PMOS transistor of semiconductor device, semiconductor device comprising the same, and method for manufacturing the same
View Patent ↗A PMOS transistor of a semiconductor device exhibiting improved characteristics, a semiconductor device incorporating the same, and a method for manufacturing the semiconductor device. The PMOS transistor incorporates a first gate insulation film formed in a predetermined region on a semiconductor substrate and comprising a hafnium-based oxide, a second gate insulation film formed on the first gate insulation film for shielding reaction between hafnium and silicon, and a gate conductive film formed on the second gate insulation film and comprising polysilicon.
1. A method for manufacturing a semiconductor device, comprising:
providing a semiconductor substrate having a first region to form an NMOS transistor thereon, and a second region to form a PMOS transistor thereon;
forming a first gate insulation film comprising a hafnium-based oxide on the first region and second region of the semiconductor substrate;
forming a second gate insulation film for shielding reaction between hafnium and silicon on the first gate insulation film of the second region;
forming a third gate insulation film on the first gate insulation film of the first region, wherein the third gate insulation film comprises a different material from that of the second gate insulation film;
forming a gate conductive film comprising polysilicon on the second and third gate insulation films;
patterning the first and third gate insulation films, and the gate conductive film on the first region; and
patterning the first and second gate insulation films, and the gate conductive film on the second region.
2. The method of claim 1 , wherein the hafnium-based oxide is selected from the group consisting of HfO 2 , HfSiO x , HfAlO x , and HfSiON.
3. The method of claim 1 , wherein the second and third gate insulation films comprise an insulation material having a higher dielectric constant than that of SiO 2 .
4. The method of claim 1 , wherein the second gate insulation film comprises Al 2 O 3 .
5. The method of claim 1 , wherein the third gate insulation film comprises the hafnium-based oxide.
6. The method of claim 1 , comprising forming the first gate insulation film is formed by atomic layer deposition (ALD).
7. The method of claim 1 , comprising forming the second gate insulation film forming by:
forming a first mask pattern on the first gate insulation film to selectively expose the second region;
depositing the second gate insulation film on the first gate insulation film of the second region; and
removing the first mask pattern.
8. The method of claim 7 , wherein the first mask pattern comprises a polyimide-based photoresist pattern, and comprising depositing the second gate insulation film by atomic layer deposition (ALD).
9. The method of claim 8 , comprising depositing the second gate insulation film at a temperature of about 200° C. to about 300° C.
10. A method for manufacturing a semiconductor device, comprising:
providing a semiconductor substrate having a first region to form an NMOS transistor thereon, and a second region to form a PMOS transistor thereon;
forming a first gate insulation film comprising a hafnium-based oxide on the first region and second region of the semiconductor substrate;
forming a second gate insulation film for shielding reaction between hafnium and silicon on the first gate insulation film of the second region;
forming a second mask pattern on the first gate insulation film to selectively open the first region;
depositing a third gate insulation film on the first gate insulation film of the first region;
removing the second mask pattern;
forming a gate conductive film comprising polysilicon on the second and third gate insulation films;
patterning the first and third gate insulation films, and the gate conductive film on the first region; and
patterning the first and second gate insulation films, and the gate conductive film on the second region.
11. The method of claim 10 , wherein the second mask pattern comprises a polyimide-based photoresist pattern, and comprising depositing the third gate insulation film by atomic layer deposition (ALD).