Circuit device manufacturing method
View Patent ↗A circuit device manufacturing method is provided, wherein the adhesion of an overcoat resin, formed on a conductive wiring layer, to a sealing resin layer is improved by irradiating plasma onto the overcoat resin. A first conductive film 23 A and a second conductive film 23 B, which are laminated with an interlayer insulating layer 22 interposed in between, are formed. By selectively removing the first conductive film, a first conductive wiring layer 12 A is formed and the first conductive wiring layer is covered with an overcoat resin 18 . Overcoat resin 18 is irradiated with plasma to roughen its top surface. A sealing resin layer 17 is formed so as to cover the top surface of the roughened overcoat resin 18 and circuit elements 13.
1. A method of manufacturing a circuit device comprising:
preparing sheet that includes a first conductive wiring layer, an overcoat resin that covers the first conductive wiring layer selectively, so as to cover an edge of the first conductive wiring layer, and a plating film that covers the first conductive wiring layer exposed from an opening of the overcoat resin;
affixing a circuit element on the overcoat resin and electrically connecting the circuit element to the first conductive wiring layer via the plating film and conductive wires;
irradiating plasma onto the overcoat resin, the plating film, the conductive wires and the circuit element; and
forming a resin layer so as to cover the circuit element, the overcoat resin, the conductive wires and the plating film.
2. The method of claim 1 , wherein
in the step of irradiating plasma, the top surface of the overcoat resin is roughened.
3. The method of claim 1 , wherein the circuit element and the first conductive wiring layer are connected by a metal wire and wherein the irradiating plasma roughens a surface of the metal wire.
4. The method of claim 1 wherein affixing the circuit element is executed before irradiating plasma onto the overcoat resin.
5. The method of claim 1 wherein the overcoat resin is formed of a dry film.
6. A circuit device comprising
a first conductive wiring layer;
an overcoat resin that covers the first conductive wiring layer selectively so as to cover an edge of the first conductive wiring layer;
a plating film that covers the first conductive wiring layer exposed from an opening of the overcoat resin;
a circuit element which is affixed on the overcoat resin and electrically connected to the first conductive wiring layer via the plating film and conductive wires; and
a resin layer that covers the circuit element, the overcoat resin, the conductive wires and the plating film;
wherein irregularity is formed by irradiating plasma to roughen surfaces of the circuit element, the overcoat resin and the conductive wires.
7. The device of claim 6 wherein the overcoat resin is formed of a dry film.
8. A circuit device comprising
a first conductive wiring layer and a second conductive wiring layer that are laminated with an interlayer insulating layer interposed therebetween;
multilayer connection means connecting the first conductive wiring layer and the second conductive wiring layer at a desirable portion by penetrating the interlayer insulating layer;
an overcoat resin that covers the first conductive wiring layer selectively so as to cover an edge of the first conductive wiring layer;
a plating film that covers the first conductive wiring layer exposed from an opening of the overcoat resin;
a circuit element which is affixed on the overcoat resin and electrically connected to the first conductive wiring layer via the plating film and conductive wires; and
a resin layer that covers the circuit element, the overcoat resin, the conductive wires and the plating film;
wherein irregularity is formed by irradiating plasma to roughen surfaces of the circuit element, the overcoat resin and the conductive wires.
9. The device of claim 8 wherein the overcoat resin is formed of a dry film.