Ion implantation beam angle calibration

1. A method of establishing a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, comprising:

directing a divergent ion beam toward a workpiece into which ions are to be selectively implanted;

determining an angle of a ray of the ion beam that provides a stream of ions substantially parallel to crystal planes of the workpiece; and

calibrating an ion implantation system with respect to the angle of the ray.

2. The method of claim 1 , further comprising:

reducing a bias applied to an electrode to allow the ion beam to diverge.

3. The method of claim 2 , where the electrode is curved.

4. The method of claim 1 , further comprising:

determining a location on the workpiece where a substantially minimum amount of damage has occurred to the crystal lattice structure of the workpiece to ascertain where ions are implanted substantially parallel to crystal planes of the workpiece.

5. The method of claim 4 , wherein a Therma-Probe metrology tool is used to determine the location on the workpiece.

6. The method of claim 4 , further comprising:

correlating the location on the workpiece where a substantially minimum amount of damage has occurred to the lattice structure to the angle of the ray.

7. The method of claim 6 , further comprising:

correlating the location on the workpiece where a small amount of damage has occurred to the lattice structure to a corresponding location on a profiler or position of a profiler, where the profiler facilitates determining the angle of the ray.

8. The method of claim 7 , further comprising:

placing a mask and a profiler in the path of the divergent ion beam such that one or more beamlets pass through slots in the mask and impinge upon the profiler; and

determining respective implantation angles of beamlets that impinge upon the profiler.

9. The method of claim 8 , wherein

the ray corresponds to a beamlet that impinges upon the location of the profiler or position of the profiler that corresponds to the location on the workpiece where a small amount of damage occurs to the lattice structure of the workpiece, and

the angle of the ray corresponds to the arctan of a distance (D) between the actual ending location of the beamlet and an expected ending location of the beamlet divided by the length (L) of separation between the mask and the profiler.

10. The method of claim 9 , where correlating the location on the workpiece to the profiler comprises:

determining a distance between

a position on the workpiece where a central axis of the ion beam would impact workpiece and

the location on the workpiece where a small amount of damage occurs to the lattice structure, and

correlating the distance to a corresponding measurement on the profiler.

11. The method of claim 1 , wherein calibrating the ion implantation system comprises:

setting a zero angle of the system to the determined angle of the ray.

12. The method of claim 1 , wherein channeling and shadowing effects are also considered in calibrating the system.

13. A method of establishing a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, comprising:

causing an ion beam to diverge by reducing a bias applied to a parallelizing electrode;

directing the divergent ion beam toward a workpiece into which ions are to be selectively implanted;

determining an angle of a ray of the divergent ion beam that provides a stream of ions substantially parallel to crystal planes of the workpiece; and

calibrating an ion implantation system with respect to the angle of the ray.

14. The method of claim 13 further comprising:

determining a location on the workpiece where a small amount of damage has occurred to the crystal lattice structure of the workpiece to ascertain where ions are implanted substantially parallel to crystal planes of the workpiece.

15. The method of claim 14 , further comprising:

correlating the location on the workpiece where a small amount of damage has occurred to the lattice structure to a corresponding location on a profiler or position of a profiler, where the profiler facilitates determining the angle of the ray.

16. The method of claim 15 , further comprising:

placing a mask and a profiler in the path of the divergent ion beam such that one or more beamlets pass through slots in the mask and impinge upon the profiler; and

determining respective implantation angles of beamlets that impinge upon the profiler.

17. The method of claim 16 , wherein

the ray corresponds to a beamlet that impinges upon the location of the profiler or position of the profiler that corresponds to the location on the workpiece where a small amount of damage occurs to the lattice structure of the workpiece, and

the angle of the ray corresponds to the arctan of a distance (D) between the actual ending location of the beamlet and an expected ending location of the beamlet divided by the length (L) of separation between the mask and the profiler.

18. The method of claim 17 , where correlating the location on the workpiece to the profiler comprises:

determining a distance between

a position on the workpiece where a central axis of the ion beam would impact workpiece and

the location on the workpiece where a small amount of damage occurs to the lattice structure, and

correlating the distance to a corresponding measurement on the profiler.

19. The method of claim 13 , wherein calibrating the ion implantation system comprises:

setting a zero angle of the system to the determined angle of the ray.

20. The method of claim 13 , wherein channeling and shadowing effects are also considered in calibrating the system.

21. The method of claim 13 , wherein calibrating the ion implantation system comprises:

implanting two wafers oriented at 180 degree rotation from each other, and averaging the position of the minima in damage to compensate for a small crystal cut error in the wafers, thus calibrating the system to an ideal, perfect crystal.