Flash memory device with improved programming performance
View Patent ↗A selected wordline that is coupled to a cell to be programmed is biased during a program operation. The unselected wordlines are biased with a negative potential to reduce the cell leakage at programming bitline potential. A programming pulse is applied to the bitline coupled to the cell to be programmed. During verification, the unselected wordlines are biased back to ground potential.
1. A flash memory device comprising:
a memory array having a plurality of flash memory cells organized in rows and columns, each column comprising a bitline coupling drain connections of the plurality of flash memory cells and each row comprising a wordline coupling control gates of the plurality of flash memory cells; and
control circuitry adapted to perform a programming operation on the memory array, the programming operation comprising:
pulsing the bitline, coupled to a flash memory cell to be programmed, with a programming pulse having a first predetermined voltage;
biasing a selected wordline, coupled to the flash memory cell to be programmed, to a second predetermined voltage; and
biasing unselected wordlines to a predetermined negative voltage.
2. The device of claim 1 wherein the control circuitry is further adapted to perform a program verify operation that comprises biasing the unselected wordlines to ground potential.
3. The device of claim 1 and further including row and column decoders to generate the wordline and bitline, respectively.
4. The device of claim 1 wherein the predetermined negative voltage is substantially in a range of −0.1 to −8V.
5. The device of claim 1 wherein the first predetermined voltage is substantially in a range of 3–6V.
6. The device of claim 1 wherein the second predetermined voltage is substantially in a range of 6–12V.
7. The device of claim 1 wherein the control circuitry is further adapted to verify the programmed flash memory cell.
8. The device of claim 7 wherein verifying comprises returning the unselected wordlines from the predetermined negative voltage to a ground potential.
9. The device of claim 1 wherein the memory array is connected in a NOR architecture.
10. A non-volatile memory device comprising:
a memory array having a plurality of non-volatile memory cells organized in rows and columns, each column comprising a bitline and each row comprising a wordline; and
control circuitry adapted to perform a programming operation on the memory array, the programming operation comprising:
pulsing the bitline, coupled to a non-volatile memory cell to be programmed, with a programming pulse having a first positive voltage;
biasing a selected wordline, coupled to the non-volatile memory cell to be programmed, to a second positive voltage; and
biasing unselected wordlines to a predetermined negative voltage.
11. The device of claim 10 wherein the control circuitry is further adapted to verify the programmed non-volatile memory cell by returning the unselected wordlines from the predetermined negative voltage to a ground potential.
12. The device of claim 10 and further including row and column decode circuitry.
13. An electronic system comprising:
a processor that generates memory control signals; and
a flash memory device coupled to the processor and operating in response to the control signals, the flash memory device comprising:
a memory array having a plurality of flash memory cells organized in rows and columns, each column comprising a bitline and each row comprising a wordline; and
control circuitry adapted to perform a programming operation on the memory array, the programming operation comprising:
pulsing the bitline, coupled to a flash memory cell to be programmed, with a programming pulse having a first predetermined voltage;
biasing a selected wordline, coupled to the flash memory cell to be programmed, to a second predetermined voltage; and
biasing unselected wordlines to a predetermined negative voltage.
14. The system of claim 10 wherein the control circuitry is further adapted to perform a program verify operation that comprises increasing the predetermined negative voltage to ground potential for a read operation.
15. The system of claim 10 wherein the memory control signals comprise program and read operations.
16. The system of claim 13 wherein the flash memory device is coupled to the processor over address, data and control buses.
17. The system of claim 16 wherein the control circuitry is coupled to the processor over the control bus.
18. The system of claim 13 wherein the flash memory device further includes row and column decoders to generate the wordlines and bitlines, respectively.
19. The system of claim 18 wherein the row and column decoders are coupled to an address bus.
20. The system of claim 13 wherein the predetermined negative voltage is substantially in a range of −0.1 to −8V, the first predetermined voltage is substantially in a range of 3–6V, and the second predetermined voltage is substantially in a range of 6–12V.