Power failure detection circuit with fast drop response
View Patent ↗A device is provided for resetting an integrated circuit generating a reset signal after a power supply voltage drop to a very low level has been detected. Such a device includes at least one control means, the state of which (conducting or non-conducting) is controlled by a control voltage equal to the difference between the power supply voltage and a predetermined offset voltage, such that if the control voltage is less than or equal to a threshold, the control means authorizes activation of the means for generating a reset signal.
1. A resetting device comprising:
detection means for detecting a drop in a power supply voltage received by the said device; and
means for generating a reset signal, activated after a drop in the said power supply voltage has been detected by the said detection means, wherein the said detection means comprise:
a first control means itself comprising a first transistor forming a first switch and cooperating with energy storing means included within the said detection means, the said first transistor comprising a control element on which a first control voltage is applied, which is equal to the difference between the said power supply voltage and a first predetermined offset voltage, such that:
if the said first control voltage is greater than a first threshold, the said first transistor is in a non-conducting state, in which the said first transistor authorizes storage of energy in the said storage means; and
if the said first control voltage is less than or equal to the said first threshold, the said first transistor is in a conducting state in which the said first transistor authorizes the said energy storage means to release the said energy, so as to activate the said generation means;
a second control means itself comprising a second transistor forming a second switch and cooperating with a first current source included within the said detection means, the said second transistor comprising a control element on which a second control voltage is applied, which is equal to the difference between the said power supply voltage and a second predetermined offset voltage, such that:
if the said second control voltage is greater than a second threshold, the said second transistor is in a conducting state, in which the said second transistor prevents a current generated by the said first current source from reaching the said generation means; and
if the said second control voltage is less than or equal to the said second threshold, the said second transistor is in a non-conducting state, in which the said second transistor directs the current generated by the said first current source to the said means for generating a reset signal, so as to activate the said generation means.
2. The resetting device according to claim 1 , wherein the said first threshold is equal to the difference between a determined voltage applied to a source of the said first transistor and a threshold voltage of the said first transistor.
3. The resetting device according to claim 1 , wherein the said first predetermined offset voltage, denoted VX 1 , is such that: 0≦VX 1 <VCCn −(VS-VT) where
VCCn is a nominal value of the said power supply voltage;
VT is a threshold voltage of the said first transistor; and
VS is a determined voltage applied to a source of the said first transistor.
4. The resetting device according to claim 1 , wherein the said energy storage means comprise a third transistor used as a filtering capacitance.
5. The resetting device according to claim 1 , wherein the said second threshold is equal to a threshold voltage of the said second transistor.
6. The resetting device according to claim 1 , wherein the said second predetermined offset voltage, denoted VX 2 , is such that:
0 ≦VX 2 <VCCn−VT,
where:
VCCn is a nominal value of the said power supply voltage; and
VT is a threshold voltage of the said second transistor.
7. The resetting device according to claim 1 , wherein the said first current source comprises a current mirror powered by the said power supply voltage.
8. The resetting device according to claim 1 , wherein the said second transistor comprises:
a gate forming the said control element of the second transistor;
a source connected to the ground; and
a drain connected to a mid-point between the said first current source and the said generation means.
9. The resetting device according to claim 1 , wherein the said first threshold is less than the said second threshold.
10. The resetting device according to any one of claims 1 , wherein the said detection means also comprise a third control means, itself comprising:
means for comparing a voltage proportional to the said power supply voltage (div) with a determined reference voltage (VBGP), the said comparison means generating a resultant voltage (VDIFF) that depends on the result of the comparison;
a fourth transistor forming a third switch and cooperating with a second current source, that may or may not be coincident with the said first current source, the said fourth transistor comprising a control element on which the said resultant voltage is applied, such that:
if the said resultant voltage (VDIFF) is greater than a third threshold, the said fourth transistor is in a conducting state, in which the said fourth transistor prevents a current generated by the said second current source from reaching the said generation means;
if the said resultant voltage (VDIFF) is less than or equal to the said third threshold, the said fourth transistor is in a non-conducting state, in which the said fourth transistor directs the current generated by the said second current source to the said means for generating a reset signal, so as to activate the said generation means.
11. The resetting device according to claim 10 , wherein the said second threshold is less than the said third threshold.
12. The resetting device according to claim 10 , wherein the said first threshold is less than the said third threshold.
13. The resetting device according to claim 10 , wherein the fourth transistor is mounted with respect to the second transistor such that the said second switch formed by the second transistor behaves like a master switch with respect to the third switch formed by the fourth transistor, such that if the second transistor is in the said non-conducting state, the said generation means are activated regardless of the state of the fourth transistor.
14. The resetting device according to any one of claims 10 , wherein the said fourth transistor comprises:
a gate forming the said control element of the fourth transistor;
a source connected to the drain of the second transistor; and
a drain connected to a mid-point between the said first current source and the said generation means.
15. An electronic circuit comprising the resetting device of claim 1 .