SPACERS FOR WAFER BONDING
A deformable spacer for wafer bonding applications is disclosed. The spacer may be used to keep wafers separated until desired conditions are achieved.
1 . A wafer bonding process comprising:
placing a spacer between a first and second wafer to separate a first bonding surface of the first wafer from a second bonding surface of the second wafer;
aligning the first wafer above the second wafer;
transporting the wafer stack to a bonding chamber;
applying a physical stimulus to cause the spacer to change its state, thereby allowing the first bonding surface to contact the second bonding surface; and
causing the first bonding surface to bond with the second bonding surface.
2 . The wafer bonding process according to claim 1 further comprising clamping the first wafer, second wafer and spacer together in a jig.
3 . The wafer bonding process according to claim 1 further comprising modifying the atmospheric conditions in the bonding chamber prior to applying the physical stimulus.
4 . The wafer bonding process according to claim 1 further comprising applying a force to a central portion of the first wafer or second wafer to establish a friction force between the first bonding surface and the second bonding surface.
5 . The wafer bonding process according to claim 1 further comprising applying a force to the first wafer or second wafer to bond the first bonding surface to the second bonding surface.
6 . The wafer bonding process according to claim 1 wherein bonding the first bonding surface to the second bonding surface comprises anodic bonding, thermocompression bonding, direct silicon bonding or eutectic bonding.
7 . The wafer bonding process according to claim 1 wherein placing the spacers between the first and second wafer is automated.
8 . The wafer bonding process according to claim 1 wherein placing the spacers between the first and second wafer includes an electroplating process.
9 . A wafer stack comprising:
a first wafer;
a second wafer; and
a spacer adapted to separate a first bonding surface of the first wafer and a second bonding surface of a second wafer,
wherein the spacer is further adapted to change its state in response to a physical stimulus such that the first bonding surface contacts the second bonding surface.
10 . The wafer stack of claim 9 wherein the physical stimulus is a change in ambient temperature.
11 . The wafer stack of claim 9 wherein the physical stimulus is a change in pressure on the spacer.
12 . The wafer stack of claim 9 wherein the spacer comprises an alloy.
13 . The wafer stack of claim 12 wherein the alloy is InSn.
14 . The wafer stack of claim 12 wherein the alloy is AgSn.
15 . The wafer stack of claim 9 wherein the spacer comprises a polymer.
16 . The wafer stack of claim 9 wherein the spacer comprises a glass.
17 . The wafer stack of claim 9 wherein the spacer comprises a spring.
18 . The wafer stack of claim 9 wherein the spacer comprises a material that sublimates.
19 . The wafer stack of claim 9 wherein the first and second bonding surfaces are sealing rings.
20 . The wafer stack of claim 19 wherein the sealing rings comprise a eutectic alloy.
21 . The wafer stack of claim 19 wherein a first sealing ring is Au and a second sealing ring is Sn.
22 . The wafer stack of claim 9 wherein at least one of the first or second wafers comprises a semiconductor.
23 . A method of bonding wafers comprising:
placing a spacer between a first wafer and a second wafer, wherein the spacer separates a first bonding surface of the first wafer from a second bonding surface of the second wafer;
applying a first physical stimulus to cause the spacer to change its state, allowing the first bonding surface to contact the second bonding surface; and
bonding the first bonding surface to the second bonding surface.
24 . A method of bonding wafers according to claim 23 wherein a cavity is created between the first and second wafers when the first bonding surface contacts the second bonding surface.
25 . A method of bonding wafers according to claim 24 wherein the atmosphere inside of the cavity comprises a vacuum.
26 . A method of bonding wafers according to claim 24 wherein the atmosphere inside of the cavity comprises a gas.
27 . A method of bonding wafers according to claim 23 wherein the bonding is performed in a vacuum.
28 . A method of bonding wafers according to claim 23 wherein the first physical stimulus comprises an increase in temperature.
29 . A method of bonding wafers according to claim 28 wherein the change in state of the spacer comprises melting of the spacer.
30 . A method of bonding wafers according to claim 28 wherein the change in state of the spacer comprises sublimation of the spacer.
31 . A method of bonding wafers according to claim 23 wherein the first physical stimulus comprises an increase in pressure.
32 . A method of bonding wafers according to claim 31 wherein the change in state of the spacer comprises plastic deformation of the spacer.
33 . A method of bonding wafers according to claim 31 wherein the change in state of the spacer comprises compression of the spacer.
34 . A method of bonding wafers according to claim 23 further comprising clamping the first and second wafer.
35 . A method of bonding wafers according to claim 23 further comprising applying a second physical stimulus prior to applying the first physical stimulus, wherein the second physical stimulus causes the spacer to change its state, allowing the wafers to remain fixed in place.
36 . A method of bonding wafers according to claim 23 further comprising:
placing a second spacer between a first wafer and a second wafer; and
applying a second physical stimulus to cause the second spacer to change its state, allowing the wafers to remain fixed in place.
37 . A method of bonding wafers comprising:
placing a plurality of wafers in a stack;
placing spacers between each pair of wafers in the stack, wherein each spacer separates a first bonding surface of a first wafer in each pair of wafers from a second bonding surface of an adjacent wafer in the pair;
placing the wafer stack in a bonding chamber;
applying a physical stimulus to cause the spacers to change their state, allowing the first bonding surface of the first wafer in each pair to contact the second bonding surface of the adjacent wafer in each pair; and
bonding the first bonding surface of the first wafer in each pair to the second bonding surface of the adjacent wafer in each pair.