IP Library Granted Patent US 7,265,454
Granted Patent B2
US 7,265,454 · App. 11/526,254 · Granted Sep 4, 2007

Semiconductor device and method of producing high contrast identification mark

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Quick Facts
Patent No.
US 7,265,454
App. No.
11/526,254
Granted
Sep 4, 2007
Kind
B2
Abstract

A semiconductor device ( 50 ) includes a semiconductor die ( 20 ) having a first surface ( 14 ) for forming electronic circuitry. A coating layer ( 16 ) formed on a second surface ( 15 ) of the semiconductor die has a color that contrasts with the color of the semiconductor die. The coating layer is patterned to expose a portion of the second surface to reveal information pertaining to the semiconductor device. The coating layer is patterned by directing a radiation beam ( 30 ) such as a laser to selectively remove material from the coating layer.

Claims (25)

1. A semiconductor device, comprising:

a semiconductor substrate having a topside surface for forming electronic circuitry;

a first coating layer formed on a backside surface of the semiconductor substrate and having a first color; and

a second coating layer formed with a second color different than the first color on a surface of the first coating layer, and having openings that expose the first coating layer to provide information about the semiconductor device, wherein the information includes an alphanumeric character formed with a font less than about three hundred micrometers in height.

2. The semiconductor device of claim 1 , wherein the first coating layer has a thickness less than about eighteen micrometers.

3. The semiconductor device of claim 2 , wherein the second coating layer has a thickness less than about eighteen micrometers.

4. The semiconductor device of claim 1 , wherein the first color is white and the second color is black.

5. The semiconductor device of claim 1 , wherein the first coating layer includes an additional opening to expose a portion of the backside surface.

6. The semiconductor device of claim 1 , wherein the first color and the second color comprise a color other than black.

7. A method of making a semiconductor die, comprising the steps of:

laminating a surface of a semiconductor wafer with a first material having a first color;

laminating the first material with a second material having a contrasting color;

forming openings through the second material to provide visible information about the semiconductor device; and

singulating the semiconductor wafer to form the semiconductor die after the steps of laminating.

8. The method of claim 7 , wherein the step of laminating the surface includes the step of coating the surface to a thickness of less than about eighteen micrometers.

9. The method of claim 7 , wherein the step of laminating the first material includes the step of coating the first material to a thickness less than about eighteen micrometers.

10. The method of claim 7 , further comprising the step of forming openings through the first material to expose the surface of the semiconductor wafer to provide additional information about the semiconductor device.

11. The method of claim 7 , wherein the step of forming openings through the second material to provide visible information about the semiconductor device includes forming an alphanumeric character with a font less than about three hundred micrometers in height.

12. A semiconductor device, comprising:

a semiconductor die having a first surface for forming electronic circuitry; and

a multilayered coating layer disposed on a second surface of the semiconductor die and including first and second layers having first and second contrasting colors, respectively, wherein the first layer is patterned to expose a portion of the second layer to provide visible information pertaining to the semiconductor device, and wherein the visible information includes an alphanumeric character less than about three hundred micrometers in height.

13. The device of claim 12 , wherein the second layer is patterned to expose a portion of the second surface.

14. The device of claim 12 , wherein the first layer has a thickness less than about eighteen micrometers.

15. The device of claim 12 , wherein the second layer has a thickness less than about eighteen micrometers.

16. The device of claim 12 , wherein the first and second layers comprise a color other than black.

Assignments (6)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 2, 2016
From: SEDDON, MICHAEL J.; CARNEY, FRANCIS J.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038434/0127 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
RELEASE OF SECURITY INTEREST Recorded Sep 4, 2014
From: JPMORGAN CHASE BANK, N.A.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033686/0092 →
SECURITY AGREEMENT Recorded Sep 10, 2007
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 019795/0808 →