Semiconductor component and method of manufacturing

1. A semiconductor component comprising:

a semiconductor layer of a first conductivity type having a first charge density, a first surface formed with first and second trenches, and a channel region formed adjacent the first trench;

a control electrode in the first trench;

an electrically insulative layer in the first trench between the semiconductor layer and the control electrode;

a first region having a second conductivity type and a second charge density balancing the first charge density to form a superjunction structure, and having a first portion at a first side of the first trench and adjoining a sidewall of the second trench; and

a semiconductor substrate disposed adjacent to the semiconductor layer, wherein the semiconductor substrate has the first conductivity type and a charge density greater than the first and second charge densities, and wherein the first region extends along a height of the semiconductor layer from the semiconductor substrate toward the first surface, and wherein the first region is contiguous with a surface of the semiconductor substrate.

2. The semiconductor component of claim 1 wherein the channel region circumscribes the first trench.

3. The semiconductor component of claim 1 wherein an upper surface of the control electrode terminates within the first trench and is below the first surface.

4. The semiconductor component of claim 1 , wherein the first region has a charge density in a range from about 5.0×10 12 to about 1.0×10 17 atoms per centimeter cubed.

5. The semiconductor component of claim 1 wherein the semiconductor layer has a first volume, and wherein the first region has a second volume different than the first volume.

6. The semiconductor component of claim 1 , wherein the semiconductor layer comprises silicon and germanium.

7. The semiconductor component of claim 1 further comprising an insulating film formed within the second trench.

8. The semiconductor component of claim 1 , wherein the first region is disposed between the channel region and a drain region.

9. The semiconductor component of claim 8 further comprising a source region of the first conductivity type disposed in the channel region between the first and second trenches.

10. The semiconductor component of claim 9 , wherein the source region completely encircles the control electrode.

11. The semiconductor component of claim 9 , wherein the source region is spaced apart from the second trench.

12. The semiconductor component of claim 9 further comprising an electrically conductive layer making contact to the source region at he first surface and within the second trench.

13. The semiconductor component of claim 9 wherein the source region is spaced apart from the first trench.

14. The semiconductor component of claim 13 wherein the control electrode overlies a portion of the first surface.

15. The semiconductor component of claim 1 further comprising:

a source region in the channel region, wherein the second trench has a sidewall contiguous with the channel region and the source region; and

an electrical contact coupled to the channel region and the source region along a portion of the sidewall of the second trench.

16. The semiconductor component of claim 15 , wherein the electrical contact further overlies the control electrode and is insulated therefrom.

17. A semiconductor component comprising:

a semiconductor layer of a first conductivity type having a first charge density, a first surface formed with first and second trenches, and a channel region formed adjacent the first trench;

a control electrode in the first trench;

an electrically insulative layer in the first trench between the semiconductor layer and the control electrode;

a first region having a second conductivity type and a second charge density balancing the first charge density to form a superjunction structure, and having a first portion at a first side of the first trench and adjoining a sidewall of the second trench;

a drain region disposed adjacent to the first trench and the first region, wherein the drain region has the first conductivity type and a charge density greater than the first and second charge densities, and wherein the first region is disposed between the channel region and the drain region, and wherein the first region extends along a height of the semiconductor layer from the drain region toward the first surface;

a source region of the first conductivity type disposed in the channel region between the first and second trenches; and

an electrically conductive layer making contact to the source region at the first surface and within the second trench.

18. The semiconductor component of claim 17 wherein the control electrode overlies a portion of the first surface.

19. A semiconductor component comprising:

a semiconductor layer of a first conductivity type having a first charge density, a first surface formed with first and second trenches, and a channel region formed adjacent the first trench;

a control electrode in the first trench;

an electrically insulative layer in the first trench between the semiconductor layer and the control electrode;

a first region having a second conductivity type and a second charge density balancing the first charge density to form a superjunction structure, and having a first portion at a first side of the first trench and adjoining a sidewall of the second trench;

a drain region disposed adjacent to the first trench and the first region, wherein the drain region has the first conductivity type and a charge density greater than the first and second charge densities;

a source region in the channel region, wherein the second trench has a sidewall contiguous with the channel region and the source region; and

an electrical contact coupled to the channel region and the source region along a portion of the sidewall of the second trench.

20. The semiconductor component of claim 19 , wherein the electrical contact further overlies the control electrode and is insulated therefrom.