Semiconductor structure
View Patent ↗A semiconductor structure, for improving rectifier efficiency in passive backscatter transponders or backscatter remote sensors for use in high-frequency electromagnetic fields, is provided. The semiconductor structure has a dielectric layer on whose upper side is arranged a first electrically conductive layer, and a second electrically conductive layer that is spaced apart from the first electrically conductive layer and is arranged essentially below the first electrically conductive layer and is at least partially embedded in the dielectric layer. The dielectric layer has its lower side arranged on a semiconductor substrate of a first conductivity type within which is formed a more highly doped first zone of the first conductivity type which surrounds an even more highly doped second zone of the first conductivity type connected to a reference voltage. Whereby, the first zone can be arranged essentially completely under the first and second electrically conductive layers. In this way, interfering effects of parasitic circuit components can be reduced.
1. A semiconductor structure comprising:
a dielectric layer;
a first electrically conductive layer being provided on an upper side of the dielectric layer; and
a second electrically conductive layer that is spaced apart from the first electrically conductive layer and is arranged below the first electrically conductive layer and is at least partially embedded in the dielectric layer,
wherein the dielectric layer has a portion of a lower side thereof provided on a semiconductor substrate that has a first conductivity type,
wherein there is formed within the semiconductor substrate a highly doped first zone of the first conductivity type, the first zone partially encompassing a greater doped second zone having the first conductivity type, the second zone being connected to a reference voltage, and
wherein the entirety of the first zone is arranged under the first and second electrically conductive layers.
2. The semiconductor structure according to claim 1 , wherein a capacitor, which is formed by the first and second electrically conductive layers, is connected by the first electrically conductive layer to a subsequent stage of a multistage rectifier circuit and is connected by the second electrically conductive layer to a first stage of the multistage rectifier circuit.
3. The semiconductor structure according to claim 1 , wherein the first electrically conductive layer is formed by a receiving device of the semiconductor structure for receiving electromagnetic waves.
4. The semiconductor structure according to claim , wherein the first and second electrically conductive layers have a substantially horizontal plane and are parallel to one another.
5. The semiconductor structure according to claim 1 , further comprising at least one first layer having metallic properties is arranged in a junction region between the dielectric layer and the first zone and below the second electrically conductive layer, the at least one first layer being electrically connected to the second electrically conductive layer.
6. The semiconductor structure according to claim 1 , wherein the second electrically conductive layer has metallic properties and extends, at least in sections, into a junction region that is formed between the dielectric layer and the first zone that is below the second electrically conductive layer.
7. The semiconductor structure according to claim 1 , wherein there is formed in the semiconductor substrate a more highly doped third zone having a second conductivity type, the third zone partially surrounding an even more highly doped fourth zone having the second conductivity type, the fourth being connected to a reference voltage, and wherein the third zone is arranged under the first and second electrically conductive layers.
8. The semiconductor structure according to claim 7 , wherein at least one second layer having metallic properties is arranged in a junction region between the dielectric layer and the third zone that is below the second electrically conductive layer, the at least one second layer being electrically connected to the second electrically conductive layer.
9. The semiconductor structure according to claim 7 , wherein the second electrically conductive layer has metallic properties and extends, at least in sections, into a junction region formed between the dielectric layer and the third zone that is below the second electrically conductive layer.
10. The semiconductor structure according to one claim 1 , wherein, on the first electrically conductive layer, a deposit is formed of an electrically conductive material which projects above the upper side of the dielectric layer.
11. The semiconductor substrate according to claim 1 , wherein the semiconductor substrate is provided in a power supply circuit for an integrated circuit, a backscatter transponder, or a remote sensor.
12. The semiconductor substrate according to claim 1 , wherein the semiconductor substrate is provided in a circuit for detecting a strength of a received signal in a backscatter transponder or a remote sensor.
13. The semiconductor structure according to claim 1 , wherein the semiconductor structure increases rectifier efficiency in passive backscatter transponders or backscatter remote sensors that are used in high-frequency electromagnetic fields.
14. The semiconductor structure according to claim 2 , wherein the receiving device is an antenna of a transponder or remote sensor.
15. A transponder comprising:
a semiconductor substrate having a first conductivity type;
a dielectric layer, the dielectric layer having a lower surface adjacent to a portion of an upper surface of the semiconductor substrate;
a first electrically conductive layer being provided on an upper surface of the dielectric layer;
a second electrically conductive layer being provided in a portion of the dielectric layer such that the second electrically conductive layer is between the first electrically conductive layer and the semiconductor substrate, the second electrically conductive layer having first and second opposite edges;
a doped first zone of the first conductivity type being partially formed within the semiconductor substrate and projecting under said first and second opposite edges of the second electrically conductive layer; and
a doped second zone of the first conductivity type, the doped second zone being partially encompassed by the doped first zone, the doped second zone having a higher doping than the doped first zone.
16. The transponder according to claim 15 , wherein the transponder is a passive transponder.
17. The transponder according to claim 15 , wherein the second electrically conductive layer is provided between the doped first zone and the first electrically conductive layer.
18. The transponder according to claim 15 , wherein a portion of an upper surface of the doped first zone contacts a portion of a lower surface of the second electrically conductive layer.
19. The transponder according to claim 15 , wherein the first electrically conductive layer and the second electrically conductive layer are substantially parallel.
20. The transponder according to claim 15 , wherein the first electrically conductive layer and the second electrically conductive layer are electrically connected to a rectifier circuit or a multi-stage rectifier circuit.