IP Library Granted Patent US 7,495,323
Granted Patent B2
US 7,495,323 · App. 11/468,542 · Granted Feb 24, 2009

Semiconductor package structure having multiple heat dissipation paths and method of manufacture

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Quick Facts
Patent No.
US 7,495,323
App. No.
11/468,542
Granted
Feb 24, 2009
Kind
B2
Abstract

In one embodiment, a semiconductor package structure includes a conductive bridge having coupling portions on opposing ends. A lead frame includes alignment or receiving features for receiving the coupling portions of the bridge. A semiconductor device is attached to both the conductive bridge and the lead frame, and is configured so that the coupling portions are on opposing sides of the semiconductor device.

Claims (30)

1. A semiconductor package structure having multiple heat dissipation paths comprising:

a semiconductor component having first and second opposing surfaces;

a conductive support structure having a plurality of support pads, wherein the first surface of the semiconductor component is coupled to one or more of the plurality of support pads and wherein at least two of the support pads have an alignment structure formed therein;

a conductive connective bridge coupled to the second surface of the semiconductor component, wherein the conductive connective bridge comprises coupling portions on opposing ends, and wherein the coupling portions are aligned to the alignment structure on at least two support pads, and wherein the coupling portions extend from a major surface of the conductive connective bridge, and wherein the coupling portions are in physical contact with the alignment structures without an intervening material, and wherein the coupling portions and the alignment structures are configured to enhance planarity between the conductive connective bridge and semiconductor component; and

an encapsulating layer passivating portions of the semiconductor package structure while leaving portions of the conductive connective bridge and portions of the plurality of supports pads exposed to provide the multiple heat dissipation paths.

2. The structure of claim 1 , wherein the coupling portions comprise rectangular like blocks having sides that are substantially perpendicular to the conductive connective bridge.

3. The structure of claim 2 , wherein the blocks are each in proximity to corners of the conductive connective bridge.

4. The structure of claim 1 , wherein the coupling portions comprise continuous beam portions extending away from an inside surface of the conductive connective bridge.

5. The structure of claim 1 , wherein the alignment portions comprise wells formed in major surfaces of the at least two support pads.

6. The structure of claim 5 , wherein portions of the coupling portions are physically within the wells.

7. The structure of claim 1 , wherein the alignment portions comprise a plurality of spaced apart block portions.

8. The structure of claim 7 , wherein the coupling portions are on one side only of the alignment portions.

9. The structure of claim 1 , wherein the alignment portions comprise a single continuous raised pedestal.

10. The structure of claim 9 , wherein the coupling portions are on one side only of the alignment portions.

11. A semiconductor package structure comprising:

a lead frame having a plurality of beam portions, wherein at least two beam portions include receiving structures formed thereon;

a semiconductor device having first and second opposed major surfaces, wherein the semiconductor device has a first current carrying electrode on the first surface, and wherein the first current carrying electrode is attached to a first beam portion, and wherein the second major surface comprises a second current carrying electrode;

a conductive plate having coupling portions extending from one surface, wherein the one surface is coupled to the second major surface of the semiconductor device so that the coupling portions are on two opposing sides of the semiconductor device, and wherein the coupling portions are in physical contact with the alignment structures without an intervening material, and wherein the coupling portions are configured to couple with the receiving structures to enhance planarity between the conductive plate and the semiconductor device; and

an encapsulating layer formed over portions of the semiconductor package leaving portions of the conductive plate and portions of the beam portions exposed.

12. The package of claim 11 , wherein the first beam includes at least one pedestal for coupling to the first current carrying electrode.

13. The package of claim 11 , wherein the semiconductor device further comprises a control electrode formed on the first surface, and wherein the control electrode is coupled to a second beam portion adjacent the first beam portion, and wherein the first and second beam portions are between the at least two beam portions having the receiving structures.

14. The package of claim 11 , wherein the receiving structures comprise wells, spaced apart pedestals, or single continuous pedestals.

15. The package of claim 11 , wherein the coupling portions comprise rectangular like blocks formed in proximity to four corners of the conductive plate.

16. The package of claim 11 , wherein the coupling portions are each on one side only of the receiving structures.

17. A method of forming a semiconductor package comprising the steps of:

providing a lead frame having a plurality of beam portions, wherein at least two beam portions include alignment structures formed thereon;

attaching a semiconductor device having first and second opposed major surfaces and a first current carrying electrode on the first surface to a first beam portion, and wherein the second major surface comprises a second current carrying electrode;

attaching a conductive plate to the second major surface of the semiconductor device, wherein the conductive plate has coupling portions extending from one surface, and wherein the attaching step includes attaching the coupling portions to the alignment structures so that the coupling portions are on two opposing sides of the semiconductor device and in physical contact with the alignment structures without an intervening material during the step of attaching the coupling portions to the alignment structures so as to provide a built-in stop feature between the coupling portions and the alignment structures; and

forming an encapsulating layer formed over portions of the semiconductor package leaving portions of the conductive plate and portions of the beam portions exposed.

18. The method of claim 17 , wherein the step of providing the lead frame includes providing a lead frame wherein the alignment structures comprise wells, spaced apart pedestals, or single continuous pedestals.

Assignments (6)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
RELEASE OF SECURITY INTEREST Recorded Sep 4, 2014
From: JPMORGAN CHASE BANK, N.A.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033686/0092 →
SECURITY AGREEMENT Recorded Sep 10, 2007
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 019795/0808 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 30, 2006
From: ST.GERMAIN, STEPHEN; CELAYA, PHILLIP; ARBUTHNOT, ROGER; CARNEY, FRANCIS J.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C.
Reel/Frame 018190/0882 →