Chemical oxide removal of plasma damaged SiCOH low k dielectrics
View Patent ↗A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor structure comprising a dual damascene structure that has been treated by the method is disclosed.
1. A method, comprising:
depositing a mixture of gaseous hydrofluoric acid and ammonia gas onto a plasma induced damaged layer formed in a trench sidewall;
forming volatile reaction products from a chemical reaction between the plasma induced damaged layer and the deposited mixture of ammonia gas and gaseous hydrofluoric acid; and
removing the volatile reaction products with vacuum or a non-reactive flushing gas.
2. The method according to claim 1 , wherein a non-reactive diluent gas is used to dilute the mixture of gaseous hydrofluoric acid and ammonia gas.
3. The method according to claim 2 , wherein the non-reactive gas belongs to a group of gases comprising nitrogen, helium, neon, argon.
4. The method according to claim 1 , wherein the damaged layer is a low k dielectric material comprising organic siloxanes having a dielectric constant of less than 3.9.
5. The method according to claim 1 , wherein the mixture of gaseous hydrofluoric acid and ammonia gas has a stochiometric ratio comprising a range from 4:1 to 1:4 (HF:NH 3 ).
6. The method according to claim 2 , wherein the mixture of gaseous hydrofluoric acid, ammonia gas and the non-reactive diluent gas has a combined partial pressure of 1 to 20 millitorr.
7. The method according to claim 2 , wherein the non-reactive diluent gas is supplied at a flow between 0 and 400 cm 3 /min.
8. The method according to claim 1 , wherein the forming of volatile reaction products is accelerated by adjusting the temperature between ambient and 200° C.
9. The method according to claim 1 , wherein the removing of the volatile reaction products includes flushing with nitrogen.
10. The method according to claim 1 , wherein the removing of the volatile reaction products includes applying a vacuum.
11. A method for trimming a dual damascene, comprising
depositing a material generated from a dilute mixture of gaseous hydrofluoric acid and ammonia gas in a non-reactive diluent gas onto a trench of a dual damascene structure;
heating the dual damascene structure with the deposited material; and
flushing the dual damascene structure with a non-reactive flush gas to remove the material and chemically formed products.
12. The method according to claim 11 , wherein the trimming has a thickness between 1 and 25 nm.
13. The method according to claim 11 , wherein the dilute mixture of gaseous hydrofluoric acid and ammonia gas has a stochiometric ratio between 4:1 and 1:4 (HF:NH 3 ), and the non-reactive diluent gas is from a group comprising nitrogen, helium, neon, and argon.
14. The method according to claim 13 wherein the dilute mixture of hydrofluoric acid and ammonia gas has a partial pressure between 1 and 20 millitorr, preferably between 10 and 14 millitorr and the non-reactive diluent gas has a flow rate of 0 to 400 cm 3 /min, preferably 0 to 225 cm 3 /min.
15. The method according to claim 11 , wherein the heating of the dual damascene structure with the deposited material occurs between ambient and 200° C., preferably 150° C.
16. The method according to claim 11 , wherein the non-reactive flush gas is one of nitrogen, helium, neon, and argon.
17. A method according to claim 11 , wherein the flushing of the dual damascene structure is followed by applying a vacuum.
18. The method according to claim 1 , wherein the removing of the volatile reaction products is subsequent to the forming of volatile reaction products.
19. The method according to claim 11 , wherein the flushing the dual damascene structure with a non-reactive flush gas to remove the material and chemically formed products is subsequent to the heating the dual damascene structure with the deposited material.
20. The method according to claim 1 , further comprising etching the trench through a photoresist material.
21. The method according to claim 11 , further comprising etching the trench through a photoresist material.
22. The method according to claim 1 , wherein the depositing occurs through a photoresist material.
23. The method according to claim 11 , wherein the deposing occurs through a photoresist material.
24. The method according to claim 1 , wherein the forming occurs while a photoresist material is arranged on a structure having the trench.
25. The method according to claim 11 , wherein the flushing occurs while a photoresist material is arranged on the dual damascene structure.
26. The method according to claim 1 , further comprising forming the trench by etching into a dual damascene structure through a photoresist material.
27. The method according to claim 1 , further comprising forming the trench by etching into an interlevel dielectric film (ILD) of a dual damascene structure.