Method for improving the thermal characteristics of semiconductor memory cells
View Patent ↗A non-volatile, resistively switching memory cell includes a first electrode, a second electrode and a solid electrolyte, which is arranged such that it makes contact between the electrodes, and is composed of an amorphous or partially amorphous, non-oxidic matrix and a metal which is distributed in the amorphous or partially amorphous, non-oxidic matrix and whose cations migrate to the cathode in the amorphous or partially amorphous, non-oxidic matrix under the influence of an electrical voltage, wherein the solid electrolyte contains one or more further metallic materials for stabilization of the amorphous state of the matrix.
1. A non-volatile, resistively switching memory cell comprising:
a first electrode;
a second electrode; and
a solid electrolyte configured to make contact between the first electrode and the second electrode, wherein:
the solid electrolyte includes an at least partially amorphous, non-oxidic matrix and a first metallic material distributed in the matrix, the first metallic material having cations that, as part of a switching effect, migrate to a cathode in the matrix under the influence of an electrical voltage, and
the solid electrolyte contains aluminum for stabilization of an amorphous state of the matrix.
2. The memory cell of claim 1 , wherein the first electrode is composed of a metal which is involved in the switching effect and is contained in the solid electrolyte.
3. The memory cell of claim 1 , wherein the first electrode represents a chemical compound of the solid electrolyte.
4. The memory cell of claim 1 , wherein the first metallic material, which is involved in the switching effect, comprises one or more metals from a group consisting of silver, sodium, lithium, indium and tin, a chemical compound of silver such as Ag 2 S, Ag 2 Se or an Ag—Al—S— or Ag—Al—Se— compound.
5. The memory cell of claim 4 , wherein the chemical compound of silver is one of a group consisting of Ag 2 S, Ag 2 Se or an Ag—Al—S— or Ag—Al—Se— compound.
6. The memory cell of claim 1 , wherein the amorphous material of the solid electrolyte is a material from a group consisting of binary germanium sulfide compound, a germanium selenide compound, a silicon sulfide compound or a silicon selenide compound, or is a ternary or quaternary composition of Ge, Si, Se and S.
7. The memory cell of claim 6 , wherein the germanium sulfide compound corresponds to the formula Ge x S 1-x and the germanium selenide compound corresponds to the formula Ge x Se 1-x , in which x is in the range from 0.1 to 0.5.
8. The memory cell of claim 7 , wherein the germanium sulfide compound corresponds to the formula Ge x S 1-x and the germanium selenide compound corresponds to the formula Ge x S 1-x , in which x is 0.33.
9. The memory cell of claim 1 , wherein the second electrode comprises an electrically conductive, inert material.
10. The memory cell of claim 9 , wherein the second electrode is composed of a material which is selected from a group consisting of aluminum, tungsten, tantalum, titanium, conductive oxides, conductive nitrides, nickel or heavily doped n-type silicon, heavily doped p-type silicon, or compounds thereof.
11. A CBRAM memory cell comprising:
a first electrode;
a second electrode; and
a solid electrolyte configured to make contact between the first electrode and the second electrode, wherein:
the solid electrolyte includes an at least partially amorphous, non-oxidic matrix and a first metallic material distributed in the matrix, the first metallic material having cations that migrate to a cathode in the matrix under the influence of an electrical voltage, and
the solid electrolyte includes aluminum configured to provide stabilization of an amorphous state of the matrix.
12. The memory cell of claim 11 , wherein the first electrode is composed of a metal which is involved in a switching effect of the CBRAM and is contained in the solid electrolyte.
13. The memory cell of claim 11 , wherein the first electrode represents a chemical compound of the solid electrolyte.
14. The memory cell of claim 11 , wherein the amorphous, non-oxidic matrix of the solid electrolyte comprises a material from a group consisting of binary germanium sulfide compound, a germanium selenide compound, a silicon sulfide compound or a silicon selenide compound, or is a ternary or quatenary composition of Ge, Si, Se and S.
15. The memory cell of claim 14 , wherein the germanium sulfide compound corresponds to the formula Ge x S 1-x and the germanium selenide compound corresponds to the formula Ge x Se 1-x , in which x is in the range from 0.1 to 0.5.
16. The memory cell of claim 14 , wherein the germanium sulfide compound corresponds to the formula Ge x S 1-x and the germanium selenide compound corresponds to the formula Ge x Se 1-x , in which x is 0.33.
17. The memory cell of claim l 1 , wherein the second electrode comprises an electrically conductive, inert material.
18. The memory cell of claim 17 , wherein the second electrode comprises a material selected from a group consisting of aluminum, tungsten, tantalum, titanium, conductive oxides, conductive nitrides, nickel or heavily doped n-type silicon, heavily doped p-type silicon, or compounds thereof.
19. A non-volatile, resistively switching memory cell comprising:
a first electrode;
a second electrode; and
means for providing a solid electrolyte configured to make contact between the first electrode and the second electrode, the solid electrolyte comprising:
an at least partially amorphous, non-oxidic matrix,
a first metal distributed in the matrix and having cations that migrate to a cathode in the matrix under the influence of an electrical voltage, and
aluminum for stabilization of an amorphous state of the matrix.