Integrated circuit packaging system with ultra-thin die
View Patent ↗An integrated circuit packaging system with ultra-thin die is provided including providing an ultra-thin integrated circuit stack, having a vertical sidewall contact, including providing a semiconductor wafer having an active side, forming a solder bump on the active side of the semiconductor wafer, forming a support layer over the solder bump and the active side of the semiconductor wafer, forming an ultra-thin wafer from the semiconductor wafer and singulating the ultra-thin integrated circuit stack for exposing the vertical sidewall contact, mounting the ultra-thin integrated circuit stack on a substrate, and coupling the substrate to the vertical sidewall contact.
1. An integrated circuit package comprising:
a substrate having a substrate top and a substrate bottom;
a first ultra-thin integrated circuit attached to the substrate top, the first ultra-thin integrated circuit having a first contact pad with a first elliptical over-aligned bump bond pad attached thereon;
a second ultra-thin integrated circuit over the first ultra-thin integrated circuit, the second ultra-thin integrated circuit having a second contact pad with a second elliptical over-aligned bump bond pad attached thereon;
an epoxy molding compound operable to encapsulate the first ultra-thin integrated circuit and the first contact pad, and the second ultra-thin integrated circuit and the second contact pad, wherein a vertical sidewall of the epoxy molding compound exposes the first elliptical over-aligned bump bond pad and the second elliptical over-aligned bump bond pad;
a first electrical interconnect coupled for the first elliptical over-aligned bump bond pad through the vertical sidewall directly to the substrate top; and
a second electrical interconnect coupled from the second elliptical over-aligned bump bond pad through the vertical sidewall directly to the substrate top.
2. The package as claimed in claim 1 , wherein:
the first electrical interconnect is a first bond wire, and
the second electrical interconnect is a second bond wire.
3. The package as claimed in claim 1 , further comprising:
system interconnects attached to the substrate bottom.
4. The package as claimed in claim 3 , wherein the system interconnects include solder balls, solder columns or stud bumps.
5. An integrated circuit package comprising:
a first metalized substrate having a first metal side contact;
a second metalized substrate over the first metalized substrate, the second metalized substrate having a second metal side contact, wherein the second metal side contact and the first metal side contact have a staggered configuration;
a first ultra-thin integrated circuit stack mounted over the first metalized substrate and the second metalized substrate, wherein the first ultra-thin integrated circuit stack includes:
a first ultra-thin integrated circuit having a first contact pad with a first elliptical over-aligned bump pad attached thereon; and
an epoxy molding compound operable to encapsulate the first ultra-thin integrated circuit and the first contact pad, wherein a vertical sidewall of the epoxy molding compound exposes the first elliptical over-aligned bump bond pad; and
a first electrical interconnect coupled from the first ultra-thin integrated circuit through the vertical sidewall to at least one of:
the first metal side contact, and
the second metal side contact.
6. The package as claimed in claim 5 , wherein:
the second metalized substrate includes top metal contact, where the top metal contact and the second metal side contact and the first metal side contact have the staggered configuration; and
the first electrical interconnect is coupled from the first ultra-thin integrated circuit through the vertical sidewall to the top metal contact.
7. The package as claimed in claim 6 , further comprising:
a second ultra-thin integrated circuit stack mounted over the first ultra-thin integrated circuit stack, wherein the second ultra-thin integrated circuit stack includes:
a second ultra-thin integrated circuit having a second contact pad with a second elliptical over-aligned bump pad attached thereon; and
wherein the epoxy molding compound is operable to encapsulate the second ultra-thin integrated circuit and the second contact pad, wherein the vertical sidewall of the epoxy molding compound exposes the second elliptical over-aligned bump bond pad; and
a second electrical interconnect coupled from the second ultra-thin integrated circuit through the vertical sidewall to at least one of:
the first ultra-thin integrated circuit through the vertical sidewall,
the first metal side contact,
the second metal side contact, and
the top metal contact.
8. The package as claimed in claim 7 , further comprising:
an integrated circuit mounted over the second ultra-thin integrated circuit stack and the first ultra-thin integrated circuit stack, wherein the integrated circuit includes a bonding contact; and
a third electrical interconnect coupled from the bonding contact to at least one of:
the first ultra-thin integrated circuit through the vertical sidewall,
the second ultra-thin integrated circuit through the vertical sidewall,
the first metal side contact,
the second metal side contact, and
the top metal contact.
9. The package as claimed in claim 8 , wherein the first metal side contact is a first gold contact, the second metal side contact is a second gold contact, and the top metal contact is a third gold contact.
10. The package as claimed in claim 8 , wherein
the first electrical interconnect is a first bond wire,
the second electrical interconnect is a second bond wire, and
the third electrical interconnect is a third bond wire.
11. The package as claimed in claim 8 , further comprising:
system interconnects attached to the bottom of the first metalized substrate.
12. The package as claimed in claim 11 , wherein the system interconnects include solder balls, solder columns or stud bumps.
13. An integrated circuit package comprising:
a substrate having a substrate top and a substrate bottom;
a first ultra-thin integrated circuit attached to the substrate top, the first ultra-thin integrated circuit having a first contact pad with a first elliptical over-aligned bump bond pad attached thereon;
a second ultra-thin integrated circuit over the first ultra-thin integrated circuit, the second ultra-thin integrated circuit having a second contact pad with a second elliptical over-aligned bump bond pad attached thereon;
an epoxy molding compound operable to encapsulate the first ultra-thin integrated circuit and the first contact pad, and the second ultra-thin integrated circuit and the second contact pad,
wherein a first oblique cut surface of the epoxy molding compound exposes the first elliptical over-aligned bump bond pad, and
wherein a second oblique cut surface of the epoxy molding compound exposes the second elliptical over-aligned bump bond pad;
a first electrical interconnect coupled from the first elliptical over-aligned bump bond pad through the first oblique cut surface directly to the substrate top; and
a second electrical interconnect coupled from the second elliptical over-aligned bump bond pad through the second oblique cut surface directly to the substrate top.
14. The package as claimed in claim 13 , wherein:
the first electrical interconnect is a first bond wire, and
the second electrical interconnect is a second bond wire.
15. The package as claimed in claim 13 , further comprising:
system interconnects attached to the substrate bottom.
16. The package as claimed in claim 15 , wherein the system interconnects include solder balls, solder columns or stud bumps.