation of a reference electrical voltage. The device includes a first current generator outputting a current proportional to temperature. The first current generator comprises at least one operational amplifier and two branches in parallel, a first branch comprising a first current source and a first bipolar transistor, and a second branch comprising a second current source, a first resistance and a second bipolar transistor. A second current generator outputs a current conversely proportional to temperature. The device includes means of summating the currents so as to obtain a voltage independent of the said temperature, and means of reducing dependence of the current circulating in the said first branch on the value of the said first resistance. The reduction means comprises at least one second resistance with a non-adjustable value.

Claims (23)

1. Device for generation of a reference electrical voltage comprising:

a first current generator outputting a current proportional to temperature, wherein the said first current generator comprises at least one operational amplifier and two branches in parallel, a first branch comprising a first current source and a first bipolar transistor, and a second branch comprising a second current source, a first resistance and a second bipolar transistor;

a second current generator outputting a current conversely proportional to temperature;

means of summating the said currents so as to obtain a voltage independent of the said temperature; and

means of reducing dependence of the current circulating in the said first branch on the value of the said first resistance, the said reduction means comprising at least one second resistance with a non-adjustable value and mounted in series between the said second current source and a power supply of said device.

2. Generation device according to claim 1 , wherein the said reduction means act so as to increase the current circulating in the said first branch when the resistivity of the said first resistance is higher than a reference value, or to reduce this current when the resistivity of the said first resistance is smaller than said reference value.

3. Generation device according to claim 1 , wherein the said second resistance is chosen such that the ratio of the said currents proportional and conversely proportional to the temperature remain within a predetermined interval of values when the value of the said first resistance varies.

4. Generation device according to claim 1 , wherein the said first and second resistances are made using the same technology, so that they have the same behavior as a function of variations in operating conditions of the said device.

5. Generation device according to claim 4 , wherein the said first and second resistances are polysilicon resistances made on the same wafer.

6. Integrated electronic circuit comprising a device for generation of a reference electrical voltage comprising:

a first current generator outputting a current proportional to the temperature and comprising at least one operational amplifier and two branches in parallel, including a first branch comprising a first current source and a first bipolar transistor, and a second branch comprising a second current source, a first resistance and a second bipolar transistor;

a second current generator outputting a current conversely proportional to the temperature;

means of summating the said currents so as to obtain a voltage independent of the said temperature; and

means of reducing dependence of the current circulating in the said first branch on the value of the said first resistance, the said reduction means comprising at least one second resistance with a non-adjustable value and mounted in series between the said second current source and a power supply of said device.

7. A device for generating a reference electrical voltage, the device comprising:

a first current generator outputting a current proportional to temperature, wherein the said first current generator comprises at least one operational amplifier and two branches in parallel, a first branch comprising a first current source and a first bipolar transistor, and a second branch comprising a second current source, a first resistance and a second bipolar transistor;

a second current generator outputting a current conversely proportional to temperature;

a summation circuit, which sums the said currents so as to obtain a voltage independent of the said temperature; and

a dependence reduction circuit comprising at least one second resistance with a non-adjustable value, which reduces dependence of the current circulating in the said first branch on the value of the said first resistance, and which is mounted in series between the second current source and a power supply of the device.

8. Generation device according to claim 7 , wherein the said dependence reduction circuit acts so as to increase the current circulating in the said first branch when the resistivity of the said first resistance is higher than a reference value, or to reduce this current when the resistivity of the said first resistance is smaller than said reference value.

9. Generation device according to claim 7 , wherein the said second resistance is chosen such that the ratio of the said currents proportional and conversely proportional to the temperature remain within a predetermined interval of values when the value of the said first resistance varies.

10. Generation device according to claim 7 , wherein the said first and second resistances are made using the same technology, so that they have the same behavior as a function of variations in operating conditions of the said device.

11. Generation device according to claim 10 , wherein the said first and second resistances are polysilicon resistances made on the same wafer.

Assignments (12)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 9, 2024
From: SONRAI MEMORY LIMITED
To: NERA INNOVATIONS LIMITED
Reel/Frame 066778/0178 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ATMEL CORPORATION
Reel/Frame 059262/0105 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2020
From: MICROCHIP TECHNOLOGY INC.; ATMEL CORPORATION; MICROSEMI CORPORATION
To: SONRAI MEMORY LIMITED
Reel/Frame 051799/0956 →
RELEASE OF SECURITY INTEREST Recorded Dec 21, 2019
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 051398/0809 →
RELEASE OF SECURITY INTEREST Recorded Dec 21, 2019
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; ATMEL CORPORATION
Reel/Frame 051398/0827 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: ATMEL CORPORATION
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041715/0747 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT COLLATERAL Recorded Apr 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: ATMEL CORPORATION
Reel/Frame 038376/0001 →
PATENT SECURITY AGREEMENT Recorded Jan 3, 2014
From: ATMEL CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC. AS ADMINISTRATIVE AGENT
Reel/Frame 031912/0173 →