Method for manufacturing semiconductor device
View Patent ↗A method for manufacturing a semiconductor device includes steps of injecting a hole current into an N drift region while a constant voltage is applied to a P + anode of a lateral insulated gate bipolar transistor, such that a majority of the hole current passes through a P + cathode of the lateral insulated gate bipolar transistor via a P + buried layer. Therefore, a hole-current path located under an N + cathode area of a LIGBT structure is eliminated, thus securing sufficient latch-up current density.
1. A method for manufacturing and operating a semiconductor device, comprising:
forming a P + buried layer;
forming an N drift region formed over the P + buried layer;
forming a cathode, a gate, and an anode over the P + buried layer, the cathode, the gate, and the anode being spaced apart from each another;
forming a P + cathode below the cathode and over the P + buried layer;
forming a P-base area below the gate and over the P + buried layer, the P-base are being spaced apart from the P + cathode;
forming a P + anode below the anode and over the P + buried layer;
forming a N + cathode over the P + buried layer and between the cathode and gate, wherein the P-base area is not formed below the N + cathode; and
injecting a hole current into the N drift region while a constant voltage is applied to the P + anode, such that a majority of the hole current passes through the P + cathode of via the P + buried layer.