Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same
View Patent ↗An integrated circuit is disclosed that includes a first layer made of active semiconductor material and extending along a first side of a buried layer, and trench structures, which cut through the layer made of active semiconductor material and have dielectric wall regions, whereby the dielectric wall regions isolate electrically subregions of the layer, made of active semiconductor material in the lateral direction, and whereby the trench structures, furthermore, have first inner regions, which are filled with electrically conductive material and contact the buried layer in an electrically conductive manner. The integrated circuit is notable in that the first wall regions of the trench structures completely cut through the buried layer and the second wall regions of the trench structures extend into the buried layer, without cutting it completely. Furthermore, a method for manufacturing such an integrated circuit is disclosed.
1. An integrated circuit comprising:
a first layer made of active semiconductor material and extending along a first side of a buried layer; and
a plurality of trench structures that cut through the first layer made of active semiconductor material and each of said plurality of trench structures have a first dielectric wall region and a second dielectric wall region, the first and second dielectric wall regions electrically isolating subregions of the first layer from one another in a lateral direction, each of the plurality of trench structures further including first inner regions, which are filled with electrically conductive material and contact the buried layer in an electrically conductive manner,
wherein said first dielectric wall region of each of the plurality of trench structures completely cuts through the buried layer and said second dielectric wall region of each of the plurality of trench structures extends into the buried layer without cutting it completely.
2. The integrated circuit according to claim 1 , wherein the trench structures have second inner regions, which are filled with electrically conductive material and which contact electrically a second layer, which extends along a second side of the buried layer.
3. The integrated circuit according to claim 2 , wherein the second layer is formed of a semiconductor material.