Method for fabricating an integrated circuit on a semiconductor substrate

1. Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer, said intermediate counter-stress layer being arranged between said poly-crystalline silicon layer and said conductive layer, and enabling stress-reduced crystallization of the poly-crystalline silicon layer, and wherein said intermediate counter-stress layer is amorphous at and below a poly-silicon crystallization temperature, wherein the intermediate counter-stress layer is electrically conducting.

2. Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer, said intermediate counter-stress layer being arranged between said poly-crystalline silicon layer and said conductive layer, and enabling stress-reduced crystallization of the poly-crystalline silicon layer, and wherein said intermediate counter-stress layer is amorphous at and below a poly-silicon crystallization temperature, wherein the thickness of the intermediate counter-stress layer ranges from 0.5 nm to 15 nm, such that charge transport across the intermediate counter-stress layer is possible by means of tunneling.

3. Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer, said intermediate counter-stress layer being arranged between said poly-crystalline silicon layer and said conductive layer, and enabling stress-reduced crystallization of the poly-crystalline silicon layer, and wherein said intermediate counter-stress layer is amorphous at and below a poly-silicon crystallization temperature, wherein the intermediate counter-stress layer is a porous layer.

4. Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer, said intermediate counter-stress layer being arranged between said poly-crystalline silicon layer and said conductive layer, and enabling stress-reduced crystallization of the poly-crystalline silicon layer, and wherein said intermediate counter-stress layer is amorphous at and below a poly-silicon crystallization temperature, wherein the integrated circuit device further comprises a dielectric element, said dielectric element being arranged beneath the conductive layer, such to form a capacitor dielectric.

5. Integrated circuit device as claimed in claim 4 , wherein the dielectric element comprises at least one of Al 2 O 3 , SiO 2 , HfO, ZrO, TiO 2 , Ba 1-x Sr x TiO 3 .

6. Integrated circuit device comprising a conductive layer and a poly-crystalline silicon layer, wherein the integrated circuit device further comprises an intermediate counter-stress layer, said intermediate counter-stress layer being arranged between said poly-crystalline silicon layer and said conductive layer, and enabling stress-reduced crystallization of the poly-crystalline silicon layer, and wherein said intermediate counter-stress layer is crystalline at and below a poly-silicon crystallization temperature.

7. Integrated circuit device as claimed in claim 6 , wherein the intermediate counter-stress layer is electrically conducting.

8. Integrated circuit device as claimed in claim 6 , wherein the thickness of the intermediate counter-stress layer ranges from 0.5 nm to 15 nm, such that charge transport across the intermediate counter-stress layer is possible by means of tunneling.

9. Integrated circuit device as claimed in claim 6 , wherein the intermediate counter-stress layer is a porous layer.

10. Integrated circuit device as claimed in claim 6 , wherein the conductive layer comprises at least one of TiN, TiSiN, TiSiO, Ru, RuN, RuO, RuSiN, RuSiO, TaN, TaSiN, TaSiO, RuTaN, RuTaSiN, RuTaSiO 2 , WN, WSiN, WSiO, WBN, carbon.

11. Integrated circuit device as claimed in claim 6 , wherein the intermediate counter-stress layer comprises at least one of SiN, SiO 2 , SiON, C, Al 2 O 3 , AlSiO, AlN, TiAlN, TaN, HfO, HfN, HfON, HfSiO, HfSiON, HfAlO, HfAlN, TiO 2 .

12. Integrated circuit device as claimed in claim 6 , wherein the integrated circuit device further comprises a dielectric element, said dielectric element being arranged beneath the conductive layer, such to form a capacitor dielectric.

13. Integrated circuit device as claimed in claim 12 , wherein the dielectric element comprises at least one of Al 2 O 3 , SiO 2 , HfO, ZrO, TiO 2 , Ba 1-x Sr x TiO 3 .

14. Integrated circuit device as claimed in claim 1 , wherein the conductive layer comprises at least one of TiN, TiSiN, TiSiO, Ru, RuN, RuO, RuSiN, RuSiO, TaN, TaSiN, TaSiO, RuTaN, RuTaSiN, RuTaSiO 2 , WN, WSiN, WSiO, WBN, carbon.

15. Integrated circuit device as claimed in claim 1 , wherein the intermediate counter-stress layer comprises at least one of SiN, SiO 2 , SiON, C, Al 2 O 3 , AlSiO, AlN, TiAlN, TaN, HfO, HfN, HfON, HfSiO, HfSiON, HfAlO, HfAlN, TiO 2 .

16. Integrated circuit device as claimed in claim 2 , wherein the conductive layer comprises at least one of TiN, TiSiN, TiSiO, Ru, RuN, RuO, RuSiN, RuSiO, TaN, TaSiN, TaSiO, RuTaN, RuTaSiN, RuTaSiO 2 , WN, WSiN, WSiO, WBN, carbon.

17. Integrated circuit device as claimed in claim 2 , wherein the intermediate counter-stress layer comprises at least one of SiN, SiO 2 , SiON, C, Al 2 O 3 , AlSiO, AlN, TiAlN, TaN, HfO, HfN, HfON, HfSiO, HfSiON, HfAlO, HfAlN, TiO 2 .

18. Integrated circuit device as claimed in claim 3 , wherein the conductive layer comprises at least one of TiN, TiSiN, TiSiO, Ru, RuN, RuO, RuSiN, RuSiO, TaN, TaSiN, TaSiO, RuTaN, RuTaSiN, RuTaSiO 2 , WN, WSiN, WSiO, WBN, carbon.

19. Integrated circuit device as claimed in claim 3 , wherein the intermediate counter-stress layer comprises at least one of SiN, SiO 2 , SiON, C, Al 2 O 3 , AlSiO, AlN, TiAlN, TaN, HfO, HfN, HfON, HfSiO, HfSiON, HfAlO, HfAlN, TiO 2 .

20. Integrated circuit device as claimed in claim 4 , wherein the conductive layer comprises at least one of TiN, TiSiN, TiSiO, Ru, RuN, RuO, RuSiN, RuSiO, TaN, TaSiN, TaSiO, RuTaN, RuTaSiN, RuTaSiO 2 , WN, WSiN, WSiO, WBN, carbon.

21. Integrated circuit device as claimed in claim 4 , wherein the intermediate counter-stress layer comprises at least one of SiN, SiO 2 , SiON, C, Al 2 O 3 , AlSiO, AlN, TiAlN, TaN, HfO, HfN, HfON, HfSiO, HfSiON, HfAlO, HfAlN, TiO 2 .