Low-capacitance input/output and electrostatic discharge circuit for protecting an integrated circuit from electrostatic discharge
View Patent ↗A transistor formed on a semiconductor substrate of a first conductivity type in a well formed in the substrate and doped with the first conductivity type to an impurity level higher than that of the substrate. A drain doped to a second conductivity type opposite to said first conductivity type is disposed in the well. A pair of opposed source regions doped to the second conductivity type are disposed in the well and are electrically coupled together. They are separated from opposing outer edges of the drain region by channels. A pair of gates are electrically coupled together and disposed above and insulated from the channels. A region of the well disposed below the drain is doped so as to reduce capacitive coupling between the drain and the well.
1. A method for forming a transistor comprising:
forming an n-well in a p-type substrate, the n-well including a selected central region having an effective net concentration of n-type dopant less than the concentration of n-type dopant in the remainder of the n-well;
forming a p-type drain region in the selected central region of the n-well, the p-type drain region being more heavily doped at a center portion thereof and more lightly doped at a peripheral region thereof;
forming first and second p-type source regions spaced apart from opposite edges of the p-type drain region at distances sufficient to form a first channel between the p-type drain region and the first p-type source region and a second channel between the p-type drain region and the second p-type source region, each of the first and second p-type source regions being more heavily doped at a center portion thereof and more lightly doped at a peripheral region thereof, and further being electrically connected to one another; and
forming a first gate disposed above and insulated from the first channel and a second gate disposed above and insulated from the second channel, the first and second gates electrically coupled to one another.
2. The method of claim 1 wherein forming the n-well including a selected central region having an effective net concentration of n-type dopant than in the remainder of the n-well comprises:
forming the n-well with a first concentration of n-type dopant; and
counterdoping the n-well with a p-type dopant in the selected central region in an amount chosen to reduce the effective net concentration of n-type dopant in the selected region.
3. The method of claim 1 , wherein forming the p-type drain region includes forming the p-type drain to extend laterally into the n-well beyond an outer boundary of the selected central region of the n-well.
4. The method of claim 3 wherein forming the p-type drain to extend laterally into the n-well beyond the outer boundary of the selected central region of the n-well includes forming the p-type drain to extend beyond the outer boundary of the selected central region of the n-well by a distance substantially equal to the channel length of the transistor.
5. A method for forming a transistor comprising:
forming a p-well in a p-type substrate, the p-well including a selected central region having an effective net concentration of p-type dopant less than the concentration of p-type dopant than in the remainder of the p-well;
forming an n-type drain region in the selected central region of the p-well, the n-type drain region being more heavily doped at a center portion thereof and more lightly doped at a peripheral region thereof;
forming first and second n-type source regions spaced apart from opposite edges of the n-type drain region at distances sufficient to form a first channel between the n-type drain region and the first n-type source region and a second channel between the n-type drain region and the second n-type source region, each of the first and second n-type source regions being more heavily doped at a center portion thereof and more lightly doped at a peripheral region thereof, and further being electrically connected to one another; and
forming a first gate disposed above and insulated from the first channel and a second gate disposed above and insulated from the second channel, the first and second gates electrically coupled to one another.
6. The method of claim 5 wherein forming the p-well including a selected central region having an effective net concentration of p-type dopant than in the remainder of the n-well comprises:
forming the p-well with a first concentration of n-type dopant; and
counterdoping the p-well with a n-type dopant in the selected central region in an amount chosen to reduce the effective net concentration of p-type dopant in the selected region.
7. The method of claim 5 , wherein forming the n-type drain region includes forming the n-type drain to extend laterally into the p-well beyond an outer boundary of the selected central region of the p-well.
8. The method of claim 7 wherein forming the n-type drain to extend laterally into the p-well beyond the outer boundary of the selected central region of the p-well includes forming the n-type drain to extend beyond the outer boundary of the selected central region of the p-well by a distance substantially equal to the channel length of the transistor.