High impedance, high parallelism, high temperature memory test system architecture
View Patent ↗An electronic device for use with a probe head in automated test equipment. The device includes a plurality of semiconductor devices arranged to provide at least one driver/receiver pair where the driver portion of the driver/receiver pair is configured to transmit a signal to at least one device under test and the receiver portion of the driver/receiver pair is configured to receive a signal from the at least one device under test. Each of the plurality of semiconductor devices is fabricated using either a silicon-on-insulator (SOI) or metal-on-insulator (MOI) technology and has a thickness less than about 300 μm exclusive of any electrical interconnects. The at least one driver/receiver pair is adapted to mount directly to the probe head.
1. An electronic device for use with automated test equipment, the device comprising:
a probe head;
a plurality of probe contact points extending from a side of the probe head, the plurality of probe contact points extending to a first standoff height (H 1 ) from the side of the probe head;
a plurality of metal-on-insulator (M 0 I) semiconductor devices that is i) connected to the side of the probe head from which the plurality of probe contact points extend and ii) has a second standoff height (H 2 ) from the side of the probe head, wherein the standoff height H 2 is less than the standoff height H 1 , wherein the plurality of MOI semiconductor devices provides at least one driver/receiver pair, wherein a driver portion of each driver/receiver pair is configured to transmit a signal to at least one device under test via a respective one of the plurality of probe contact points, and wherein a receiver portion of each driver/receiver pair is configured to receive a signal from the at least one device under test via the at least one of the plurality of probe contact points.
2. The electronic device of claim 1 wherein the plurality of MOI semiconductor devices comprises a plurality of FET-based switches configured to couple the at least one device under test to either the driver portion or the receiver portion of each driver/receiver pair.
3. The electronic device of claim 1 wherein each of the at least one driver/receiver pair is capable of operating in a temperature range of −40° C. to +150° C.
4. The electronic device of claim 1 wherein each of the at least one driver/receiver pair is operational at a frequency of 100 MHz without a termination resistor to ensure integrity of a signal received from the at least one device under test.
5. The electronic device of claim 1 wherein each receiver portion comprises a comparator.
6. The electronic device of claim 1 wherein the at least one device under test is an electronic memory storage device.
7. The electronic device of claim 1 wherein the plurality of probe contact points is compressible, and wherein the first standoff height (H 1 ) is a compressed standoff height of the plurality of probe contact points.
8. An electronic device for use with automated test equipment, the device comprising:
a probe head;
a plurality of probe contact points extending from a side of the probe head, the plurality of probe contact points extending to a first standoff height (H 1 ) from the side of the probe head;
a plurality of silicon-on-insulator (S 0 I) semiconductor devices that is i) connected to the side of the probe head from which the plurality of probe contact points extend and ii) has a second standoff height (H 2 ) from the side of the probe head, wherein the standoff height H 2 is less than the standoff height H 1 , wherein the plurality of SOI semiconductor devices provides at least one driver/receiver pair, wherein a driver portion of each driver/receiver pair is configured to transmit a signal to at least one device under test via a respective one of the plurality of probe contact points, and wherein a receiver portion of each driver/receiver pair is configured to receive a signal from the at least one device under test via the at least one of the plurality of probe contact points.
9. The electronic device of claim 8 wherein the plurality of MOI semiconductor devices comprises a plurality of FET-based switches configured to couple the at least one device under test to either the driver portion or the receiver portion of each driver/receiver pair.
10. The electronic device of claim 8 wherein each of the at least one driver/receiver pair is capable of operating in a temperature range of −40° C. to +150° C.
11. The electronic device of claim 8 wherein each of the at least one driver/receiver pair is operational at a frequency of 100 MHz without a termination resistor to ensure integrity of a signal received from the at least one device under test.
12. The electronic device of claim 8 wherein each receiver portion comprises a comparator.
13. The electronic device of claim 8 wherein the plurality of probe contact points is compressible, and wherein the first standoff height (H 1 ) is a compressed standoff height of the plurality of probe contact points.