Method for whole field thin film stress evaluation
View Patent ↗A novel method for whole field thin film stress evaluation is provided. Through the provided method, the whole filed thin film stress distribution for an optical thin film would be developed with a commercial interferometer, so that a whole field evaluation for the crack or peel-off of thin film is hence achievable.
1. A method for evaluating a whole field stress in a thin film, comprising:
(a) preparing a substrate;
(b) measuring a wavefront for said substrate with a laser having a wavelength of λ so as to obtain a first wavefront phase;
(c) depositing an optical thin film on said substrate as a specimen;
(d) measuring a wavefront for said specimen so as to obtain a second wavefront phase;
(e) determining a phase difference between said first wavefront phase and said second wavefront phase by means of an image subtraction;
(f) fitting said phase difference with Zernike polynomials so as to obtain a fitting result for a respective surface topography of said substrate and said specimen;
(g) retaining a coefficient of a specific term of said Zernike polynomials according to said fitting result, wherein said specific term is corresponding to a strain for said whole field stress; and
(h) obtaining said whole field stress according to said coefficient of said specific term.
2. The method according to claim 1 , wherein said substrate is a BK7 optical substrate.
3. The method according to claim 1 , wherein said substrate has a flatness less than λ.
4. The method according to claim 1 , wherein in said steps (b) and (d), said wavefront is measured by a Fizeau interferometer with a standard planar lens having a precision less than λ/10.
5. The method according to claim 1 , wherein in said step (c), said optical thin film is deposited on said substrate by a physical coating process.
6. The method according to claim 5 , wherein said physical coating process is one selected from a group consisting of an evaporation, a sputtering and a physical vapor deposition.
7. The method according to claim 1 , wherein said optical thin film is made of silica oxide.
8. The method according to claim 1 , wherein in said step (g), said specific term is determined by a formula of ∇ 4 Z(ρ,θ)=0, wherein Z(ρ,θ) represents said Zernike polynomials.
9. A method for evaluating a whole field stress in a thin film, comprising:
(a) preparing a substrate;
(b) measuring a wavefront for said substrate with a laser having a wavelength of λ so as to obtain a first wavefront phase;
(c) depositing an optical thin film on said substrate as a specimen;
(d) measuring a wavefront for said specimen so as to obtain a second wavefront phase;
(e) fitting said first wavefront phase and said second wavefront phase with a Zernike polynomial respectively;
(f) determining said phase difference by means of numerical subtraction of the coefficients so as to obtain a result for a respective surface topography change of said substrate and said specimen;
(g) retaining a coefficient of a specific term of said Zernike polynomials according to said fitting result, wherein said specific term is corresponding to a strain for said whole field stress; and
(h) obtaining said whole field stress according to said coefficient of said specific term.
10. The method according to claim 9 , wherein said substrate is a BK7 optical substrate.
11. The method according to claim 9 , wherein in said steps (b) and (d), said wavefront is measured by means of two-beam interference.
12. The method according to claim 9 , wherein said optical thin film is made of silica oxide.
13. The method according to claim 9 , wherein in said step (g), said special terms are determined by a formula of ∇ 4 Z(ρ,θ), wherein Z(ρ,θ) represents said Zernike polynomials.