Patent Assignment
Reel/Frame 023330/0771
Contribution Agreement (Relevant Parts; English Translation)
Recorded: 2009-10-06
Pages: 44
Assignor
INFINEON TECHNOLOGIES AG
Executed: 2006-04-25
Assignee
QIMONDA AG
GUSTAV-HEINEMANN-RING 212, 81639 MUNICH, GERMANY
Covered Properties
(31)
Electronic Structure
Current Sense Amplifier
Method for Connecting Circuit Devices
Connection of Integrated Circuits
Memory System and Process for Controlling a Memory Component to Achieve Different Kinds of Memory Characteristics on One and the Same Memory Component
Method for Forming Three-Dimensional Structures on a Substrate
Method for Fabricating a Semiconductor Memory Cell
Method for Manufacturing an Integrated Circuit Including an Electrolyte Material Layer
Resistively Switching Memory
Semiconductor Memory Component in Cross-Point Architecture
Method for Operating an Integrated Circuit Having a Resistivity Changing Memory Cell
Method for Producing Memory Having a Solid Electrolyte Material Region
Resistive Semiconductor Element Based on a Solid-State Ion Conductor
Method for Fabricating an Integrated Device Comprising a Structure with a Solid Electrolyte
A Memory Device Including Electrical Circuit Configured to Provide Reversible Bias Across the Pmc Memory Cell to Perform Erase and Write Functions
Memory Having Cbram Memory Cells and Method
Integrated Memory Arrangement Based on Resistive Memory Cells and Production Method
Memory Component with Memory Cells Having Changeable Resistance and Fabrication Method Therefor
Resistive Memory Arrangement
Method for Manufacturing a Cbram Semiconductor Memory
Method for Improving the Thermal Characteristics of Semiconductor Memory Cells
Pmc Memory Circuit and Method for Storing a Datum in a Pmc Memory Circuit
Integrated Semiconductor Memory with an Arrangement of Nonvolatile Memory Cells, and Method
Method for Fabricating a Resistive Memory
Resistive Memory Element with Shortened Erase Time
Solid Electrolyte Memory Element and Method for Fabricating Such a Memory Element
Memory Cell, Memory Device and Method for the Production Thereof
Integrated Circuit Including Resistivity Changing Memory Cells
Memory Cells with an Anode Comprising Intercalating Material and Metal Species Dispersed Therein
Cbram Cell and Cbram Array, and Method of Operating Thereof
Method for Fabricating a Solid Electrolyte Memory Device and Solid Electrolyte Memory Device
Related Assignments
(18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Sep 8, 2010
From: QIMONDA AG
To: ADESTO TECHNOLOGY CORPORATION
Reel/Frame 024953/0554 →
Security Agreement
Oct 8, 2012
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OPUS BANK
Reel/Frame 029090/0922 →
Security Agreement
Oct 7, 2013
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: BRIDGE BANK, NATIONAL ASSOCIATION
Reel/Frame 031371/0581 →
Release of Security Interest
Oct 15, 2013
From: OPUS BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 031414/0232 →
Assignment of Assignor's Interest
May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Security Interest
May 22, 2015
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OPUS BANK
Reel/Frame 035754/0580 →
Assignment of Assignor's Interest
Sep 30, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036723/0021 →
Assignment of Assignor's Interest
Oct 9, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036827/0885 →
Assignment of Assignor's Interest
Oct 15, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036873/0758 →
Assignment of Assignor's Interest
Oct 19, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036888/0745 →
Corrective Assignment to Correct the Patent 7105729 Previously Recorded at Reel: 036827 Frame: 0885. Assignor(S) Hereby Confirms the Assignment.
Jul 26, 2017
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 043336/0694 →
Release of Security Interest
Oct 3, 2017
From: WESTERN ALLIANCE BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 044219/0610 →
Security Interest
May 8, 2018
From: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
To: OBSIDIAN AGENCY SERVICES, INC., AS COLLATERAL AGENT
Reel/Frame 046105/0731 →
Release of Security Interest
May 9, 2019
From: OPUS BANK
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 049125/0970 →
Release of Security Interest
Sep 24, 2019
From: OBSIDIAN AGENCY SERVICES, INC., AS COLLATERAL AGENT
To: ADESTO TECHNOLOGIES CORPORATION; ARTEMIS ACQUISITION LLC
Reel/Frame 050480/0836 →
Release of Security Interest
Jul 12, 2022
From: VENTURE LENDING & LEASING IX, INC.; WTI FUND X, INC.
To: PARALLEL WIRELESS, INC.
Reel/Frame 060900/0022 →
Assignment of Assignor's Interest
Mar 16, 2023
From: RENESAS DESIGN US INC. (FORMERLY KNOWN AS DIALOG SEMICONDUCTOR US INC. AS SUCCESSOR-IN-INTEREST TO ADESTO TECHNOLOGIES CORPORATION AND ARTEMIS ACQUISITION, LLC)
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 062999/0839 →
Assignment of Assignor's Interest
Mar 20, 2023
From: RENESAS DESIGN US INC. (FORMERLY KNOWN AS DIALOG SEMICONDUCTOR US INC. AS SUCCESSOR-IN-INTEREST TO ADESTO TECHNOLOGIES CORPORATION AND ARTEMIS ACQUISITION, LLC)
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 063118/0352 →