Method of forming substantially L-shaped silicide contact for a semiconductor device

1. A method of forming a contact for a semiconductor device, the method comprising:

providing a structure for the semiconductor device having an interface between a source/drain region and an isolation region;

removing a port ion of the interface to create an edge on the source/drain region;

forming a substantially L-shaped silicide element including a base member and an extended member about the edge, the base member extending at least partially into the isolation region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the isolation region;

forming the contact connected to the substantially L-shaped silicide element,

wherein the contact forming includes forming the contact including a notch region for mating with the base member and a portion of the extended member; and

re-forming the isolation region to its original surface height such that the base member extends into the isolation region;

wherein the removing is provided as part of a step of forming a member over the source/drain region prior to the substantially L-shaped silicide element forming step, the member including a silicon-germanium member for a P-type semiconductor device or a silicon carbon member for an N-type semiconductor device, and

wherein the removing step includes removing the interface to a depth that is shallower than a source/drain junction depth.

2. The method of claim 1 , wherein the contact forming includes forming a plurality of contacts such that a first contact for a first transistor is staggered relative to an adjacent, second contact for a second transistor along the isolation region.