Method and apparatus for discharging a memory cell in a memory device after an erase operation
View Patent ↗A method and apparatus for discharging a memory cell in a memory device. In one implementation, the memory cell includes a capacitor having a first plate and a second plate, and the method includes initially discharging the first plate of the capacitor through a first discharge circuit and discharging the second plate of the capacitor through a second discharge circuit. After the initial discharge, the method further includes completely discharging the first plate of the capacitor and the second plate of the capacitor by coupling both the first plate of the capacitor and the second plate of the capacitor to ground.
1. A method for discharge in a memory device, the method comprising:
initiating a discharge of a memory cell after an erase operation;
coupling a first discharge circuit to a first plate of a first capacitor, and a second discharge circuit to a second plate of the first capacitor, wherein the first plate represents a common gate node of the memory cell and the second plate represents a bulk-source node of the memory cell versus ground; and
coupling the common gate node and the bulk-source node to ground to provide for a discharge.
2. The method of claim 1 , wherein a current injected into the first plate is approximately equal to a current extracted from the second plate.
3. The method of claim 1 , wherein the first capacitor is a gate-bulk capacitor.
4. The method of claim 3 , wherein the first plate of the gate-bulk capacitor is coupled to a second capacitor representing a capacitance of a gate node of the memory cell versus all other nodes except the bulk-source node.
5. The method of claim 4 , wherein the second plate of the gate-bulk capacitor is coupled to a third capacitor representing a capacitance of the bulk-source node versus all other nodes except a gate node.
6. The method of claim 1 , wherein the memory device is a flash memory device.
7. A method for discharging a memory cell in a memory device, the memory cell including a capacitor having a first plate and a second plate, the method comprising:
initially discharging the first plate of the capacitor through a first discharge circuit and discharging the second plate of the capacitor through a second discharge circuit, the first discharge circuit being separate from the second discharge circuit; and
after the initial discharge, completely discharging the first plate of the capacitor and the second plate of the capacitor by coupling both the first plate of the capacitor and the second plate of the capacitor to ground.
8. The method of claim 7 , wherein the first discharge circuit has a first node operable to be connected to the first plate and a second node connected to ground, the second discharge circuit has a first node operable to be connected to the second plate and a second node connected to ground.
9. The method of claim 8 , wherein discharging the first plate of the capacitor through a first discharge circuit and discharging the second plate of the capacitor through a second discharge circuit includes injecting a current into the first plate of the capacitor that is approximately equal to current extracted from the second plate of the capacitor.
10. The method of claim 8 , wherein the memory cell in the memory device is discharged after an erase operation in the memory cell.
11. The method of claim 10 , wherein the erase operation of the memory cell is performed using Fowler-Nordheim tunneling.
12. The method of claim 8 , wherein the capacitor is a gate-bulk capacitor and the first plate represents a common gate node of the memory cell and the second plate represents a bulk-source node of the memory cell.
13. The method of claim 8 , wherein the memory device is a flash memory device.
14. A memory device comprising:
a memory cell including a capacitor having a first plate and a second plate;
a first discharge circuit having a first node to be connected to the first plate and a second node connected to ground;
a second discharge circuit having a first node to be connected to the second plate and a second node connected to ground; and
a control circuit to discharge the capacitor after an erase operation of the memory cell by
initially discharging the first plate of the capacitor through the first discharge circuit by coupling the first node of the first discharge circuit to the first plate, and discharging the second plate of the capacitor through the second discharge circuit by coupling the first node of the second discharge circuit to the first plate; and
after the initial discharge, the control circuit to completely discharge the first plate of the capacitor and the second plate of the capacitor by coupling both the first plate of the capacitor and the second plate of the capacitor to ground.
15. The memory device of claim 14 , wherein during the initial discharge the first discharge circuit and the second discharge circuit keep current injected into the first plate approximately equal to current extracted from the second plate.
16. The memory device of claim 14 , wherein the erase operation of the memory cell is performed using Fowler-Nordheim tunneling.
17. The memory device of claim 14 , wherein the capacitor is a gate-bulk capacitor and the first plate represents a common gate node of the memory cell and the second plate represents a bulk-source node of the memory cell.
18. The memory device of claim 17 , wherein the memory device is a flash memory device.
19. A memory device discharge method, comprising:
initiating a discharge of a memory cell after an erase operation including discharging a first plate of a capacitor through a first discharge circuit and discharging a second plate of the capacitor through a second discharge circuit different than the first discharge circuit, wherein the first plate represents a common gate node of the memory cell and the second plate represents a bulk-source node of the memory cell versus ground; and
coupling the common gate node and the bulk-source node to ground to provide for a further discharge.
20. The method of claim 19 , wherein initiating a discharge of a memory cell comprises injecting a current into the first plate of the capacitor that is approximately equal to a current extracted from the second plate of the capacitor.
21. The method of claim 19 , wherein initiating a discharge of a memory cell comprises implementing the erase operation using Fowler-Nordheim tunneling.
22. The method of claim 19 , comprising providing a flash memory device that includes at least one memory cell.