Method for producing a structure on the surface of a substrate
View Patent ↗The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.
1. A method for producing a structure on a surface of a substrate, comprising:
forming a first partial structure on the surface of the substrate, which has first structure elements that are arranged regularly and spaced apart essentially identically, the first structure elements having a first width;
forming spacers on the surface of the substrate, which adjoin sidewalls of the first structure elements of the first partial structure, cutouts being provided between the spacers, the cutouts essentially having a width equal to the first width of the first structure elements and being formed in a center of the substrate between first structure elements respectively, the cutouts exposing the surface of the substrate;
introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered; and
removing the spacers in order to form a second partial structure of the filling material which has second structure elements that are arranged regularly and are spaced apart essentially identically, the second structure elements essentially having a width equal to the first width of the first structure elements, the structure to be produced being composed of the first partial structure and the second partial structure.
2. The method as claimed in claim 1 , wherein the forming spacers comprises applying a spacer layer in large area fashion on the surface of the substrate, which covers the structure elements of the first partial layer to form the spacers.
3. The method as claimed in claim 2 , wherein a part of the spacer layer is eroded or removed after application such that surfaces of the structure elements of the first partial structure are uncovered.
4. The method as claimed in claim 2 , the introduction of filling material comprises applying the filling material in large area fashion and subsequently removing or eroding the filling material such that the filling material remains within the cutouts provided between the spacers.
5. The method as claimed in claim 4 , the filling material being removed or eroded as far as a depth of the cutouts at which sidewalls of the spacers have a maximum inclination in a range of −10° to +10° with respect to a vertical.
6. The method as claimed in claim 4 , the filling material being a photoresist which is applied as a photoresist layer in large area fashion on the surface of the substrate and is exposed and developed for removal.
7. The method as claimed in claim 6 , the photoresist layer being exposed and developed in patterned fashion.
8. The method as claimed in claim 7 , the first partial structure on the surface of the substrate additionally having a large area structure element in a manner adjoining the structure elements that are arranged regularly and the patterned photoresist layer being used as an etching mask for patterning the large area structure element of the first partial structure before the spacers are removed.
9. The method as claimed in claim 1 , wherein the forming and removing spacers is repeated after the production of the structure on the surface of the substrate, the structure produced functioning as first partial structure.
10. A method for producing a structure on a surface of a substrate, comprising:
forming a first partial structure on the surface of the substrate, which has first structure elements that are arranged regularly and spaced apart essentially identically, the first structure elements having a first width;
forming spacers on the surface of the substrate, which adjoins sidewalls of the first structure elements of the first partial structure, cutouts being provided in the spacers, the cutouts essentially having a width equal to the first width of the first structure elements and being formed in a center of the substrate between first structure elements respectively, each spacer having two sidewall spacers and a web spacer in between connecting the sidewall spacer and form a lower end of the cutout;
introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered; and
removing the sidewall spacers by an anisotropic etching in order to form a second partial structure of the filling material and the web spacers which has second structure elements that are arranged regularly and are spaced apart essentially identically, the second structure elements essentially having a width equal to the first width of the first structure elements, the structure comprising the first partial structure and the second partial structure.
11. The method as claimed in claim 10 , wherein the forming spacers comprises applying a spacer layer in large area fashion on the surfaces of the substrate, which covers the structure elements of the first partial layer to form the spacers.
12. The method as claimed in claim 11 , wherein a part of the spacer layer is eroded or removed after application such that surfaces of the structure elements of the first partial structure are uncovered.
13. The method as claimed in claim 11 , the introduction of filling material comprises applying the filling material in large area fashion and subsequently removing or eroding the filling material such that the filling material remains within the cutouts provided between the spacers.
14. The method as claimed in claim 13 , the filling material being removed or eroded as far as a depth of the cutouts at which sidewalls of the spacers have a maximum inclination in a range of −10° to +10° with respect to a vertical.
15. The method as claimed in claim 13 , the filling material being a photoresist which is applied as a photoresist layer in large area fashion on the surface of the substrate and is exposed and developed for removal.
16. The method as claimed in claim 15 , the photoresist layer being exposed and developed in patterned fashion.
17. The method as claimed in claim 16 , the first partial structure on the surface of the substrate additionally having a large area structure element in a manner adjoining the structure elements that are arranged regularly and the patterned photoresist layer being used as an etching mask for patterning the large area structure element of the first partial structure before the spacers are removed.
18. The method as claimed in claim 10 , wherein the forming and removing spacers is repeated after the production of the structure on the surface of the substrate, the structure produced functioning as first partial structure.